Ion beam metallization method of LCP base material and product thereof

A metallization and ion beam technology, applied in the direction of ion implantation plating, metal material coating process, coating, etc., can solve the problem that the plasma deposition layer is difficult to obtain bonding force, impossible to meet the requirements, and lacks high bonding force LCP metal Problems such as chemicalization methods, to achieve the effect of improving compactness and peel strength, strong peel strength, and broad market application prospects

Inactive Publication Date: 2021-01-29
廖斌 +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This technical solution uses plasma deposition for metallization to obtain a plasma deposition layer. It is difficult to obtain a good bonding force for the obtained plasma deposition layer, especially when ...

Method used

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  • Ion beam metallization method of LCP base material and product thereof
  • Ion beam metallization method of LCP base material and product thereof
  • Ion beam metallization method of LCP base material and product thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0044] (1) The surface of the LCP substrate is activated. The surface of the LCP substrate is treated by a Kaufman ion source to form a surface activation layer. The voltage is 15kV, the activation gas is Ar, the current is 600mA, and the activation time is 45s;

[0045] (2) Form a mixed layer, mix high-energy metal ions in the cross-linked layer through a high-energy ion source system to form a metal-nonmetal mixed layer, the mixed metal is Ni, the ion beam energy is 8keV, and the treatment dose is 1*10 15 ions / cm 2 ;

[0046] (3) Ion beam deposition, metal ions are deposited in the transition layer through a low-energy ion source system, the deposited metal is Cu, the deposition voltage is 30V, and the deposition current is 100A. When the low-energy ion beam and the high-energy ion beam are working, the vacuum degree is maintained at 2 MilliPascal, the working voltage of the electron gun is 1000V, and the magnetic field is 100mT.

[0047] The LCP copper-clad laminate was t...

Embodiment 2

[0049] The difference between this embodiment and Embodiment 1 lies in that the processing energy of the Kaufmann ion source in step (1) is different.

[0050] (1) The surface of the LCP substrate is activated. The surface of the LCP substrate is treated by a Kaufmann ion source to form a surface activation layer. The voltage is 10kV, the activation gas is Ar, the current is 600mA, and the activation time is 45s;

[0051] (2) Form a mixed layer, mix high-energy metal ions in the cross-linked layer through a high-energy ion source system to form a metal-nonmetal mixed layer, the mixed metal is Ni, the ion beam energy is 8keV, and the treatment dose is 1*10 15 ions / cm 2 ;

[0052] (3) Ion beam deposition, metal ions are deposited in the transition layer through a low-energy ion source system, the deposited metal is Cu, the deposition voltage is 30V, and the deposition current is 100A. When the low-energy ion beam and the high-energy ion beam are working, the vacuum degree is ma...

Embodiment 3

[0055] The difference between this embodiment and Embodiment 1 lies in that the processing energy of the Kaufmann ion source in step (1) is different.

[0056] (1) The surface of the LCP substrate is activated. The surface of the LCP substrate is treated by a Kaufman ion source to form a surface activation layer. The voltage is 5kV, the activation gas is Ar, the current is 600mA, and the activation time is 45s;

[0057] (2) Form a mixed layer, mix high-energy metal ions in the cross-linked layer through a high-energy ion source system to form a metal-nonmetal mixed layer, the mixed metal is Ni, the ion beam energy is 8keV, and the treatment dose is 1*10 15 ions / cm 2 ;

[0058] (3) Ion beam deposition, metal ions are deposited in the transition layer through a low-energy ion source system, the deposited metal is Cu, the deposition voltage is 30V, and the deposition current is 100A. When the low-energy ion beam and the high-energy ion beam are working, the vacuum degree is main...

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Abstract

The invention discloses an ion beam metallization method of an LCP base material and a product thereof. The method comprises the following steps of: (1) surface pretreatment: cleaning the surface of the LCP base material; (2) preparation of a transition layer: finishing high-energy metal ion treatment through a high-energy ion beam system to form a metal-nonmetal mixed layer; and (3) ion beam deposition: depositing low-energy metal ions through a low-energy ion beam system to obtain a metal layer so as to obtain an LCP base material metal plate. A high-energy ion source and a low-plasma sourcesystem enable beam spots acted on the surface of a sample to be positively charged metal ions with a certain energy, so that the deposition effect is good, the binding force is high, the peeling strength is higher even if the metal layer is thinner, and the market application prospect is broad.

Description

technical field [0001] The invention relates to the field of substrate manufacturing of circuit boards, in particular to an ion beam metallization method of LCP substrates and products thereof. Background technique [0002] Liquid crystal polymer (LCP) is a flexible substrate material with very good formability and a very stable dielectric constant over a wide frequency range. The best choice for the device is a very potential antenna substrate material. Traditional LCP metallization methods are usually physical lamination methods. For example, LCP-based flexible copper-clad laminates are made by directly laminating the liquid crystal polymer and copper foil by controlling the temperature near the thermal deformation temperature of the liquid crystal polymer, and then solidifying after cooling. The latter is formed by bonding liquid crystal polymer and copper foil together. LCP is a kind of strong hydrophobic material. Even if its surface is treated by traditional chemical...

Claims

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Application Information

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IPC IPC(8): C23C14/22C23C14/02C23C14/06C23C14/20G02F1/1333
CPCC23C14/022C23C14/06C23C14/20C23C14/221G02F1/133305
Inventor 廖斌陈琳王国梁罗军庞盼
Owner 廖斌
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