Hollowed-out mask and method for manufacturing LED chip by using same
A technology of LED chip and mask, which is applied in the field of semiconductor light-emitting devices, can solve problems such as poor glue uniformity, abnormal process, and cumbersome process, so as to avoid photolithography defects, improve yield and quality reliability, and simplify process steps Effect
Pending Publication Date: 2020-12-25
JUCAN PHOTOELECTRIC TECH (SUQIAN) CO LTD
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Problems solved by technology
[0004] In the conventional LED chip manufacturing process, photoresist is used to make graphics, and ICP, corrosion, evaporation and other processes are used to transfer graphics. Photolithography cleaning cycle steps); Among them, photolithography defects: such as poor glue uniformity, poor development; unclean cleaning (residual solution or photoresist), corrosion of the metal by the solution, etc. Abnormal process, easy to cause loss of LED chip yield , and cause major hidden dangers to quality
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[0065]According to the structure of the LED chip, the present invention has multiple implementation methods, and three embodiments will be described in detail below.
[0066]Such asPicture 9 As shown, it is the process of the manufacturing method of the front mounted LED chip in the first embodiment, which includes the steps:
[0067]Sa1: Such asPicture 10 As shown, a substrate 2 is provided, an N-type semiconductor layer 31, a light-emitting layer 32, and a P-type semiconductor layer 33 are grown on the substrate, and part of the light-emitting layer 32 and the P-type semiconductor layer 3333 are etched to expose all述N-type semiconductor layer 31.
[0068]A part of the N-type semiconductor layer 31 area required for the N electrode 5 is etched to form a stepped mesa.
[0069]Sa2: Such asPicture 11 As shown, the current blocking layer mask 1a with the patterned area 11 in the shape of the current blocking layer 3 is covered on the LED chip, and insulation is deposited directly on the N-type sem...
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Abstract
The invention provides a hollowed-out mask and a method for manufacturing an LED chip by using the same, the hollowed-out mask is provided with a hollowed-out pattern area penetrating through the upper surface and the lower surface of the hollowed-out mask, and the shape of the pattern area is at least the pattern shape of one of a current blocking layer, a transparent conductive layer, an electrode, a protective layer, a Bragg reflection layer and a connecting electrode of the LED chip. By forming the pattern areas of the patterns of each layer of the hollowed-out LED on the hollowed-out maskand applying the pattern areas to the manufacturing process of the LED chip, each layer of the LED chip can be directly deposited or etched on the LED through the hollowed-out mask, so that a plurality of steps of photoresist coating, exposure and development, pattern transfer, cleaning and photoresist removal and the like in the conventional process are omitted. Therefore, the abnormal problemsof photoetching defects, incomplete cleaning, metal corrosion and the like which are easy to occur in the conventional process flow are avoided, and the yield and the quality reliability of the LED chip are improved while the process flow steps are simplified.
Description
Technical field[0001]The present invention relates to the field of semiconductor light-emitting devices, in particular to a hollow mask and a method for manufacturing LED chips using the hollow mask.Background technique[0002]Light Emitting Diode (English: Light Emitting Diode, abbreviation: LED), as a new energy-saving and environmentally friendly solid-state lighting source, has the advantages of high energy efficiency, small size, light weight, fast response speed and long life span, making it gain in many fields widely used.[0003]Now in the LED chip manufacturing process, photoresist is usually used to make patterns on the surface of GAN. After ICP, etching, evaporation and other schemes are used for pattern transfer, then after de-resist cleaning, the photoresist on the surface of GAN is removed; Repeated operations to make various layers of graphics on the GAN surface, and form the final chip graphics;[0004]In the conventional LED chip manufacturing process, photoresist is used...
Claims
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IPC IPC(8): H01L33/00H01L33/38C23C14/04C23C14/18C23C14/24
CPCC23C14/042C23C14/18C23C14/24H01L33/005H01L33/38H01L2933/0016
Inventor 不公告发明人
Owner JUCAN PHOTOELECTRIC TECH (SUQIAN) CO LTD