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Preparation method of composite laser crystal

A composite laser crystal and seed crystal technology, applied in crystal growth, chemical instruments and methods, single crystal growth, etc., can solve the problems of large composite interface, large loss, poor composite crystal interface bonding strength, etc., and achieve high interface bonding strength , good optical uniformity and optical quality, high quality results

Inactive Publication Date: 2021-05-14
北京雷生强式科技有限责任公司
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  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] For the above-mentioned large-interface composite laser crystal, due to the relatively large composite interface, especially the bonding of the composite interface with a curved surface shape may exist, there are problems such as poor bonding strength of the composite crystal interface, large loss, and macroscopic defects such as bubbles.

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  • Preparation method of composite laser crystal
  • Preparation method of composite laser crystal
  • Preparation method of composite laser crystal

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preparation example Construction

[0048] The preparation method of the composite laser crystal provided by the embodiment of the present invention is particularly suitable for preparing a composite laser crystal with a large interface composite structure, for example, a composite laser crystal with a planar waveguide structure, a composite laser crystal with a ring waveguide structure, and a composite laser crystal with a surface gain structure. Wait.

[0049] figure 1 A composite laser crystal with a planar waveguide structure is exemplified, which includes: two symmetrically arranged functional support layers 12 , and a gain medium layer 11 interposed between the two functional support layers 12 by bonding. Exemplarily, the functional support layer 12 is an undoped yttrium aluminum garnet crystal, and the gain medium layer 11 is a doped yttrium aluminum garnet crystal.

[0050] figure 2 A compound laser crystal with a ring waveguide structure is illustrated, which includes: an inner functional support lay...

Embodiment 1

[0105] Example 1: Preparation of Nd:YAG planar waveguide composite crystal

[0106] In the material selection sector of the Nd:YAG crystal blank with a doping concentration of 0.2at% grown by the pulling method, a Nd:YAG crystal slab with a width of 22mm, a thickness of 1mm, and a length of 85mm was selected, and the surface was finely ground and processed into 0.2mm×22mm×85mm seed crystal.

[0107] After cleaning the surface of the seed crystal, soak it with potassium dichromate washing solution for no less than 12 hours, and then wash it with H 2 SO 4 and H 2 o 2 It was prepared in a washing solution prepared at a volume ratio of 1:1, washed at a temperature of 95°C for 5 minutes, and then ultrasonically cleaned in deionized water for 30 minutes.

[0108] Prepare KOH to 3mol·L -1 The solution was used as a mineralizer solution, and 20 g of undoped YAG polycrystalline powder with a purity of 4N was used as a bonding material.

[0109] Put the bonding material in the hig...

Embodiment 2

[0112] Embodiment 2: Preparation of Yb:YAG planar waveguide composite crystal

[0113] In the material selection sector of the Yb:YAG crystal blank with a doping concentration of 5.0at% grown by the pulling method, a Yb:YAG crystal slab with a width of 32mm, a thickness of 1mm, and a length of 135mm was selected, and the surface was finely ground and processed into A seed crystal of 0.1mm×32mm×135mm.

[0114] After cleaning the surface of the seed crystal, soak it with potassium dichromate washing solution for no less than 12 hours, and then wash it with H 2 SO 4 and H 2 o 2 It was prepared in a washing solution prepared at a volume ratio of 1:1, washed at a temperature of 100°C for 5 minutes, and then ultrasonically cleaned in deionized water for 30 minutes.

[0115] At the same time, prepare a concentration of 3mol L -1 of NaOH and a concentration of 1mol L -1 The mixed solution of ammonia water was set aside, and 50 g of undoped YAG polycrystalline powder with a purit...

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Abstract

The invention discloses a preparation method of a composite laser crystal, and belongs to the field of laser crystals. The method comprises the steps that a seed crystal and a bonding raw material are provided, the seed crystal is used for forming a first layer of the composite laser crystal, the bonding raw material is used for forming a second layer of the composite laser crystal, one of the first layer and the second layer serves as a gain dielectric layer, and the other serves as a functional supporting layer; a reaction kettle is provided, a low-temperature area and a high-temperature area are arranged in the reaction kettle, the seed crystal is located in the low-temperature area, and the bonding raw material is located in the high-temperature area; and under the mineralizing agent solution atmosphere, the bonding raw material is dissolved and transferred to the bonding surface of the seed crystal through the mineralizing agent solution for growth, a second layer of the composite laser crystal is formed on the bonding surface of the seed crystal, and the prepared composite laser crystal is high in interface bonding strength, low in loss and high in optical quality.

Description

technical field [0001] The invention relates to the field of laser crystals, in particular to a preparation method of a composite laser crystal. Background technique [0002] Composite laser crystals are usually used to prepare high-power solid-state lasers, especially composite laser crystals with large interface composite structures, such as planar waveguide structure composite laser crystals, ring waveguide structure composite laser crystals, and surface gain structure composite laser crystals. The large-interface compound laser crystal has significant advantages such as good heat dissipation performance, uniform gain distribution, and waveguide transmission, which is conducive to achieving high-efficiency, high-power, and high-beam quality laser output for solid-state lasers. [0003] At present, the preparation methods of composite laser crystals provided by related technologies include: thermal diffusion bonding method, glue method, photoglue method, pulling growth met...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B33/06C30B33/02C30B29/28C30B7/14
CPCC30B7/14C30B29/28C30B33/02C30B33/06
Inventor 梁杰通李兴旺杨宇李湧江芦佳王永国
Owner 北京雷生强式科技有限责任公司
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