Device and method for preparing potassium fluosilicate and nitric acid by using fluorine-containing nitric acid etching solution

A technology of potassium fluorosilicate and etching solution, which is applied in the direction of fluorosilicic acid, nitric acid, nitrogen oxides/oxo acids, etc., can solve the problems of continuous production operation difficulty and increased production cost, and facilitate large-scale production , obvious economic benefits, realize the effect of waste resources

Pending Publication Date: 2021-02-12
陕西水发环境有限公司
View PDF6 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

There are many kinds of auxiliary materials added in this patent, and the difficulty of continuous production operation and the increase of production cost

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Device and method for preparing potassium fluosilicate and nitric acid by using fluorine-containing nitric acid etching solution
  • Device and method for preparing potassium fluosilicate and nitric acid by using fluorine-containing nitric acid etching solution

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] see figure 1 The device provided in this embodiment to prepare potassium fluorosilicate and nitric acid by using fluorine-containing nitric acid etching solution includes an etching solution pretreatment system, a potassium fluorosilicate recovery system, and a nitric acid evaporation recovery system; the potassium fluorosilicate recovery system includes sequentially connected The potassium fluorosilicate preparation unit and the potassium fluorosilicate drying unit; the etching solution pretreatment system is connected with the potassium fluorosilicate preparation unit; the nitric acid evaporation recovery system is connected with the potassium fluorosilicate preparation unit.

[0034] In this embodiment, the etchant pretreatment system includes a first reaction kettle 1, a silicon slag thickener 2 and a precipitation tank 3 which are connected in sequence; the precipitation tank 3 is connected to a potassium fluorosilicate preparation unit.

[0035] In the present emb...

Embodiment 2

[0045] Based on the preparation device of embodiment 1, it utilizes fluorine-containing nitric acid etchant to prepare potassium fluorosilicate and the method for nitric acid comprising the following steps:

[0046] 1) The fluorine-containing nitric acid etching solution enters the etching solution pretreatment system, and silicon dioxide is added through stirring and solid-liquid separation to obtain a fluorine-containing silicon nitric acid solution;

[0047] 2) The fluorine-containing silicon nitric acid solution in step 1) is reacted with a saturated potassium nitrate solution in the potassium fluorosilicate preparation unit, and after filtration, the crude potassium fluorosilicate product and a mixed solution containing nitric acid and potassium nitrate are obtained; the crude fluorosilicate The potassium fluorosilicate product is passed through the potassium fluorosilicate drying unit to obtain the potassium fluorosilicate product;

[0048] 3) After the mixed solution co...

Embodiment 3

[0061] With concrete application, illustrate the method utilizing nitric acid and potassium fluorosilicate prepared by fluorine-containing nitric acid etchant, specifically as follows:

[0062] 1) Take 1000L of fluorine-containing nitric acid (100g / L of fluorine ion) etchant and place it in the first reaction kettle 1, add 59kg of 90% silicon dioxide, and stir for 2 hours; after the reaction, pass through the first feeding pump P1 Pour into the silicon slag thickener 2 to separate and remove suspended solids, and the separated solution enters the sedimentation tank 3 to collect for later use;

[0063] 2.1) Take 99% potassium nitrate and transport it to the potassium nitrate dissolving tank 6 through the screw feeder 5 for dissolving, then pass the dissolved potassium nitrate through the potassium nitrate filter 7 through the first liquid inlet pump P4 and then enter the potassium nitrate semen tank 8 Obtain saturated potassium nitrate solution;

[0064] 2.2) Take 200L of satu...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention relates to a device and a method for preparing potassium fluosilicate and nitric acid by using fluorine-containing nitric acid etching liquid. The device comprises an etching liquid pretreatment system, a potassium fluosilicate recovery system and a nitric acid evaporation recovery system, wherein the potassium fluosilicate recovery system comprises a potassium fluosilicate preparation unit and a potassium fluosilicate drying unit which are connected in sequence; wherein the nitric acid evaporation recovery system is connected with the potassium fluosilicate preparation unit, andthe etching liquid pretreatment system comprises a first reaction kettle, a silicon slag thickener and a precipitation tank which are connected in sequence; the precipitation tank is connected with the potassium fluosilicate preparation unit; the potassium fluosilicate preparation unit comprises a second reaction kettle, a potassium nitrate dissolving tank and a centrifugal machine; the second reaction kettle is respectively connected with the settling tank, the potassium nitrate dissolving tank and the centrifugal machine; and the centrifuge is connected with the potassium fluosilicate drying unit and the nitric acid evaporation recovery system respectively. The device and the method have the advantages of simple structure, less auxiliary materials, good continuity, high treatment efficiency and low production and operation cost, realizes the recycling of waste acid, and maximally saves resources.

Description

technical field [0001] The invention belongs to the technical field of waste water recovery and treatment, and relates to a device and a method for preparing potassium fluorosilicate and nitric acid by using a fluorine-containing nitric acid etching solution. Background technique [0002] Photovoltaic, liquid crystal, metal material surface treatment, microelectronics and other industries, in the production process of polycrystalline silicon wafers, etching (usually nitric acid-hydrofluoric acid mixed etching) waste liquid and waste water produced by cleaning etched silicon wafers will contain A certain amount of fluoride ion and nitrate ion. This waste nitric acid contains impurities such as HF and fluoride salts, has hazardous characteristics such as toxicity, reactivity, and corrosion, and belongs to hazardous industrial waste. Therefore, it is imperative to carry out harmless disposal and resource utilization of the waste nitric acid . [0003] At present, most of them...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C01B33/10C01B21/46
CPCC01B33/103C01B21/46C01P2006/80
Inventor 邢顶峰李佳明王立君王振
Owner 陕西水发环境有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products