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Method for preparing wrinkle-free graphene film

A graphene film, wrinkle-free technology, applied in the field of preparing wrinkle-free graphene film, can solve problems such as affecting graphene performance and application, reducing graphene mobility, etc., achieving easy control of experimental parameters, convenience for low-cost mass production, Easy-to-use effects

Inactive Publication Date: 2021-04-27
HEBEI UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The formation of wrinkles will reduce the mobility, mechanical strength and thermal conductivity of graphene, which greatly affects the performance and application of graphene.

Method used

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  • Method for preparing wrinkle-free graphene film
  • Method for preparing wrinkle-free graphene film
  • Method for preparing wrinkle-free graphene film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0043] This embodiment discloses a method for preparing a wrinkle-free graphene film, which specifically includes the following steps:

[0044] S1. Cut 250 μm thick copper foil and 500 μm thick tungsten foil into square substrates of suitable size and flatten them; in order to remove contaminants on the copper and tungsten surfaces, ultrasonically clean the substrates in acetone and ethanol for 15 min, respectively, and then Rinse repeatedly with deionized water and dry under nitrogen blowing;

[0045] S2. Put the copper foil directly on the tungsten foil and push it into the heating area of ​​the chemical vapor deposition system together, such as figure 1 As shown; before graphene growth, the whole system was evacuated to below 1.0Pa;

[0046] S3. Fill the quartz tube with hydrogen-argon mixed gas with a flow ratio of 1:20; then heat the system from room temperature to 1100°C within 60 minutes, and anneal at 1100°C for 30 minutes;

[0047] S4. Introduce 6 sccm methane into ...

Embodiment 2

[0050] The difference between this embodiment and Embodiment 1 is that the flow ratio of the hydrogen-argon gas mixture in step S3 is changed to 1:15, and the other steps remain unchanged to obtain the sample to be tested.

Embodiment 3

[0052] The difference between this embodiment and Embodiment 1 is that the flow ratio of the hydrogen-argon gas mixture in step S3 is changed to 1:5, and the other steps remain unchanged to obtain the sample to be tested.

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Abstract

The invention belongs to the field of graphene material growth, and relates to a method for preparing a wrinkle-free graphene film. The method comprises the following steps: S1, cleaning a metal substrate, and blow-drying; S2, placing the dried copper foil in a chemical vapor deposition vacuum system; S3, introducing mixed gas of hydrogen and argon into the system, raising the temperature to 1060-1140 DEG C from the room temperature within 60-70 minutes, and annealing for 30-60 minutes at the temperature of 1060-1140 DEG C; S4, introducing a gaseous carbon source into the system, and growing graphene on the surface of the metal substrate; and S5, after the growth is finished, naturally cooling the system to the room temperature; and taking out a sample. According to the method, the wrinkle-free graphene film with a plurality of additional layer crystal domains grows on the surface of a metal substrate by adjusting a hydrogen partial pressure factor in a chemical vapor deposition method. The formation of the additional layers weakens the van der Waals interaction between the graphene film and the substrate, so that the wrinkle-free graphene film can be obtained.

Description

technical field [0001] The invention belongs to the field of graphene material growth and relates to a method for preparing a wrinkle-free graphene film. Background technique [0002] Graphene is an ideal two-dimensional crystal composed of a single layer of carbon atoms. Since Professor Geim and Professor Novoselov stripped graphene in 2004, scientists have discovered that graphene has many excellent mechanical, optical and electrical properties, including high transmittance, high carrier mobility and high mechanical strength. Therefore, graphene has become an excellent material for preparing high-performance field-effect transistors, flexible displays and optoelectronic devices. These potential applications have promoted the development of various preparation technologies of graphene, especially the preparation of graphene by chemical vapor deposition. [0003] In recent years, graphene has been prepared by chemical vapor deposition on various transition metal substrates...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B32/186
CPCC01B32/186
Inventor 李军郭姿
Owner HEBEI UNIV OF TECH
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