Anti-fuse memory cell and manufacturing method thereof

Abstract

The embodiment of the invention relates to an anti-fuse memory cell and a manufacturing method thereof, and the anti-fuse memory cell comprises a substrate which is provided with a selection gate structure, a first doped region and a second doped region, an anti-fuse gate dielectric layer, an anti-fuse gate, and a third doped region. The first doped region and the second doped region are respectively located in the substrate at two opposite sides of the selection gate structure, and the doped ion types of the first doped region and the second doped region are the same; the anti-fuse gate dielectric layer is positioned on the first doped region; the anti-fuse gate is positioned on the anti-fuse gate dielectric layer; and the third doped region is located between the second doped region andthe selection gate structure, the doped ion type of the third doped region is the same as that of the second doped region, and the doped ion concentration of the third doped region is smaller than that of the second doped region. Damage of an electric field to the selection gate dielectric layer can be reduced, so that the reliability of the selection transistor in the anti-fuse storage unit is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to an antifuse memory unit and a manufacturing method thereof. Background technique [0002] Memory devices can generally be classified into volatile memory devices and non-volatile storage devices. Non-volatile storage devices can be further classified into read only memory (ROM), one time programmable memory (OTP memory) and re-readable memory. Among them, the one-time programmable memory can be classified into fuse type and anti-fuse type. [0003] In semiconductor devices such as DRAM (Dynamic Random Access Memory), generally redundant cells are used to replace defective cells that cannot work normally, so as to repair defective addresses. In storing defect addresses, antifuse memory is often used to store information. [0004] The smallest unit of an antifuse memory usually consists of an antifuse transistor and a select transistor. The working principle of the antif...

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Problems solved by technology

[0005] Embodiments of the present invention provide an antifuse memory unit and a manufacturing method thereof, which solve the problem that the source / drain is subjected to instantaneous high voltage and causes damage to the select gate structure when dielectric breakdown occurs in the antifuse gate dielectric layer

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