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A niobium oxide gating tube

A niobium gate, magnesium oxide technology, applied in electrical components and other directions, can solve problems such as limited switching ratio, and achieve the effects of improving switching ratio, short production cycle, and stable process

Active Publication Date: 2021-08-20
HUBEI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the on-off ratio of niobium oxide gate tubes is limited (usually <100), which is not enough for cross arrays. In order to further improve the performance of niobium oxide gate tubes, adding new dielectric materials has become the research focus of this technology

Method used

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  • A niobium oxide gating tube
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preparation example Construction

[0031] The structure of the niobium oxide gating tube added with magnesium oxide additional dielectric layer in the present invention is as follows from bottom to top: bottom electrode, lower additional dielectric layer, functional layer, and top electrode; its preparation method includes the following steps:

[0032] Step 1): For platinum bottom electrode (0.16μm 2 ~1mm 2 ) of the silicon substrate is pretreated;

[0033] Step 2): Install magnesium oxide targets, niobium oxide targets, and metal titanium targets on the magnetron sputtering equipment, and pass inert gas argon into the vacuum chamber of the equipment;

[0034] Step 3): Prepare an additional dielectric layer of magnesium oxide: turn on the magnetron sputtering RF power supply, and control the system pressure in the vacuum chamber to 2×10 -1 ~6×10 -1 Pa, the temperature is 290-330K, the power is 30-40W, the sputtering time is 20-30 seconds, after the deposition is completed, turn off the magnetron sputtering r...

Embodiment 1

[0038]This embodiment is a niobium oxide gating tube added with an additional dielectric layer of magnesium oxide, and its structure from bottom to top is: bottom electrode, lower additional dielectric layer, functional layer, top electrode or bottom electrode, functional layer, and lower additional dielectric layer , a top electrode; preferably a bottom electrode, a lower additional dielectric layer, a functional layer, and a top electrode. In the niobium oxide gate tube with a preferred structure, the lower additional dielectric layer is deposited on the bottom electrode prior to the functional layer to ensure the uniformity of the dielectric layer, so as to play a better role. The gating ratio of the gating tube of this preferred structure can be increased to 68. Wherein the bottom electrode is a silicon dioxide substrate plated with metal platinum (gold, tungsten), the shape is rectangular, and the area is 0.64cm 2 ~1cm 2 ; The additional dielectric layer is a magnesium ...

Embodiment 2

[0059] This embodiment 2 is a niobium oxide gating tube with upper and lower magnesium oxide additional dielectric layers, its gating ratio can reach 161, and its structure from bottom to top is: bottom electrode, lower additional dielectric layer, functional layer, upper additional Dielectric layer, top electrode. Wherein the bottom electrode is a silicon dioxide substrate plated with metal platinum (gold, tungsten), the shape is rectangular, and the area is 0.64cm 2 ~1cm 2 ; The lower additional dielectric layer is a magnesium oxide film with a thickness of 1-5nm and a rectangular shape, but its size is slightly smaller than that of the bottom electrode, which is used to reserve the bottom electrode, with an area of ​​0.48cm 2 ~0.8cm 2 The functional layer is a niobium oxide thin film with a thickness of 80-200nm and a rectangular shape with the same area as the lower additional dielectric layer; the upper additional dielectric layer is a magnesium oxide thin film with a t...

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Abstract

The invention provides a niobium oxide gating tube including a magnesium oxide dielectric layer, which belongs to the technical field of memory; the existing gating tube has problems such as crosstalk and low integration. The gating tube of the present invention comprises: a bottom electrode, a magnesium oxide dielectric layer, a niobium oxide functional layer and a top electrode; the gating tube has improved performance, and can bear higher low-resistance state current at the same time, improving the on-state current of the device density, and is compatible with mainstream microelectronics processing techniques.

Description

technical field [0001] The invention relates to the technical field of gating tubes and data storage, in particular to a niobium oxide gating tube including a magnesium oxide dielectric layer. Background technique [0002] With the rapid development of information network technology and the widespread popularization of mobile smart terminals, people's demand for data storage in the era of big data is increasing day by day. Currently, charge-based flash memory (flash) is the most commonly used non-volatile memory device. However, with the continuous advancement of semiconductor technology nodes, flash memory has disadvantages such as slow speed, poor battery life, low density, and is close to the physical limit. Therefore, it is very necessary to explore new technologies. In order to continue the progress of Moore's Law, many new non-volatile storage technologies based on other storage concepts have attracted extensive attention from the scientific and academic circles. At...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L45/00
CPCH10N70/20H10N70/883H10N70/8833H10N70/021
Inventor 杨高琦
Owner HUBEI UNIV
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