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High-reliability thermoelectric device and preparation method

A thermoelectric device and reliability technology, applied in the manufacture/processing of thermoelectric devices, thermoelectric device components, etc., can solve problems such as cracks and affect the performance of thermoelectric materials, and achieve the effect of reducing crack damage and improving reliability.

Active Publication Date: 2021-02-05
ZHENGZHOU UNIV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the process temperature of these methods is generally above 400 °C, which will not only affect the performance of thermoelectric materials, but also thermal stress will cause new crack defects to form at the thermoelectric material / metal interface of the metallization layer.

Method used

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  • High-reliability thermoelectric device and preparation method

Examples

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Effect test

preparation example Construction

[0026] A method for preparing a high-reliability thermoelectric device comprises the following steps:

[0027] (1) First, slice the thermoelectric material device into a thermoelectric chip 3, clean the bonding surface of the thermoelectric chip 3 by using a standard RCA process, and sputter a nickel metal layer 2 on the package connection surface of the thermoelectric chip 3. The nickel The thickness of the metal layer 2 is 1-2 microns, so as to prevent the copper atoms in the copper metal layer 5 of the copper-clad ceramic substrate 6 from diffusing into the thermoelectric material device.

[0028] (2) Corroding the surface of the sputtered nickel metal layer 2 with a dealloying method to prepare a metal nickel layer 1 with a nanopore structure, the thickness of the metal nickel layer 1 with a nanopore structure is 200-500 nanometers, and its pore diameter is 50 -200 nanometers, with a porosity greater than 60%, use it as a bonding surface for packaging and interconnection, ...

Embodiment 1

[0035] Such as figure 1 As shown, the present invention is a low-temperature bonding method for integrated packaging, including:

[0036] (1) First, the electrothermal material device is cut into several thermoelectric chips 3, the bonding surface of the thermoelectric chips 3 is cleaned by a standard RCA process, and then a nickel metal layer 2 with a thickness of 1 micron is deposited on the substrate by a sputtering process, Finally, on the nickel metal layer 2, a metal nickel layer 1 with a nanopore structure is prepared by a dealloying method.

[0037]The preparation method of the metal nickel layer 1 with a nanopore structure is as follows: firstly, the thermoelectric chip 3 with the nickel metal layer 2 is placed in HCl solution for cleaning, the concentration of the HCl solution is 5%, and the cleaning time is 1 minute, which is used to remove the electric heat. The oxide on the surface of the nickel metal layer 2 of the wafer 3, after that, the thermoelectric chip 3 ...

Embodiment 2

[0043] Such as figure 1 As shown, the present invention is used for the low-temperature bonding method of integrated package, comprises the following steps:

[0044] (1) The electrothermal material device is cut into several thermoelectric chips 3, and the bonding surface of the thermoelectric chips 3 is cleaned by standard RCA process, and then a nickel metal layer 2 is deposited on the substrate by a sputtering process, and the thickness of the nickel metal layer 2 is Two microns, and finally the metal nickel layer 1 with a nanopore structure is prepared by corrosion on the surface of the metal nickel layer 2 by dealloying method.

[0045] The method for preparing the metal nickel layer 1 with a nanopore structure is as follows: the thermoelectric wafer 3 that has been sputtered with the nickel metal layer 2 is placed in a hydrochloric acid solution for cleaning, the concentration of the hydrochloric acid solution is 5%, and the cleaning time is 1 minute for removing The su...

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Abstract

By constructing a nano metal bonding layer, low-temperature metallurgical bonding and high-temperature service of a thermoelectric device are realized by utilizing a nano effect; a metal nickel layerwith a nano-pore structure is prepared on the surface of a nickel metal layer, a nickel nano-needle cone structure layer is prepared on the surface of a copper metal layer to serve as a bonding connection surface, and after nano-bonding layers of different structural forms are bonded, a packaging interconnection interface nano-cylindrical flexible layer is formed and used for matching and absorbing large thermal stress impact in the service process of a device, so crack damage caused by interface thermal stress is reduced, and the reliability of the thermoelectric device in the high-temperature service process is improved.

Description

technical field [0001] The invention belongs to the technical field of semiconductor device manufacturing, and in particular relates to a high-reliability thermoelectric device and a preparation method. Background technique [0002] Thermoelectric materials are new energy materials that can realize direct conversion of thermal energy and electrical energy, and have broad application prospects in the fields of thermoelectric power generation, precise refrigeration temperature control, solar power generation, automobile and industrial waste heat power generation utilization. [0003] The typical packaging integration process of thermoelectric devices is to use soldering or bonding method to integrate the bulk (Bi 2 Te 3 base alloys, etc.) or nanostructured thermoelectric materials (carbon nanotubes, silicon nanowires, etc.) 2 o 3 or AlN) or micro-nano functional devices to form a coupling matching and transmission of current and heat flow. Heterogeneous interfaces such as m...

Claims

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Application Information

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IPC IPC(8): H01L35/02H01L35/08H01L35/34
CPCH10N10/80H10N10/817H10N10/01
Inventor 宋晓辉赵华东吕鹏张瑞张景双李和林许俊杰张响宋红章田增国
Owner ZHENGZHOU UNIV
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