Composite material, preparation method thereof and quantum dot light-emitting diode

A composite material and initiator technology, applied in the direction of organic semiconductor device materials, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problems of reducing the performance and stability of QLED devices, and achieve improved stability, improved performance indicators, The effect of preventing agglomeration

Inactive Publication Date: 2021-01-29
TCL CORPORATION
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In view of the above-mentioned deficiencies in the prior art, the object of the present invention is to provide a composite material and its preparation method and quantum dot light-emitting diodes, aiming to solve the problem that there are a large number of hydroxyl groups, carboxyl groups, etc. on the surface of ZnO particles prepared by the prior art, which are easy to cause agglomeration groups, and more surface defects, thereby reducing the performance and stability of QLED devices

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  • Composite material, preparation method thereof and quantum dot light-emitting diode
  • Composite material, preparation method thereof and quantum dot light-emitting diode
  • Composite material, preparation method thereof and quantum dot light-emitting diode

Examples

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Effect test

Embodiment 1

[0062] 1. The preparation steps of composite materials are as follows:

[0063]To a volume of 20ml, a concentration of 30mg / ml of the ZnO ethanol solution, respectively add 20ml of N-vinylpyrrolidone o-dichlorobenzene solution (volume ratio of 1:4) and 2.5mg of AIBN, then at 80 ° C, under an inert gas atmosphere Reaction 36h, obtain product;

[0064] After the reaction was completed, it was naturally cooled to room temperature, and the product was repeatedly dissolved and precipitated by ethanol and ether, and finally vacuum-dried to obtain a composite material.

[0065] 2. The steps for preparing QLED devices are as follows:

[0066] A bottom electrode, a hole injection layer, a hole transport layer, a quantum dot light-emitting layer, an electron transport layer, and a top electrode are sequentially prepared on the substrate. Wherein, the substrate is a glass substrate; the bottom electrode is ITO with a thickness of 120nm; the hole injection layer is PEDOT:PSS with a thic...

Embodiment 2

[0068] 1. The steps of composite materials are as follows:

[0069] Add 20ml of N-vinylpyrrolidone in o-dichlorobenzene solution (1:10 by volume) and 2.5mg of mercaptobenzothiazole to the ethanol solution of ZnO with a concentration of 30mg / ml in a volume of 20ml, and then at 100°C, inert Under the gas atmosphere, react for 24h to obtain the product;

[0070] After the reaction was completed, it was naturally cooled to room temperature, and the product was repeatedly dissolved and precipitated by ethanol and ether, and finally vacuum-dried to obtain a composite material.

[0071] 2. The steps for preparing QLED devices are as follows:

[0072] A bottom electrode, a hole injection layer, a hole transport layer, a quantum dot light-emitting layer, an electron transport layer, and a top electrode are sequentially prepared on the substrate. Wherein, the substrate is a glass substrate; the bottom electrode is ITO with a thickness of 120nm; the hole injection layer is PEDOT:PSS wi...

Embodiment 3

[0074] 1. The preparation steps of composite materials are as follows:

[0075] Be 20ml to volume, concentration is the o-dichlorobenzene solution (volume ratio is 1:5) of 10mlN-vinylpyrrolidone and 2.5mg methyl ethyl ketone peroxide in the ethanolic solution of ZnO that concentration is 60mg / ml, then at 150 °C, reacted for 36h under an inert gas atmosphere to obtain the product;

[0076] (2) After the reaction is finished, it is naturally cooled to room temperature, and the product is repeatedly dissolved and precipitated by ethanol and ether, and finally vacuum-dried to obtain a composite material.

[0077] 2. The steps for preparing QLED devices are as follows:

[0078] A bottom electrode, a hole injection layer, a hole transport layer, a quantum dot light-emitting layer, an electron transport layer, and a top electrode are sequentially prepared on the substrate. Wherein, the substrate is a glass substrate; the bottom electrode is ITO with a thickness of 120nm; the hole i...

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Abstract

The invention discloses a composite material, a preparation method thereof and a quantum dot light-emitting diode, wherein the preparation method comprises the following steps of: dispersing zinc oxide particles in a first polar solvent to prepare a zinc oxide solution; and under an inert atmosphere, adding an N-vinylpyrrolidone solution and an initiator into the zinc oxide solution, and carryingout heating treatment to coat the surfaces of the zinc oxide particles with polyvinylpyrrolidone generated by the reaction, thereby obtaining the composite material. According to the invention, the zinc oxide particles are isolated in the PVP grids to realize coating of the zinc oxide particles, and the isolation of the PVP grids can effectively cover dangling bonds like hydroxyl, carboxyl and thelike on the surfaces of the zinc oxide particles, so that the sensitivity of zinc oxide to water and oxygen in air is improved, and the stability of a zinc oxide film and a QLED device is improved; the isolation of the PVP grids can also isolate adjacent zinc oxide particles, so that the zinc oxide particles are prevented from being agglomerated, and the film forming uniformity is ensured.

Description

technical field [0001] The invention relates to the field of quantum dot light-emitting diodes, in particular to a composite material, a preparation method thereof and a quantum dot light-emitting diode. Background technique [0002] Quantum dots (semiconductor nanocrystals) are a class of nanomaterials whose particle size is smaller than or close to the exciton Bohr radius. Large, narrow peak width, high luminous efficiency, long life, strong photothermal stability), and excellent solution processability, and are widely used in new display and lighting, solar cells, biomarkers and other fields. Among them, the quantum dot light-emitting diode (QLED) with quantum dots as the light-emitting layer has inherited the excellent photoelectric properties of quantum dot materials, and has the advantages of high resolution, wide color gamut, high color purity and low manufacturing cost. The next-generation new display with the most development potential after OLED. [0003] At pres...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C08F126/10C08F2/44C08K3/22H01L51/50
CPCC08F126/10C08F2/44C08K3/22C08K2003/2296H10K50/16H10K2102/00
Inventor 聂志文刘文勇
Owner TCL CORPORATION
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