GaN optical sensing biosensing chip and preparation method and application thereof
A bio-sensing and light-sensing technology, applied in the field of GaN light-sensing bio-sensing chips and their preparation, can solve the problems of decreased luminescence performance, poor waterproof performance, etc., and achieve excellent biocompatibility, waterproof performance and, The effect of excellent waterproof performance
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment 1
[0048] A GaN light-sensing biosensing chip as an embodiment of the present invention includes an LED array and a PD array, the LED array includes 10×10 microcolumnar LED structures connected in series, and the PD array includes 10×10 series connected The micro-columnar LED structure of the LED array, the LED array is connected to an external power supply; the micro-columnar LED structures of the LED array and the PD array sequentially include an ultraviolet photosensitive resin layer, a GaN LED epitaxial layer and a liquid crystal polymer (LCP) substrate; the said GaN LED epitaxial layer includes p-GaN layer, In x Ga 1-x N / GaN multi-dimensional quantum well, n-GaN layer, the p-GaN layer is in contact with the ultraviolet photosensitive resin layer, the n-GaN layer is in contact with the liquid crystal polymer substrate, and the GaN LED epitaxial layer Part of the n-GaN layer in the GaN LED is exposed, and the exposed n-GaN layer is contacted and connected with an n ohm contac...
Embodiment 2
[0063] A GaN light-sensing biosensing chip as an embodiment of the present invention includes a microcolumnar LED structure, the PD array includes several microcolumnar LED structures connected in series, and the LED array is connected to an external power supply; the LED array Each microcolumnar LED structure of the PD array includes an ultraviolet photosensitive resin layer, a GaN LED epitaxial layer, and a liquid crystal polymer (LCP) substrate in sequence; the GaN LED epitaxial layer includes a p-GaN layer, an In x Ga 1-x N / GaN multi-dimensional quantum well, n-GaN layer, the p-GaN layer is in contact with the ultraviolet photosensitive resin layer, the n-GaN layer is in contact with the liquid crystal polymer substrate, and the GaN LED epitaxial layer Part of the n-GaN layer in the GaN LED is exposed, and the exposed n-GaN layer is contacted and connected with an n ohm contact pad. Part of the p-GaN layer in the epitaxial layer of the GaN LED is exposed, and the exposed p...
PUM
Property | Measurement | Unit |
---|---|---|
Center wavelength | aaaaa | aaaaa |
Thickness | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com