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A kind of crystalline silicon solar cell with high-efficiency back passivation layer and preparation method thereof

A solar cell and passivation layer technology, which is applied in the field of solar cells, can solve problems such as unfavorable short-circuit current density of solar cells, unfavorable utilization of long-wave batteries, and general long-wave reflection effect, so as to improve photoelectric conversion capability and reduce interface defect recombination rate , Improving the effect of electron directional transmission ability

Active Publication Date: 2022-04-29
TONGWEI SOLAR ENERGY (CHENGDU) CO LID
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  • Summary
  • Abstract
  • Description
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  • Application Information

AI Technical Summary

Problems solved by technology

Among them, the chemical passivation is mainly because the aluminum oxide prepared under different conditions has different hydrogen content, and the hydrogen combines with the internal defects of the silicon wafer and the dangling bonds at the grain boundaries, thereby reducing the recombination center, but the preparation rate of the aluminum oxide passivation layer is usually very fast. Slow, increases cost, and its long-wave reflection effect is average, which is not conducive to the utilization of long-wave by the battery, and is not conducive to improving the short-circuit current density of solar cells

Method used

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  • A kind of crystalline silicon solar cell with high-efficiency back passivation layer and preparation method thereof
  • A kind of crystalline silicon solar cell with high-efficiency back passivation layer and preparation method thereof

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034] See Figure 2 , a crystalline silicon solar cell with high efficiency back passivation layer comprises p-type silicon 1. The backlight surface of p-type silicon 1 is successively provided with SiOx passivation layer 2, AlOx: H passivation layer 4, SixNy: H anti passivation layer 5 and SiOx anti passivation layer 6 from top to bottom.

[0035] The x value in SiOx passivation layer 2 ranges from 1 and the refractive index is 1.6.

[0036] The thickness of the passivation layer is 10nm.

[0037] The thickness of SixNy: H anti passivation layer 5 is 40 nm.

[0038] The thickness of SiOx anti passivation layer 6 is 55 nm.

[0039] The x value in SiOx anti passivation layer 6 ranges from 1 and the refractive index is 1.4.

[0040] The invention relates to a preparation method of crystalline silicon solar cell with high efficiency back passivation layer, which comprises the following steps:

[0041] 1) Firstly, SiO was prepared on crystalline silicon solar cells by sol gel method o...

Embodiment 2

[0048] See Figure 2 , a crystalline silicon solar cell with high efficiency back passivation layer comprises p-type silicon 1. The backlight surface of p-type silicon 1 is successively provided with SiOx passivation layer 2, AlOx: H passivation layer 4, SixNy: H anti passivation layer 5 and SiOx anti passivation layer 6 from top to bottom.

[0049] The x value in SiOx passivation layer 2 ranges from 2 and the refractive index is 1.7.

[0050] The thickness of AlOx: H passivation layer 4 is 32 nm.

[0051] The thickness of SixNy: H anti passivation layer 5 is 123nm.

[0052] The thickness of SiOx anti passivation layer 6 is 82 nm.

[0053] The x value in SiOx anti passivation layer 6 ranges from 2 and the refractive index is 1.6.

[0054] The invention relates to a preparation method of crystalline silicon solar cell with high efficiency back passivation layer, which comprises the following steps:

[0055] 1) Firstly, SiO was prepared on crystalline silicon solar cells by sol gel m...

Embodiment 3

[0062] See Figure 2 , a crystalline silicon solar cell with high efficiency back passivation layer comprises p-type silicon 1. The backlight surface of p-type silicon 1 is successively provided with SiOx passivation layer 2, AlOx: H passivation layer 4, SixNy: H anti passivation layer 5 and SiOx anti passivation layer 6 from top to bottom.

[0063] The x value in SiOx passivation layer 2 ranges from 1 and the refractive index is 1.7.

[0064] The thickness of AlOx: H passivation layer 4 is 48 nm.

[0065] The thickness of SixNy: H anti passivation layer 5 is 62 nm.

[0066] The thickness of SiOx anti passivation layer 6 is 133 nm.

[0067] The x value in SiOx anti passivation layer 6 ranges from 2 and the refractive index is 1.4.

[0068] The invention relates to a preparation method of crystalline silicon solar cell with high efficiency back passivation layer, which comprises the following steps:

[0069] 1) Firstly, SiO was prepared on crystalline silicon solar cells by sol gel ...

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Abstract

The invention belongs to the field of solar cells, and is used to strengthen the reflection effect of P-type silicon on long waves and improve the short-circuit current density of solar cells, and specifically relates to a crystalline silicon solar cell with a high-efficiency back passivation layer and a preparation method thereof, including P-type Silicon, the backlight surface of P-type silicon is provided with SiOx passivation layer, TiOx anti-reflection passivation layer, AlOx: H passivation layer, SixNy: H anti-reflection passivation layer, SiOx anti-reflection passivation layer from top to bottom; The invention solves the problem that the aluminum oxide passivation layer on the silicon chip of the existing PERC solar cell has a general reflection effect on the long-wave solar light, which is not conducive to the utilization of the long-wave solar light by the battery, and is also not conducive to improving the short-circuit current density of the solar cell.

Description

technical field [0001] The invention belongs to the field of solar cells, which is used to strengthen the reflection effect of p-type silicon on solar light long wave and improve the short-circuit current density of solar cells, in particular to a crystalline silicon solar cell with high-efficiency back passivation layer with anti reflection function and a preparation method thereof. Background technology [0002] Solar cells are photovoltaic cells, which are semiconductor devices that can directly use sunlight to generate electricity. Because they are green and belong to renewable energy, they have attracted extensive attention. As a clean and efficient energy technology, photovoltaic power generation has gradually promoted its strategic position in China's energy structure in recent years. Solar cell is a promising way to provide energy. Crystalline silicon solar cell is the solar cell with the highest market share at present. [0003] Perc technology is the back contact of the...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/068H01L31/0216H01L31/056H01L31/18
CPCH01L31/068H01L31/02167H01L31/02168H01L31/056H01L31/1804H01L31/1868Y02E10/52Y02E10/547Y02P70/50
Inventor 陈坤王文武谢毅李卫苏荣张静全李书森
Owner TONGWEI SOLAR ENERGY (CHENGDU) CO LID
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