Wide bandgap power semiconductor device and preparation method
A power semiconductor and wide bandgap technology, which is applied in the field of wide bandgap power semiconductor devices and its preparation, can solve the problems of high electric field of the gate oxide layer and low channel mobility
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[0047] The second embodiment of the present disclosure provides a method for fabricating a wide bandgap power semiconductor device, please refer to figure 2 , including: S11, cleaning the substrate, ion-implanting the p-type doped layer, the n+ source region layer and the p+ base region layer in the substrate, the distribution of the p-type doped layer 40 is asymmetrical in the scope of one cell, and the n+ source region layer The region layer 50 is adjacent to the p+ base region layer 60; S12, etching the trench 70, the bottom of the trench 70 does not exceed the bottom of the p-type doped layer 40, and its right side wall is closely adjacent to the boundary of the p-type doped layer 40, which There is a gap between the left side wall and the boundary of the p-type doped layer 40; S13, making a gate oxide layer 80 on the trench 70 and the upper surface of the substrate; S14, depositing highly doped polysilicon in the trench 70, and etching to obtain a gate electrode contact ...
Embodiment 1
[0063] Step S11: Refer to Figure 4 , cleaning the SiC substrate, the SiC substrate epitaxially grows a multi-layer SiC epitaxial layer on the n+ type SiC substrate 10 to form a sandwich structure, which is as follows from bottom to top: n-type buffer layer 20, n-drift layer 30, followed by surface cleaning, specifically:
[0064] a. Use acetone and ethanol to ultrasonically clean three times in sequence, and then rinse with deionized water.
[0065] b. Put the SiC epitaxial material substrate after organic ultrasonication into concentrated sulfuric acid and hydrogen peroxide solution and cook for at least 10 minutes.
[0066] c. Boil the SiC epitaxial material substrate boiled in concentrated sulfuric acid with No. 1 solution and No. 2 solution for 15 minutes, rinse with deionized water, and blow dry with nitrogen gas for use. The No. 1 liquid is a mixture of ammonia, hydrogen peroxide and deionized water, the volume ratio of ammonia: hydrogen peroxide: deionized water = 1:...
Embodiment 2
[0085] Step S21: Refer to Figure 12 , cleaning the SiC substrate, the SiC substrate epitaxially grows multiple layers of SiC epitaxial layers on the n+ type SiC substrate 10 to form a sandwich structure, and the order from bottom to top is: n type buffer layer 20, n type coupling drift Layer 31 and n-type accumulation layer 32, the doping concentration of n-type accumulation layer 32 is lower than the concentration of n-type coupling drift layer 31, then carry out surface cleaning, specifically:
[0086] a. Use acetone and ethanol to ultrasonically clean three times in sequence, and then rinse with deionized water.
[0087] b. Put the SiC epitaxial material substrate after organic ultrasonication into concentrated sulfuric acid and hydrogen peroxide solution and cook for at least 10 minutes.
[0088] c. Boil the SiC epitaxial material substrate boiled in concentrated sulfuric acid with No. 1 solution and No. 2 solution for 15 minutes, rinse with deionized water, and blow dry...
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