A kind of two-component cleaning agent and its preparation method and application

Abstract

The invention provides a two-component cleaning agent and its preparation method and application, including A component and B component; wherein, based on the total mass of the A component as 100%, the A component includes the following components : Potassium hydroxide 1‑3%; surfactant 2‑5%; cosolvent 2‑5%; organic base 1‑3%; sodium gluconate 0.5‑1%; organic phosphate 0.5‑1%; Water; based on the total mass of the B component as 100%, the B component includes the following components: potassium hydroxide 3-18%; co-solvent 1-3%; the balance is water. The two-component cleaning agent provided by the invention has a cleaning ability equivalent to that of commercially available cleaning agents, and has a better effect on removing metal impurities.

Description

Technical field [0001] The present invention belongs to the field of cleaning agents, relates to a two-component cleaning agent and preparation method and application thereof, in particular to a two-component silicon wafer cleaning agent and preparation method and application thereof. Background [0002] Diamond wire cutting crystalline silicon is a new type of silicon wafer processing technology developed in recent years. Compared with sand wire cutting, it has significant cost advantages, mainly in terms of high cutting capacity, small environmental pollution, and less loss of sawn silicon material, and has developed into a mainstream slicing process. [0003] The appearance of the battery silicon wafer before use should be silver gray, and the presence of mezzanine, blackening, oxidation, fingerprints and other traces or impurities is not allowed, therefore, in the preparation process of high-efficiency monocrystalline silicon solar cells, in order to obtain high photoelectric...

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Problems solved by technology

CN101020866A discloses a solar silicon wafer cleaning agent, its components are by mass percentage, 10-30% sodium nitrilotriacetate complexing agent, 5-10% C 10 -C 13 Carbonyl isomer alcohol ethoxylate surfactant, 3-5% fatty alcohol alkoxylate surfactant, 0.05-2% hydroxide peroxide, 5-10% butyl glycol ether organic Solvent, 1-5% potassium hydroxide, the balance is deionized water or tap water; the cleaning agent provided by this patent does not contain toxic, harmful and polluting substances, but the removal effect of metal impurities is not good enough

CN107686779A discloses a semiconductor grinding disc cleaning agent and its preparation method, including 1-15% of surfactant, 3-5% of organic base, 2-10% of complexing agent, 3-10% of cosolvent and 60-80% of water %, the cleaning agent provided by this patent has simple operation and low cost for cleaning silicon wafers, but it still has the defect that the effect of removing metal impurities is not good

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