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A kind of antimony selenide crystal, its preparation method and application

A technology of antimony selenide prefabricated layer and antimony selenide, applied in chemical instruments and methods, crystal growth, self-solid, etc., can solve the problems of disordered orientation, orientation specific gravity (low peak intensity specific gravity, etc.), to improve efficiency and reduce suspension Bonds and grain boundaries, the effect of increasing the transmission rate

Active Publication Date: 2022-02-11
HENAN UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the above-mentioned antimony selenide crystal film preparation method still has certain limitations, the grain size is limited to 1-2 μm, the orientation is disordered, and the (001) orientation specific gravity (peak intensity specific gravity) is low

Method used

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  • A kind of antimony selenide crystal, its preparation method and application
  • A kind of antimony selenide crystal, its preparation method and application
  • A kind of antimony selenide crystal, its preparation method and application

Examples

Experimental program
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Effect test

Embodiment 1

[0033] A preparation method of antimony selenide crystal, comprising the steps of:

[0034] (1) Soda-lime glass (SLG, 2cm×2cm) substrate was cleaned with acetone, isopropanol, ethanol and high-purity water, and metal molybdenum with a thickness of 1000nm was prepared on the SLG substrate by DC magnetron sputtering process as the back electrode .

[0035] (2) A prefabricated layer of amorphous antimony selenide with a thickness of 1000nm was prepared on a Mo / SLG substrate by radio frequency magnetron sputtering, the sputtering power was 80W, and the sputtering time was 100min. X-ray diffraction pattern as figure 1 shown by figure 1 It can be seen that there is only one Mo electrode peak, which does not contain crystalline antimony selenide, and the molar ratio of Sb:Se in the amorphous antimony selenide prefabricated layer is 2:3.

[0036] (3) Place the amorphous antimony selenide prefabricated layer and 2g of selenium grains at both ends of the double-temperature zone rapid...

Embodiment 2

[0038] A preparation method of antimony selenide crystal, comprising the steps of:

[0039] (1) Clean the soda-lime glass (SLG, 2cm×2cm) substrate with acetone, isopropanol, ethanol and high-purity water, and prepare amorphous antimony selenide with a thickness of 1200nm on the SLG substrate by radio frequency magnetron sputtering process For the prefabricated layer, the sputtering power is 80W, the sputtering time is 120min, and the molar ratio of Sb:Se in the amorphous antimony selenide prefabricated layer is 2:3.

[0040] (2) Place the amorphous antimony selenide prefabricated layer and 2g selenium grains at both ends of the double temperature zone rapid annealing furnace respectively, and the temperature range of the amorphous antimony selenide thin film end is set as: C1:30, T1:50, C2: 300, T2: 300, C3: 300, T3: 40, C4: 400, T4: 900, C5: 400, T5: -121; the temperature range of the selenium source is set as: C1: 30, T1: 50, C2: 400, T2: 300, C3: 400, T3: 40, C4: 480, T4: ...

Embodiment 3

[0044] A preparation method of antimony selenide crystal, comprising the steps of:

[0045] (1) Soda-lime glass (SLG, 2cm×2cm) substrate was cleaned with acetone, isopropanol, ethanol and high-purity water, and metal molybdenum with a thickness of 1000nm was prepared on the SLG substrate by DC magnetron sputtering as the back surface. electrode.

[0046] (2) Prepare an amorphous antimony selenide prefabricated layer with a thickness of 1000nm on the Mo / SLG substrate by radio frequency magnetron sputtering process, the sputtering power is 80W, and the sputtering time is 100min. Sb:Se molar ratio=2:3.

[0047] (3) Place the amorphous antimony selenide prefabricated layer and 2g selenium grains at both ends of the dual temperature zone rapid annealing furnace, and the temperature range of the amorphous antimony selenide thin film end is set as: C1: 30, T1: 50, C2 : 300, T2: 300, C3: 300, T3: 40, C4: 400, T4: 900, C5: 400, T5: -121; the temperature range of the selenium source i...

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Abstract

The invention discloses an antimony selenide crystal, a preparation method and application thereof. The present invention prepares the antimony selenide amorphous prefabricated layer by the magnetron sputtering method. During the selenization, the selenium source and the prefabricated layer are respectively placed at both ends of a dual-temperature zone rapid annealing furnace, and the flow rate of the carrier gas, the selenization pressure and the dual temperature are adjusted. The temperature rise program at both ends of the zone rapid annealing furnace makes the selenization pressure far lower than the saturated vapor pressure of elemental selenium at the selenium source temperature, increases the selenium flux during selenization, and obtains a large grain selenization along the (hk0) orientation antimony crystals. The antimony selenide crystal prepared by the method of the present invention grows along the (hk0) orientation and has larger grains, which effectively avoids the influence of grain boundaries and dangling bonds on carrier transport, and improves the flow rate of carriers in a specific direction. The transmission rate can effectively improve the efficiency of photoelectrochemical hydrogen production, and has a wide range of applications in the field of photoelectrochemistry.

Description

technical field [0001] The invention belongs to the field of photoelectric material preparation, and in particular relates to an antimony selenide crystal, a preparation method and application thereof. Background technique [0002] Antimony selenide is a binary compound semiconductor. The constituent elements antimony and selenium are low-toxic and have abundant reserves. 5 cm -1 ), which has attracted much attention in the field of optoelectronics in recent years. Antimony selenide crystals have a unique quasi-one-dimensional ribbon crystal structure. The atoms in the ribbons are connected by covalent bonds, and the ribbons are stacked together by van der Waals force, which leads to the transport of carriers in the ribbons. The rate is much greater than the transmission rate between the bands, so the antimony selenide material has strong anisotropy in optical and electrical properties. [0003] Due to its own crystal structure, antimony selenide crystals can form more re...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/46C23C14/35C23C14/54C23C14/06C23C14/58C30B1/02C30B28/02C25B11/087C25B1/55C25B1/02
CPCC30B29/46C23C14/35C23C14/0623C23C14/5806C30B1/02C30B28/02C23C14/54C25B1/02Y02P20/133
Inventor 刘新胜刘永军刘景玲李二浩庄玉君程轲杜祖亮
Owner HENAN UNIVERSITY