Coating device and method for inner wall of polysilicon reduction furnace

Abstract

The invention discloses a film coating device and method for the inner wall of a crystal silicon reduction furnace. The device includes: a base with at least two gas replacement holes; a hollow target which is the same shape as the bell jar and smaller than the bell jar; the material of the target material and the coating target The material is the same, set inside the bell jar; both the bell jar and the target are located on the base; the bell jar has a jacket, and the jacket can be injected with a flow medium with heat; the heating device is set inside the target, used to heat the target Heating; a gas exchange device for gas replacement of the space between the bell and the target; when the target is placed inside the bell, the gas replacement hole is located in the space between the target and the bell; a power supply device with The positive pole connected to the bell jar, and the negative pole connected to the target. The invention can prepare an ultra-thin metal film with uniform structure and strong bonding force on the inner wall of the polysilicon reduction furnace, and can simultaneously coat various positions on the inner wall of the bell jar, thereby avoiding stress concentration or residual problems caused by segmented coating.

Description

technical field [0001] The invention relates to the field of polysilicon preparation, in particular to a coating device and method for the inner wall of a polysilicon reduction furnace. Background technique [0002] Polysilicon is the basic material of silicon-based solar cells and silicon-based semiconductor devices. At present, the modified Siemens method of growing polysilicon using a bell-type chemical vapor deposition reactor (polysilicon reduction furnace) is the mainstream method for producing polysilicon. Austenitic stainless steel alloys are usually selected to manufacture polysilicon reduction furnaces. During the operation of the polysilicon reduction furnace, the thermal radiation emitted by the high-temperature silicon rods is absorbed by the inner wall of the furnace and lost in the form of heat energy. According to statistics, the heat radiation loss accounts for more than 60% of the total operating energy of the polysilicon reduction furnace. [0003] A lay...

AI Technical Summary

Problems solved by technology

In the prior art, the traditional spraying-based film preparation process of the inner wall of the reduction furnace is highly complex. During the spraying process, the reduction furnace bell jar and the spray gun need to make relative movements, and the bell jar needs to continue to rotate at a relatively high speed. has a certain risk

In addition, the spraying method cannot obtain native films with dense tissue and low surface roughness

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