CuO multi-phase structure material based on Cu film component and structure design and preparation method thereof

A multi-phase structure and substrate technology, applied in metal material coating process, vacuum evaporation plating, coating, etc., can solve the difficulty of precise control of oxide nanostructure, the difficulty of precise design and control of products, and the work of oxide growth Less problems, to achieve the effect of enhanced physical and chemical properties, enhanced physical and chemical properties, no need for catalysts

Active Publication Date: 2021-04-13

GUANGDONG INST OF NEW MATERIALS

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AI-Extracted Technical Summary

Problems solved by technology

However, most of the current work only studies the effects of thermal oxidation temperature, time, atmosphere, stress, roughness, and electric field. It is still difficult to precisely control the oxide nanostructure. The oxidation can be regulated by designing the metal source composition and structure. Plant growing jobs are still less

[0003] Sputter deposition can be used to design thin film composition and structure, such as multi-laye...

Abstract

The invention belongs to the technical field of nano material preparation, and particularly relates to a CuO multi-phase structure material based on Cu film component and structure design and a preparation method thereof. The CuO multi-phase structure material is prepared by oxidizing a Cu film, and the Cu film is a Cu/X composite film or a Cu/X multilayer film doped with an X material; and the X material is metal or metal oxide or nonmetal with the diffusion rate lower than that of Cu or the oxidation temperature higher than that of Cu. Based on different thermal activation diffusion and oxidation rates of different elements, the CuO multi-phase structure material is prepared by combining sputtering deposition and thermal oxidation methods, the physical and chemical properties of the CuO multi-phase structure material are enhanced by increasing active sites, contact area and the like through doping, a porous network layer and the like, and the structural design of the components of the Cu film makes it possible to control the morphology and structure of the CuO multi-phase structure material.

Application Domain

Vacuum evaporation coatingSputtering coating +1

Technology Topic

Porous networkNonmetal +7

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Examples

Experimental program(17)

Example Embodiment

[0054] Preparation of Cu/C composite film on the Si base of embodiment 1

[0055] The Cu/C composite film was deposited on the N-type Si(100) substrate by the DC/RF co-sputtering method, and the specific preparation process was as follows:

[0056] (1) The N-type Si substrate was ultrasonically cleaned with acetone and ethanol for 15 minutes, dried and stuck to the sample holder, and then put into the sample position in the vacuum chamber.

[0057] (2) Polish the target with sandpaper to remove impurities such as oxides on the surface of the Cu target and the C target.

[0058] (3) Set the following parameters: the background vacuum is 2×10 -4 Pa, argon atmosphere, sputtering pressure 2Pa, co-sputtering of Cu target and C target, in which, the power of DC sputtering Cu target is 150w, the power of RF sputtering C target is 150w, and the co-sputtering time is 30min , Cu/C composite film was obtained by deposition at room temperature.

[0059] The cross-sectional scanning electron microscope morphology of the Cu/C composite film on the Si base is as follows: figure 1 shown.

Example Embodiment

[0060] Example 2 Preparation of CuO nanorods by oxidation of Cu/C composite film on Ni foam

[0061] In this example, CuO nanorods were prepared by thermally oxidizing a Cu/C composite film on foamed Ni. The specific process is as follows:

[0062] (1) Preparation of Cu/C composite film on Ni foam

[0063] Referring to the method described in Example 1, a Cu/C composite film was prepared on a foamed Ni substrate. The only difference from Example 1 is that the substrate material is different. In this embodiment, foamed Ni is used as the substrate.

[0064] (2) Preparation of CuO nanorods by thermal oxidation of Cu/C composite film on Ni foam

[0065] CuO nanorods were prepared by heating the Cu/C composite film grown on foamed Ni by electric field-assisted thermal oxidation method, wherein the thermal oxidation temperature was 400°C, the time was 8h, the air atmosphere, and the electric field strength was 16667Vm -1 , the direction of the electric field is perpendicular to the substrate upward. The structure of the obtained product is CuO layer/C-doped CuO nanorods.

[0066] Surface scanning electron microscope topography of Cu/C composite film on foamed Ni after thermal oxidation, such as figure 2 shown.

Example Embodiment

[0067] Example 3 Preparation of Cu/C multilayer film on Si base

[0068] This embodiment provides a method for preparing a Cu/C multilayer film on a Si base, and the specific steps are as follows:

[0069] (1) The N-type Si substrate was ultrasonically cleaned with acetone and ethanol for 15 minutes, dried and stuck to the sample holder, and then put into the sample position in the vacuum chamber.

[0070] (2) Polish the target with sandpaper to remove impurities such as oxides on the surface of the Cu target and the C target.

[0071] (3) Set the following parameters: the background vacuum is 2×10 -4 Pa, argon atmosphere, sputtering pressure is 2Pa; first, a Cu layer is deposited on the Si substrate by DC sputtering a Cu target with a power of 150w, and then a C layer is formed on the Cu layer by a RF sputtering C target with a power of 150w, Then use 150w DC sputtering Cu target to deposit on C layer to form Cu layer, then use 150w power RF sputtering C target to form C layer on Cu layer, then use 150w DC sputtering Cu target on C layer A Cu layer was deposited on top of the Cu layer, and then a C layer was formed on the Cu layer by radio frequency sputtering of a C target with a power of 150w. The total sputtering time was 60 minutes, and the Cu/C multilayer film was deposited at room temperature.

[0072] The structure of Cu/C multilayer film is Cu/C/Cu/C/Cu/C structure, and the cross-sectional scanning electron microscope morphology of Cu/C multilayer film on Si base is as follows: image 3 shown.

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Classification and recommendation of technical efficacy words

Simple process
Improve physical and chemical properties

CuO multi-phase structure material based on Cu film component and structure design and preparation method thereof

AI-Extracted Technical Summary

Problems solved by technology

Abstract

Image

Examples

Example Embodiment

Example Embodiment

Example Embodiment

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Description & Claims & Application Information

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