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Method for preparing sulfide semiconductor/metal nanoparticles based on sulfur vacancy defect and application of sulfide semiconductor/metal nanoparticles

A technology of metal nanoparticles and vacancy defects, applied in the field of photocatalysis, can solve problems such as cumbersome operation, semiconductor damage, and affecting photocatalytic performance

Active Publication Date: 2021-05-07
SHANGQIU NORMAL UNIVERSITY
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In order to solve the semiconductor ZnIn 2 S 4 In the process of depositing metal nanoparticles on the surface, it is necessary to add organic stabilizers, or additionally introduce strong light and sacrificial agents, which is cumbersome to operate and may cause certain damage to the semiconductor itself, affecting its photocatalytic performance. The present invention utilizes sulfide semiconductor The principle that the surface-rich defects can directly reduce metal ions, directly grow metal nanoparticles on the surface of sulfide semiconductors

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  • Method for preparing sulfide semiconductor/metal nanoparticles based on sulfur vacancy defect and application of sulfide semiconductor/metal nanoparticles
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  • Method for preparing sulfide semiconductor/metal nanoparticles based on sulfur vacancy defect and application of sulfide semiconductor/metal nanoparticles

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Embodiment Construction

[0026] In order to better illustrate the present invention and facilitate understanding of the technical solution of the present invention, the present invention will be further described in detail below.

[0027] The sulfide semiconductor ZnIn with sulfur vacancy defects 2 S 4 Prepared by the following method: with ZnCl 2 Zinc source, InCl 3 ZnIn is prepared by solvothermal method as the indium source, thioacetamide (TAA) as the sulfur source and the mixed solution of ethylene glycol and water as the reaction medium 2 S 4 Nanocatalyst: ZnCl 2 ∙4H 2 O, InCl 3 ∙4H 2 O and TAA were dissolved in the mixed solution of ethylene glycol and water, the ZnCl 2 ∙4H 2 O, InCl 3 ∙4H 2The molar ratio of O and TAA was 1:2:4, and the stirring was continued for 60 min. Then, it was transferred to a reactor and kept at 150 °C for 12 h. Wait for the reaction kettle to cool down to room temperature naturally, centrifuge and wash the obtained precipitate, and dry it in a vacuum oven ...

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Abstract

The invention discloses a method for preparing sulfide semiconductors / metal nanoparticles based on sulfur vacancy defects. The method comprises the following steps: (1) preparing turbid liquid of sulfide semiconductors with sulfur vacancies; (2) preparing a metal ion precursor solution; and (3) mixing the turbid liquid of the sulfide semiconductor with the sulfur vacancy defect with the metal ion precursor solution; wherein the sulfide semiconductor / metal nanoparticles prepared by the method are applied to the fields of photodegradation, water photolysis and photocatalytic reduction of carbon dioxide, and water photolysis is preferentially selected; according to the method, the metal ion precursor solution can be directly reduced by utilizing the defect reduction characteristic of sulfide, and the metal nanoparticles directly grow on the defect surface of the semiconductor, so that the effect of passivating the defect on the surface of the semiconductor is achieved; the metal nanoparticles deposited on the surface of the semiconductor can be in close interface contact with the semiconductor, the method is simple to operate, external energy is not required to be input, and the composite catalyst can be prepared only by stirring.

Description

technical field [0001] The invention belongs to the field of photocatalysis, and in particular relates to a method for preparing sulfide semiconductor / metal nanoparticles with sulfur vacancy defects and an application thereof. Background technique [0002] With the rapid development of economy, energy crisis and environmental pollution have become two major social problems that people face. Since 1972, Japanese scientists Fujishima and Honda discovered TiO 2 Since the electrode can decompose water to produce hydrogen under the irradiation of ultraviolet light, semiconductor photocatalysis technology has attracted more and more attention of scientific researchers, showing potential application prospects in the fields of environment and energy, and has become a research topic in countries all over the world. Hotspots are of great research significance. [0003] At present, for a single semiconductor photocatalyst, the recombination of photogenerated electrons and holes is re...

Claims

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Application Information

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IPC IPC(8): B01J27/04B01J23/50B01J23/52B01J35/08C01B3/04
CPCB01J27/04B01J23/50B01J23/52C01B3/042B01J35/23B01J35/51B01J35/39Y02E60/36
Inventor 李盼王军梅杨尚坤刘应敏王立晶瞿鹏
Owner SHANGQIU NORMAL UNIVERSITY
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