Growth control method and system for growing silicon carbide crystals based on liquid phase epitaxy
A growth control and liquid phase epitaxy technology, which is applied in liquid phase epitaxy layer growth, chemical instruments and methods, single crystal growth, etc. Control the crystal interface morphology and other issues to achieve the effect of reducing the impact of impurities, improving the overall quality, and controlling accurately
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Embodiment 1
[0047] Such as figure 1 As shown, this embodiment provides a growth control method for growing silicon carbide crystals based on liquid phase epitaxy, by monitoring the current or voltage at both ends of the crystal interface to determine the crystal interface morphology of silicon carbide crystals, and based on the monitoring Results Adjusting the magnitude and / or direction of the direct current applied to both ends of the crystal interface, and finally achieving the purpose of precisely controlling the morphology of the crystal interface, is a method to control the growth of the crystal interface by using the Peltier effect.
[0048] The growth control method comprises the steps of:
[0049] Step S1, loading the metal flux and silicon raw materials into the graphite crucible 1 for growing silicon carbide crystals by liquid phase epitaxy, and fixing the upper surface of the oriented seed crystal 2 on the pulling mechanism 3;
[0050] Step S2, evacuating the crystal growth fu...
Embodiment 2
[0069] Such as figure 2 As shown, this embodiment also provides a growth control method for growing silicon carbide crystals based on liquid phase epitaxy, through the method of this embodiment can be achieved as follows figure 2 The silicon carbide crystal with a smooth downward convex crystal interface can effectively avoid the formation of "facets" of the silicon carbide crystal. The growth control method for growing silicon carbide crystals based on the liquid phase epitaxy method described in this embodiment is the same as that in the embodiment. The growth control methods for growing silicon carbide crystals based on the liquid phase epitaxy method are basically the same, the difference between the two is that in step S4, more than two groups of probe groups 4 are arranged above and below the oriented seed crystal 2, each The probe group 4 described in the group monitors and adjusts the crystallization interface of silicon carbide crystals in different regions. The con...
Embodiment 3
[0072] Such as image 3 As shown, this embodiment also provides a growth control method for growing silicon carbide crystals based on liquid phase epitaxy. The method of this embodiment can reduce impurities in the crystallization process of silicon carbide crystals and further improve the crystallization quality of silicon carbide crystals. The growth control method for growing silicon carbide crystals based on the liquid phase epitaxy method described in this embodiment is basically the same as the growth control method for growing silicon carbide crystals based on the liquid phase epitaxy method described in the embodiment, the difference between the two lies in step S4 , the outside of the crystal growth furnace is also provided with a constant magnetic field device 6, the direction of the magnetic field generated by the constant magnetic field device 6 is perpendicular to the growth direction of the silicon carbide crystal, and the magnetic field acts on the inside of the ...
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