Microchip capacitor and manufacturing method thereof

A technology of chip capacitors and manufacturing methods, applied in capacitors, circuits, electrical components, etc., can solve the problems of difficult processing and assembly processes of micro-sized capacitors, and overcome the difficulty of controlling processing and assembly accuracy, short production cycle, and production costs. low effect

Pending Publication Date: 2020-12-29
SHANGHAI SPACEFLIGHT ELECTRONICS & COMM EQUIP RES INST
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Chip capacitors are generally manufactured by thin-film circuit technology. The processing technology of conventional-sized ch

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  • Microchip capacitor and manufacturing method thereof
  • Microchip capacitor and manufacturing method thereof
  • Microchip capacitor and manufacturing method thereof

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[0035]The present invention will be described in detail below in conjunction with specific embodiments. The following examples will help those skilled in the art to further understand the present invention, but do not limit the present invention in any form. It should be pointed out that for those of ordinary skill in the art, several changes and improvements can be made without departing from the concept of the present invention. These all belong to the protection scope of the present invention.

[0036]Such asfigure 1 This embodiment discloses a microchip capacitor, including: a prefabricated solder tin layer 203, a prefabricated solder gold layer 201, a barrier layer 101, an aluminum silicon alloy substrate 010, an adhesive layer 102, a conductive layer 202, and a dielectric Layer 104, electrode layer 105.

[0037]Wherein, the aluminum-silicon alloy substrate 010 is an aluminum-silicon alloy material with a thickness of 0.2-0.5mm, and the mass fraction of silicon Si (that is, the perce...

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Abstract

The invention discloses a microchip capacitor and a manufacturing method thereof. The chip capacitor comprises a prefabricated solder tin layer, a prefabricated solder gold layer, a barrier layer, analuminum-silicon alloy substrate, a bonding layer, a conductive layer, a dielectric layer and an electrode layer which are stacked in sequence. The manufacturing method comprises the following steps:S1, providing an aluminum-silicon alloy substrate and carrying out pretreatment; S2, preparing a barrier layer on the first surface of the aluminum-silicon alloy substrate, and preparing a bonding layer on the second surface of the aluminum-silicon alloy substrate; S3, plating gold on the barrier layer to form a prefabricated solder gold layer, and plating a conductive layer on the bonding layer;S4, sputtering a dielectric layer and an electrode layer on the conductive layer; S5, forming a prefabricated solder tin layer on the prefabricated solder gold layer through tin electro-deposition; and S6, scribing to obtain the independent microchip capacitor. According to the invention, the aluminum-silicon alloy is used as the substrate, the substrate does not need to be polished or sputtered with a priming coat, the capacitor area is large, the manufacturing period is short, and the assembling difficulty of the microchip capacitor is reduced.

Description

technical field [0001] The invention relates to the packaging field of aluminum-silicon microwave components, in particular to a microchip capacitor and a manufacturing method thereof. Background technique [0002] With the continuous development of high frequency and miniaturization of electronic products, the requirements for components are getting higher and higher. As a common passive device in electronic circuits, capacitors have developed various device forms suitable for different occasions. In the microwave field, capacitors are mainly used for impedance matching, coupling DC blocking, bypass decoupling, etc. Compared with other forms of capacitors, chip capacitors have the following characteristics: ① high strength, high temperature resistance; ② MIM capacitor structure is simple, stable and reliable performance; ③ gold as the surface metal electrode, suitable for micro-assembly process; ④ low temperature change rate, low loss and high Q. Therefore, chip capacito...

Claims

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Application Information

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IPC IPC(8): H01L23/64
CPCH01L28/40H01L28/60
Inventor 刘凯丁蕾叶雯燚陈靖任卫朋王立春
Owner SHANGHAI SPACEFLIGHT ELECTRONICS & COMM EQUIP RES INST
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