Preparation process of copper-based powder contact and relay formed by prepared contact
A copper-based powder, preparation process technology, applied in the direction of relays, electromagnetic relays, electromagnetic relay details, etc., can solve problems such as billet cracks, no cooling steps, etc.
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[0033]Example 1
[0034]Such asfigure 1 As shown, the prepared process of the copper-based powder contact includes the following steps: S1. Mixed powder: raw copper, raw material, raw material trioxide, raw material carbide, raw boron tungsten, raw material ruthenium, raw material Lanthan and raw graphite were finely grinded with a high energy ball mill. After the ball mill, the mixed powder I; filtration and drying: filtered the mixed powder I using a filtration device to obtain a filtered mixed powder II, and mixed powder II Drying under vacuum conditions; S3. One pressing: The mixed powder II is pressed into a blank ingot on a hydraulic machine having a pressure of 320 MPa. After the pressing pressure reaches 320 MPa, press 2 min; s4. Sintering: put the blank ingot into the protection Sintering at 800 ° C; S5. Cooling: A rare gas filled with 35 min (25 ° C) in the furnace in the furnace, then change the temperature of the rare gas filled into the furnace, so that the temperature is ...
Example Embodiment
[0040]Example 2
[0041]The difference between the present embodiment and the first embodiment is that the component is different in the component ingredients in the step S1 of the present embodiment, and the present embodiment is ingredients according to the following weight components: 1.8 parts of the raw material, three raw materials 1.3 parts of aluminum oxide, 2 raw material bonosa, 0.9 raw boronification, 0.1 parts of raw material, 0.07 raw materials, 3 raw graphite, 88 raw materials. In the first embodiment, the sintering temperature in step S4 is 900 ° C, and the initial pass in step S5 is inserted into a normal temperature duration of 40 min, and the secondary sintering temperature in step S7 is 500 ° C. The billet cracked rate comparison detection was performed using Example 1. The chip cracked rate of the billet of the present embodiment is less than 4.2%, which means that the present embodiment can significantly reduce the probability of crack after the billet is subjected...
Example Embodiment
[0042]Example 3
[0043]The difference between the present embodiment and the first embodiment is that the components are different when the weight component is performed in step S1 of the present embodiment, and the present embodiment is ingredients according to the following weight components: 3 parts of the raw material, three materials 0.5 different aluminum oxide, 0.5 raw material bonosa, 1.5 raw boron dihydrates, 0.05 raw materials, 0.1 parts of raw material, 2 raw graphite, 96 raw materials. The primary sintering temperature in the step S4 of this embodiment is 1000 ° C, and in the first time passing into the normal temperature duration of 30 min, the secondary sintering temperature is 550 ° C in step S7. The billet cracked rate comparison detection was carried out by the same manner as in Example 1. The granular cracked rate of the billet of the present embodiment is less than 4.4%, which will clearly, the present embodiment can significantly reduce the probability of crack aft...
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