Semiconductor structure and forming method thereof

Abstract

The invention discloses a semiconductor structure and a forming method thereof. The method comprises the following steps: providing a substrate; forming a first electromagnetic film on the substrate,wherein the surface of a part of the first electromagnetic film is provided with a tunnel layer and a second electromagnetic layer located on the surface of the tunnel layer; forming a first dielectric film on the surface of the first electromagnetic film, the surface of the side wall of the tunnel layer, and the surfaces of the side wall and the top of the second electromagnetic layer; forming asecond dielectric layer on the surface of the first dielectric film located at the top of the second electromagnetic layer; etching back the first dielectric film by using a first etching process until the surface of the first electromagnetic film is exposed, and forming a first dielectric layer on the surface of the side wall of the tunnel layer and the surfaces of the top and the side wall of the second electromagnetic layer, wherein the etching rate of the first etching process on the first dielectric film is higher than the etching rate of the first etching process on the second dielectriclayer; and etching the first electromagnetic film by taking the first dielectric layer and the second dielectric layer as masks until the surface of the substrate is exposed, thereby forming a firstelectromagnetic layer. The semiconductor structure formed by the method is good in performance.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a semiconductor structure and a forming method thereof. Background technique [0002] MRAM (Magnetic Random Access Memory) is a non-volatile magnetic random access memory. It has the high-speed read and write capabilities of static random access memory (SRAM), high integration of dynamic random access memory (DRAM) and power consumption far lower than DRAM, compared with flash memory (Flash), with the use of time Increase performance without degradation. Due to the above-mentioned characteristics of MRAM, it is called universal memory and is considered to be able to replace SRAM, DRAM, EEPROM and Flash. [0003] Unlike traditional random access memory chip fabrication technology, data in MRAM is not stored in the form of charge or current, but in a magnetic state, and is sensed by measuring resistance without disturbing the magnetic state. MRAM uses a magne...

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Problems solved by technology

[0004] However, the performance of the magnetic tunnel junction prepared by the prior art is poor

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