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CuO multi-phase structure material based on Cu film component and structure design and preparation method thereof

A multi-phase structure and substrate technology, applied in metal material coating process, vacuum evaporation plating, coating, etc., can solve the difficulty of precise control of oxide nanostructure, the difficulty of precise design and control of products, and the work of oxide growth Less problems, to achieve the effect of enhanced physical and chemical properties, enhanced physical and chemical properties, no need for catalysts

Active Publication Date: 2021-04-13
GUANGDONG INST OF NEW MATERIALS
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, most of the current work only studies the effects of thermal oxidation temperature, time, atmosphere, stress, roughness, and electric field. It is still difficult to precisely control the oxide nanostructure. The oxidation can be regulated by designing the metal source composition and structure. Plant growing jobs are still less
[0003] Sputter deposition can be used to design thin film composition and structure, such as multi-layer film and composite film, etc. Therefore, based on the difference of thermally activated diffusion and oxidation rate of different elements, It is expected to prepare oxide-based multiphase structures by combining sputtering deposition and thermal oxidation, but the growth mechanism of thermal oxidation and the unclear interaction between different elements also make it difficult to accurately design and control the product by this method

Method used

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  • CuO multi-phase structure material based on Cu film component and structure design and preparation method thereof
  • CuO multi-phase structure material based on Cu film component and structure design and preparation method thereof
  • CuO multi-phase structure material based on Cu film component and structure design and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0054] Preparation of Cu / C composite film on the Si base of embodiment 1

[0055] The Cu / C composite film was deposited on the N-type Si(100) substrate by the DC / RF co-sputtering method, and the specific preparation process was as follows:

[0056] (1) The N-type Si substrate was ultrasonically cleaned with acetone and ethanol for 15 minutes, dried and stuck to the sample holder, and then put into the sample position in the vacuum chamber.

[0057] (2) Polish the target with sandpaper to remove impurities such as oxides on the surface of the Cu target and the C target.

[0058] (3) Set the following parameters: the background vacuum is 2×10 -4 Pa, argon atmosphere, sputtering pressure 2Pa, co-sputtering of Cu target and C target, in which, the power of DC sputtering Cu target is 150w, the power of RF sputtering C target is 150w, and the co-sputtering time is 30min , Cu / C composite film was obtained by deposition at room temperature.

[0059] The cross-sectional scanning ele...

Embodiment 2

[0060] Example 2 Preparation of CuO nanorods by oxidation of Cu / C composite film on Ni foam

[0061] In this example, CuO nanorods were prepared by thermally oxidizing a Cu / C composite film on foamed Ni. The specific process is as follows:

[0062] (1) Preparation of Cu / C composite film on Ni foam

[0063] Referring to the method described in Example 1, a Cu / C composite film was prepared on a foamed Ni substrate. The only difference from Example 1 is that the substrate material is different. In this embodiment, foamed Ni is used as the substrate.

[0064] (2) Preparation of CuO nanorods by thermal oxidation of Cu / C composite film on Ni foam

[0065] CuO nanorods were prepared by heating the Cu / C composite film grown on foamed Ni by electric field-assisted thermal oxidation method, wherein the thermal oxidation temperature was 400°C, the time was 8h, the air atmosphere, and the electric field strength was 16667Vm -1 , the direction of the electric field is perpendicular to th...

Embodiment 3

[0067] Example 3 Preparation of Cu / C multilayer film on Si base

[0068] This embodiment provides a method for preparing a Cu / C multilayer film on a Si base, and the specific steps are as follows:

[0069] (1) The N-type Si substrate was ultrasonically cleaned with acetone and ethanol for 15 minutes, dried and stuck to the sample holder, and then put into the sample position in the vacuum chamber.

[0070] (2) Polish the target with sandpaper to remove impurities such as oxides on the surface of the Cu target and the C target.

[0071] (3) Set the following parameters: the background vacuum is 2×10 -4 Pa, argon atmosphere, sputtering pressure is 2Pa; first, a Cu layer is deposited on the Si substrate by DC sputtering a Cu target with a power of 150w, and then a C layer is formed on the Cu layer by a RF sputtering C target with a power of 150w, Then use 150w DC sputtering Cu target to deposit on C layer to form Cu layer, then use 150w power RF sputtering C target to form C la...

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Abstract

The invention belongs to the technical field of nano material preparation, and particularly relates to a CuO multi-phase structure material based on Cu film component and structure design and a preparation method thereof. The CuO multi-phase structure material is prepared by oxidizing a Cu film, and the Cu film is a Cu / X composite film or a Cu / X multilayer film doped with an X material; and the X material is metal or metal oxide or nonmetal with the diffusion rate lower than that of Cu or the oxidation temperature higher than that of Cu. Based on different thermal activation diffusion and oxidation rates of different elements, the CuO multi-phase structure material is prepared by combining sputtering deposition and thermal oxidation methods, the physical and chemical properties of the CuO multi-phase structure material are enhanced by increasing active sites, contact area and the like through doping, a porous network layer and the like, and the structural design of the components of the Cu film makes it possible to control the morphology and structure of the CuO multi-phase structure material.

Description

technical field [0001] The invention belongs to the technical field of nanomaterial preparation, and in particular relates to a CuO multiphase structure material based on Cu film composition and structure design and a preparation method thereof. Background technique [0002] One-dimensional metal oxide nanostructures have attracted extensive attention from researchers because of their unique physical and chemical properties and their application value in functional devices. The controllable preparation of metal oxide nanomaterials with different sizes, morphologies, chemical compositions, and structures is the key to the advancement of nanoscience and nanotechnology. The thermal oxidation method has the advantages of simplicity, high efficiency, low cost, and large-scale preparation. It has been successfully used to prepare several single-phase metal oxide nanostructures, and has unique advantages in related aspects. However, most of the current work only studies the effect...

Claims

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Application Information

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IPC IPC(8): C23C14/14C23C14/34C23C14/58
CPCC23C14/14C23C14/34C23C14/5853
Inventor 唐春梅王红莉黄淑琪石倩洪悦许伟汪唯郭朝乾林松盛代明江苏一凡唐鹏
Owner GUANGDONG INST OF NEW MATERIALS
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