Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Gallium arsenide-based LED chip and preparation method thereof

An LED chip, gallium arsenide-based technology, applied in electrical components, circuits, semiconductor devices, etc., can solve the problems of low brightness of the chip, cumbersome manufacturing process, etc., and achieve the effect of increasing brightness

Inactive Publication Date: 2021-03-30
SHANDONG INSPUR HUAGUANG OPTOELECTRONICS
View PDF9 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] In the embodiment of the present invention, a gallium arsenide-based LED chip and its preparation method are provided to solve the problems of low brightness and cumbersome manufacturing process of the existing chip

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Gallium arsenide-based LED chip and preparation method thereof
  • Gallium arsenide-based LED chip and preparation method thereof
  • Gallium arsenide-based LED chip and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0037] Such as figure 2 As shown, the preparation method of the LED chip specifically includes the following steps:

[0038] S1, growing a layer of indium tin oxide on the front of the wafer to form a current spreading layer;

[0039] S2, thinning the wafer substrate completed in step S1;

[0040] S3, growing a layer of silicon dioxide on the back of the wafer completed in step S2 as a protective layer, and using photoresist to make a mask pattern, etching out the N-face electrode area, and then removing the glue and cleaning;

[0041]S4, vapor-deposit N-face metal on the N-face electrode area, and perform metal alloying, make photoresist on the front side of the wafer, use photoresist on the back side to make N-face dot gold mask pattern, and corrode the N-face electrode pattern, Then remove glue and clean;

[0042] S5, for the wafer completed in step S4, use photoresist to make a mask pattern on the front side, vapor-deposit the P-side metal, and use the lift-off method ...

Embodiment 1

[0054] The thickness of the current spreading layer in step S1 is 1600 angstroms, the annealing temperature is 400° C., and the annealing time is 15 minutes; the thinned substrate in step S2 is 110 μm; the thickness of the silicon dioxide protective layer in step S3 is 2000 angstroms, and the growth temperature is 200°C; the thickness of the photoresist mask pattern in step S4 is 1 μm and the etching time is 1min; the thickness of the N surface electrode in step S4 is 3000 angstroms, and the thickness of the protective photoresist is 2 μm; the alloy temperature is 350° C., and the alloy time is 20min. The film baking temperature is 100° C., and the baking time is 20 minutes.

Embodiment 2

[0056] The thickness of the current spreading layer in step S1 is 2400 angstroms, the annealing temperature is 500° C., and the annealing time is 5 minutes; the thinned substrate in step S2 is 130 μm; the thickness of the silicon dioxide protective layer in step S3 is 4000 angstroms, and the growth temperature is 200° C.; the thickness of the photoresist mask pattern in step S4 is 3 μm, and the etching time is 3 minutes; the thickness of the N surface electrode in step S4 is 6000 angstroms, and the thickness of the protective photoresist is 3 μm; the alloy temperature is 450° C., and the alloy time is 10 minutes. The hard film baking temperature is 120°C, and the baking time is 10 minutes.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
temperatureaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The embodiment of the invention discloses a gallium arsenide-based LED chip and a preparation method thereof. A tube core structure of the LED chip comprises an N-surface electrode, a silicon dioxideprotection layer, a gallium arsenide substrate, an epitaxial layer, a current expansion layer and a P-surface electrode which are sequentially arranged from bottom to top; the N-surface electrode is agold dot pattern, and the area of the N-surface gold dot pattern accounts for 5%-20% of the overall area of the N surface of the die. In a gold dispensing process of the preparation method, a non-N-surface electrode region is protected during alloying by manufacturing a protective layer, and meanwhile, thorough corrosion of an N-surface electrode pattern is ensured. Segmented corrosion is adoptedin the corrosion process, and the problems that the edge of the whole gold dot pattern is irregular due to the fact that the gold dot size is small and an electrode falls off due to the fact that thegold dot passes through an adhesive film multiple times subsequently are effectively solved.

Description

technical field [0001] The invention relates to the technical field of manufacturing semiconductor light-emitting diodes, in particular to a gallium arsenide-based LED chip and a preparation method thereof. Background technique [0002] Gallium arsenide is an important semiconductor material, which belongs to III-V compound semiconductors. Gallium arsenide has a zinc blende lattice structure, a lattice constant of 5.65×10-10m, a melting point of 1237°C, and a band gap of 1.4 electron volts. It is a typical energy band structure material capable of direct transition, and its conduction band is extremely small. Both the value and the maximum value of the valence band are in the center of the Brillouin zone, which makes it have a high electro-optical conversion efficiency and is an excellent material for the preparation of optoelectronic devices. Compared with traditional silicon semiconductor materials, gallium arsenide materials have many advantages such as high electron mob...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/14H01L33/34H01L33/00
CPCH01L33/0054H01L33/14H01L33/34
Inventor 徐晓强程昌辉张兆喜王梦雪闫宝华徐现刚
Owner SHANDONG INSPUR HUAGUANG OPTOELECTRONICS
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com