Copper-containing laminated etching solution, etching method and application thereof

Abstract

The invention relates to the field of metal surface chemical treatment, in particular to a copper-containing laminated etching solution, an etching method and application thereof. The etching solutioncomprises a main agent, and by weight, the main agent comprises, 1-20 parts of an oxidizing agent, 0.01-1 part of a fluorine ion source, 0.01-5 parts of inorganic acid, 1-15 parts of organic acid, 1-15 parts of organic alkali, 0.01-5 parts of a hydrogen peroxide stabilizer, 0.01-1 part of a metal corrosion inhibitor and the balance solvent, wherein the total weight parts are 100. The etching solution is low in cost, free of phosphorus, environmentally friendly and low in waste liquid treatment cost; cracks at different metal interfaces can be effectively inhibited; the copper-containing laminated etching solution has high copper ion loading capacity, and has excellent etching characteristics, wherein the unilateral CD-Loss is smaller than 0.9 micrometer, and the taper is 35-45 degrees; and the chamfering problem can be solved, bubbles of an insulating layer are effectively avoided, and meanwhile the step of copper pre-dissolving can be omitted.

Description

technical field [0001] The invention relates to the field of metal surface chemical treatment, more specifically, the invention relates to a copper-containing lamination etchant, an etching method and an application thereof. Background technique [0002] With the development of semiconductor, flat-panel display and micro-electromechanical processes toward large size and high-speed response, the traditionally used aluminum metal wires can no longer meet the requirements of electron mobility, so metal materials with lower resistance values ​​(such as copper metal) are used. As a wire, it has the advantage of improving the speed of current conduction. However, although copper metal has the advantage of low resistance, it also has the disadvantages of being easily oxidized and unable to perform dry etching. Furthermore, the application of copper metal wires faces difficulties in use due to poor bonding between copper metal and the glass substrate or silicon substrate. If other...

AI Technical Summary

Problems solved by technology

However, there are still some problems to be overcome, for example: (1) cracks are easily generated between different metal film layers due to electrochemical reactions, which will lead to disconnection; (2) there are chamfers, which will cause subsequent process climbing and disconnection, which will affect the yield ; (3) When constructing the insulating layer, air bubbles are likely to be generated in the insulating layer under high temperature conditions; (4) CD-LOSS is relatively large, which cannot meet the needs of high-precision products

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