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Preparation method of epitaxial growth lanthanum nickelate and lanthanum strontium manganese oxide film

A thin-film and epitaxy technology, used in oxide conductors, non-metallic conductors, liquid chemical plating, etc., can solve problems such as difficult to control metal salt hydrolysis, harsh conditions, and complex processes

Inactive Publication Date: 2021-06-01
SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The magnetron sputtering method is to bombard the target atoms with argon ions in a high vacuum chamber and then deposit them on the substrate to prepare a thin film. Form a gel-like network structure, and then spin-coat and anneal to form a thin film. This method is not easy to control the hydrolysis of the metal salt, and there are problems such as more cracks and poor orientation of the film.

Method used

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  • Preparation method of epitaxial growth lanthanum nickelate and lanthanum strontium manganese oxide film
  • Preparation method of epitaxial growth lanthanum nickelate and lanthanum strontium manganese oxide film
  • Preparation method of epitaxial growth lanthanum nickelate and lanthanum strontium manganese oxide film

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0056] NeO 3 / SrTiO 3 (100) Film preparation

[0057] Specifically include the following steps:

[0058] (1) Weigh 0.584g of polyethyleneimine and 0.584g of ethylenediaminetetraacetic acid and dissolve them in 20mL of deionized water, and stir evenly;

[0059] (2) Add 0.316g of lanthanum acetate and 0.249g of nickel acetate and stir to dissolve in the above solution, and continue to stir for 10h at room temperature to obtain a precursor solution;

[0060] (3) Spin the precursor solution on SrTiO at a spin-coating speed of 5000r / min 3 (100) Spin the glue on the single crystal substrate for 30s to form a wet film;

[0061] (4) After the spin coating is completed, place the sample in the corundum ark, heat it slowly at a rate of 1°C / min in an air atmosphere, raise the temperature to 510°C, keep it for 2 hours, and then heat it up to 700°C at a rate of 5°C / min for rapid sintering 2h, cooled with the furnace, and finally produced LaNiO 3 / SrTiO 3 (100) film.

[0062] The ob...

Embodiment 2

[0070] Compared with Example 1, the difference is that in step (3), the single crystal substrate is (110) oriented SrTiO 3 , the structure of its XRD detection is as figure 1 , it can be seen that it grows with the substrate orientation. The resistivity change curve with temperature is as follows: Figure 4 .

Embodiment 3

[0072] Compared with Example 1, the difference is that in step (3), the single crystal substrate is (111) oriented SrTiO 3 , the structure of its XRD detection is as figure 1 , it can be seen that it grows with the substrate orientation. The resistivity change curve with temperature is as follows: Figure 4 .

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Abstract

The invention relates to a preparation method of an epitaxial growth lanthanum nickelate and lanthanum strontium manganese oxide film. The chemical composition of the prepared epitaxial conductive oxide film is LaNiO3 or La0. 7Sr0. 3MnO3. The preparation method comprises the steps that a precursor solution containing a soluble high-molecular polymer, a solvent, a small-molecular complexing agent and metal salt is prepared, wherein the metal salt comprises lanthanum salt, nickel salt, strontium salt and manganese salt in a molar ratio corresponding to the chemical composition of the epitaxial conductive oxide film; and the surface of a substrate is coated with the precursor solution, after the substrate coated with the precursor solution is presintered at a temperature higher than 350 DEG C and lower than 500 DEG C, the temperature is increased to 600-900 DEG C to achieve sintering, and the epitaxial conductive oxide film is obtained.

Description

technical field [0001] The invention relates to a preparation method of a conductive oxide thin film material, in particular to a preparation method of epitaxial growth of lanthanum nickelate and lanthanum strontium manganese oxide thin film. Background technique [0002] Ferroelectric thin films have important application prospects in the fields of microelectronics and optoelectronics due to their good properties such as ferroelectricity, piezoelectricity, pyroelectricity, electro-optic and nonlinear optical effects. The bottom electrode of the ferroelectric film is generally made of Pt, because of its strong conductivity and good chemical stability, but the ferroelectric film using it as the bottom electrode is prone to aging, fatigue, etc. after many times of long-term polarization reversal. question. It has been found that conducting oxides with a perovskite structure, such as lanthanum nickelate (LaNiO 3 ), lanthanum strontium manganese oxide (La 0.7 Sr 0.3 MnO 3 )...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C18/12H01B1/08
CPCC23C18/1216H01B1/08
Inventor 王根水杨柱郭少波董显林
Owner SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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