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Coating liquid for forming metal oxide film, oxide insulator film, field-effect transistor, display element, image display device, and system

A field-effect transistor and oxide film technology, applied in transistors, metal material coating processes, electrical components, etc., can solve the problems of high process cost, complexity, and difficulty in freely controlling oxide film formulations and physical properties. performance effect

Pending Publication Date: 2021-03-16
RICOH KK
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] However, there is a problem that these vacuum processes require complicated and expensive equipment and safety measures regarding gas sources, and the process costs are high
In addition, the restriction on the source gas makes it difficult to freely control the formulation and physical properties of the oxide film

Method used

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  • Coating liquid for forming metal oxide film, oxide insulator film, field-effect transistor, display element, image display device, and system
  • Coating liquid for forming metal oxide film, oxide insulator film, field-effect transistor, display element, image display device, and system
  • Coating liquid for forming metal oxide film, oxide insulator film, field-effect transistor, display element, image display device, and system

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1-1

[0268]

[0269] Zirconium oxynitrate dihydrate (0.50 mol) and magnesium nitrate hexahydrate (0.50 mol) were weighed. Then, ethylene glycol monomethyl ether (500 mL), propylene glycol (1800 mL), water (1200 mL), and isopropanol (1800 mL) were added and dissolved to produce a coating liquid for forming the oxide insulator film 1-1.

Embodiment 1-2 to 1-12

[0271]

[0272] In the same manner as in Example 1-1, using the material formulations shown in Tables 1-1 and 1-2, oxide insulator films 1-2 to 1-12 for forming Examples 1-2 to 1-12 were produced. 1-12 of the coating solution.

[0273] (Reference Examples 1-13 to 1-15)

[0274]

[0275] In the same manner as in Example 1-1, using the material formulations shown in Tables 2-1 and 2-2, oxide insulator films 1-13 to 1-15 for forming Reference Examples 1-13 to 1-15 were produced. 1-15 of the coating solution.

[0276] [Table 1-1]

[0277]

[0278] [Table 1-2]

[0279]

[0280] [table 2-1]

[0281]

[0282] [Table 2-2]

[0283]

[0284] In Table 1-1, Table 1-2, Table 2-1, and Table 2-2, the names of materials and solvents are as follows.

[0285]

[0286] ZrO(NO 3 ) 2 ·2H 2 O: zirconium oxynitrate dihydrate

[0287] HfCl 4 : Hafnium chloride

[0288] ZrO(C 8 H 15 O 2 ) 2 : Bis(2-ethylhexanoate)zirconia

[0289] ZrCl 4 ·8H 2 O: Zirconium dichlori...

Embodiment 2-1

[0324] Using a spin coater, the coating liquid 1-1 in Table 1-1 and Table 1-2 was printed on the alkali-free glass substrate that had undergone UV ozone cleaning. Good printing performance. The substrate was dried on a hot plate heated to 120°C for 10 minutes, and then baked at 400°C for 1 hour in the atmosphere to obtain a transparent oxide film.

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Abstract

A field-effect transistor including: a source electrode and a drain electrode; a gate electrode; a semiconductor layer; and a gate insulating layer, wherein the gate insulating layer is an oxide insulator film including A element and B element, the A element being one or more selected from the group consisting of Zr and Hf and the B element being one or more selected from the group consisting of Be and Mg.

Description

technical field [0001] The present invention relates to a coating solution for forming a metal oxide film, an oxide insulator film, a field effect transistor, a display element, an image display device, a system, a method for producing an oxide insulator film, and a method for producing a field effect transistor . Background technique [0002] In recent years, among flat panel displays, a liquid crystal display (LCD) or an organic EL display having an active matrix thin film transistor (AM-TFT) as a backplane has become mainstream. Semiconductors used for TFTs are roughly classified into the following three types: amorphous silicon (a-Si), low temperature polysilicon (LTPS), and In-Ga-Zn-O (IGZO)-based oxide semiconductors. Among them, expectations are high for oxide semiconductor TFTs (hereinafter referred to as oxide TFTs), and research and development have been conducted worldwide (for example, see Non-Patent Document 1). [0003] Meanwhile, the gate insulating film is ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/49H01L29/786H01L29/66H01L21/02
CPCH01L29/4908H01L29/7869H01L29/66969H01L21/02282H01L21/02189H01L21/02181H01L21/02192H01L21/02194C23C18/1216G02F1/1368H01L21/02565H01L21/445H01L27/1225H10K59/1213
Inventor 植田尚之中村有希安部由希子松本真二曾根雄司早乙女辽一新江定宪草柳岭秀
Owner RICOH KK