Method for improving adhesive force of metal film circuit on silicon wafer

A metal thin film, silicon wafer technology, applied in circuits, electrical components, waveguide-type devices, etc., can solve the problems of circuit film layer peeling, low efficiency, affecting the ability of mass production of devices, etc. The effect of shortening process time, meeting the requirements of device reliability and production efficiency

Active Publication Date: 2021-01-15
中国电子科技集团公司第九研究所
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, according to the analysis of the actual situation, it is found that the heating during sputtering cannot fully and effectively improve the adhesion of the metal thin film circuit on silicon, and the phenomenon of circuit film layer peeling often occurs, wh

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] In this embodiment, the fabrication of a chrome / gold metal thin film circuit on a silicon wafer is taken as an example.

[0029] A method for improving the adhesion of a metal thin film circuit on a silicon wafer, comprising the following steps:

[0030] (1) Using the DC normal temperature magnetron sputtering process, the sputtering power is 120W, the sputtering pressure is 0.5Pa, and a layer of 50nm chromium metal film is sputtered on the cleaned silicon wafer;

[0031] (2) On the chromium layer metal film, the sputtering power is 180W, the sputtering pressure is 1Pa, and a layer of 300nm thick gold film seed layer is continued to be sputtered by direct current and normal temperature;

[0032] (3) The silicon wafer is uniformly glued, exposed, and developed, and after the development, the wet etching of gold is performed, and after the etching is completed, the wet etching of chromium is performed. After the corrosion is completed, remove the glue;

[0033] (4) Thic...

Embodiment 2

[0044] In this embodiment, the fabrication of a chrome / copper / gold metal thin film circuit on a silicon wafer is taken as an example.

[0045] A method for improving the adhesion of a metal thin film circuit on a silicon wafer, comprising the following steps:

[0046] (1) Using DC normal temperature magnetron sputtering process, sputtering power 80W, sputtering pressure 0.2Pa, sputter a layer of 30nm chromium metal film on the cleaned silicon wafer;

[0047] (2) On the chromium layer metal film, the sputtering power is 120W, the sputtering pressure is 0.5Pa, and a layer of 250nm thick copper film seed layer is continued to be sputtered by direct current and normal temperature;

[0048] (3) The silicon wafer is uniformly glued, exposed, and developed. After the development, copper spray etching is performed, and after the etching is completed, the chromium wet etching is performed. After the corrosion is completed, remove the glue;

[0049] (4) Thicken the metal film circuit ...

Embodiment 3

[0057] In this embodiment, the fabrication of a chrome / gold metal thin film circuit on a silicon wafer is taken as an example.

[0058] A method for improving the adhesion of a metal thin film circuit on a silicon wafer, comprising the following steps:

[0059] (1) Using DC normal temperature magnetron sputtering process, sputtering power 150W, sputtering pressure 0.5Pa, sputter a layer of 30nm chromium metal film on the cleaned silicon wafer;

[0060] (2) On the chromium layer metal film, the sputtering power is 180W, the sputtering pressure is 1Pa, and a layer of 200nm thick gold film seed layer is continued to be sputtered by direct current and normal temperature;

[0061] (3) The silicon wafer is uniformly glued, exposed, and developed, and after the development, the wet etching of gold is performed, and after the etching is completed, the wet etching of chromium is performed. After the corrosion is completed, remove the glue;

[0062] (4) Thicken the metal film circuit ...

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Abstract

The invention discloses a method for improving adhesive force of a metal film circuit on a silicon wafer, which belongs to the technical field of microwave integrated circuit micromachining. The method comprises the following steps of: growing a metal film on the silicon wafer by adopting normal-temperature direct-current magnetron sputtering, completing the patterning of the metal film circuit, then putting the silicon wafer into a high-temperature and high-pressure atmosphere furnace, carrying out heat preservation and pressure maintaining treatment for a certain period of time, and then cooling and taking out the silicon wafer. Compared with the prior art, the method provided by the invention has the advantages that the adhesive force of a metal film circuit film layer is remarkably improved, the overall process time is shortened by more than a half by a normal-temperature magnetron sputtering process, and the requirements of silicon-based cavity circulator device production on device reliability and production efficiency are met.

Description

technical field [0001] The invention relates to the technical field of microwave integrated circuit micro-processing, in particular to a method for improving the adhesion of metal thin film circuits on silicon wafers. Background technique [0002] Microwave ferrite circulator / isolator is an indispensable key component of various radar systems. It is mainly used to solve a series of problems such as isolation between microwave systems, impedance matching, and antenna transceiver sharing, which can greatly improve the tactics of radar systems. performance. [0003] At present, the MEMS manufacturing process is used to nest ferrites into silicon wafers, and then fabricate microstrip metal thin film circuits on the silicon wafers. one. MEMS silicon-based cavity circulators have the advantages of good device performance, small size, and mass production. Among them, the adhesion of the metal thin film circuit on the silicon wafer is very important, which is related to the relia...

Claims

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Application Information

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IPC IPC(8): H01L21/70H01P11/00H01P1/36H01P1/38
CPCH01L21/707H01P1/36H01P1/38H01P11/00
Inventor 林亚宁赖金明周俊倪经陈学平李林玲吴燕辉徐德超王倩冯旭文
Owner 中国电子科技集团公司第九研究所
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