Scanning electron microscope direct-writing photoetching system based on flexible nano servo motion system

Abstract

The invention discloses a scanning electron microscope direct-writing photoetching system based on a flexible nano servo motion system. The scanning electron microscope direct-writing photoetching system comprises an electron chamber, an ion chamber, a sample chamber and a control system; the electron chamber comprises an electron chamber cavity, an electron gun, an anode, an electron beam blocker, an electromagnetic lens and an electron beam deflection coil; the ion chamber comprises an ion chamber cavity, an ion source, an ion beam scanning deflection electrode and the like; the sample chamber comprises a sample chamber cavity, a secondary electron detector, a nano-precision flexible servo motion platform system and the like; the control system comprises a computer, an electron beam scanning controller, an ion beam scanning controller and the like. The electron beam generated by the electron chamber or the ion beam generated by the ion chamber can be used for nano direct-writing preparation, and the nano-precision flexible motion platform in the sample chamber and the electron beam / ion beam can cooperatively move or be linked, so that splicing errors in preparation are avoided, and large-area nano direct-writing photoetching without splicing errors is realized. The system can also perform in-situ detection in the preparation process, so that the preparation result is convenient to observe in real time.

Description

technical field [0001] The invention relates to the field of direct writing preparation of semiconductor integrated circuits, in particular to a scanning electron microscope direct writing photolithography system based on a flexible nanometer servo motion system. Background technique [0002] At present, photolithography is the main way to achieve nanofabrication. The characteristic scale of lithography is mainly limited by the wavelength of the light source, and it is relatively difficult to achieve ten-nanometer-scale fabrication through lithography. General electron beam and ion beam lithography has the following characteristics: the preparation line width can reach several nanometers; it has a very limited writing field (about 100 microns); if it is necessary to prepare large-area nanoscale patterns, it needs to be manually or through steps. The input motor drives the sample to move, and the preparation is performed one by one; there is a large splicing error between di...

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Problems solved by technology

[0004] The above-mentioned electron beam lithography machine has the following defects: 1) photolithography mask is required, and the preparation cost is high; 2) in-situ measurement cannot be performed; 3) the writing field is small, and it is difficult to realize large-area preparation; 4) preparation of different writing fields stitching errors

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