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GaN-based LED epitaxial structure comprising electronic storage layer and growth method of GaN-based LED epitaxial structure

An epitaxial structure and electronic storage technology, applied in circuits, electrical components, nanotechnology, etc., can solve problems affecting the distribution uniformity of In components in quantum wells, lattice defects, low activation rate, etc., to reduce Auger recombination Efficiency, increase in effective height, and the effect of improving photoelectric performance

Active Publication Date: 2021-03-09
YANGZHOU UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] At present, energy band engineering or an AlGaN electron blocking layer is usually grown between the light-emitting layer and the p-type GaN layer in the world to improve the transport of carriers and the confinement of carriers. The difference in lattice coefficient will cause a large polarization effect in the structure. For example, the AlGaN electron barrier layer will form an electron barrier to suppress electron leakage, and at the same time, it will not be conducive to holes due to the polarization effect between the GaN barrier layer and the GaN barrier layer. In addition, the ionization activation rate of p-type Mg doping in the AlGaN electron blocking layer is very low, so that the hole concentration is low, and due to the growth conditions, the growth of the AlGaN electron blocking layer will produce lattice defects and relative Larger stress, and affect the distribution uniformity of In composition in the quantum well

Method used

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  • GaN-based LED epitaxial structure comprising electronic storage layer and growth method of GaN-based LED epitaxial structure
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  • GaN-based LED epitaxial structure comprising electronic storage layer and growth method of GaN-based LED epitaxial structure

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Embodiment 1

[0035] This embodiment provides an LED epitaxial structure, which sequentially includes: processing the substrate (1), growing a low-temperature nucleation layer (2), growing a non-doped low-temperature u-GaN layer (3), growing a Si-doped n-GaN layer (4), grown In y Ga 1-y N / GaN light-emitting layer (5), grown In x Ga 1-x N electron storage layer (6), growth of AlGaN electron blocking layer (7), growth of P-type GaN contact layer (8), and cooling down (9). Such as image 3 , the epitaxial layer growth method of the above structure is as follows,

[0036] Step 101, processing the substrate (1):

[0037] In a hydrogen atmosphere, the sapphire substrate is annealed at a temperature of 1100° C. to clean the surface of the substrate.

[0038] Step 102, growing a low-temperature nucleation layer GaN (2):

[0039] At 550°C, the pressure of the reaction chamber is 500 Torr, and ammonia and TMGa are introduced to grow a low-temperature nucleation layer GaN with a thickness of 30...

Embodiment 2

[0058] This embodiment provides a conventional LED epitaxial structure, the epitaxial structure sequentially includes: processing the substrate (1), growing a low-temperature nucleation layer (2), growing an undoped low-temperature u-GaN layer (3), growing a doped Si n-GaN layer (4), grown In y Ga 1-y N / GaN light-emitting layer (5), growing AlGaN electron blocking layer (6), growing P-type GaN contact layer (7), and cooling down (8). Using the conventional LED epitaxial growth method, the specific steps are:

[0059] Step 201, processing the substrate (1):

[0060] In a hydrogen atmosphere, the sapphire substrate is annealed at a temperature of 1100° C. to clean the surface of the substrate.

[0061] Step 202, growing a low-temperature nucleation layer GaN (2):

[0062] At 550°C, the pressure of the reaction chamber is 500 Torr, and ammonia and TMGa are introduced to grow a low-temperature nucleation layer GaN with a thickness of 30 nm on the sapphire substrate. To 1100°C...

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Abstract

The invention discloses a GaN-based LED epitaxial structure comprising an electron storage layer and a growth method of the GaN-based LED epitaxial structure, an In<x>Ga<1-x>N electron storage layer is arranged between an In<y>Ga<1-y>N / GaN light-emitting layer and an AlGaN electron blocking layer, wherein the x value in In<x>Ga<1-x>N is 0.05. An In<x>Ga<1-x>N quantum barrier is introduced betweenthe last barrier layer of the light-emitting layer and the electron blocking layer to serve as an electron storage layer. After the electron storage layer is introduced, the introduction of the InGaNmaterial can form an electron potential well between the electron barrier layer and the GaN barrier, the potential well can store a large number of leaked electrons, the auger recombination efficiencyof the device can be effectively reduced, the polarization electric field between the device and the electron barrier layer can be increased, the effective height of the electron barrier layer can beeffectively increased, and electrons can be better limited; and finally, the photoelectric property of the GaN-based LED can be improved.

Description

technical field [0001] The invention relates to the field of LED design and application, in particular to an LED epitaxial growth method for improving carrier transport and distribution in a light-emitting region and the obtained epitaxial layer structure. Background technique [0002] As a new lighting source with high efficiency, energy saving and environmental protection, GaN light-emitting diode (LED) is widely used in backlighting, energy-saving lighting and general lighting due to its advantages of high brightness, low power consumption, long life and low power. And will completely replace traditional incandescent and fluorescent lamps. [0003] Therefore, the factors that affect the optoelectronic performance of LEDs have been focused on, especially the problem that the optoelectronic performance of LEDs is greatly reduced due to the decrease in efficiency when the LED operates under high current injection. At present, researchers have proposed that the main reasons ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/14H01L33/00B82Y40/00
CPCH01L33/14H01L33/007B82Y40/00
Inventor 程立文张家荣李侦伟曾祥华王俊迪
Owner YANGZHOU UNIV
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