Preparation method of boron-doped diamond electrode with mesh cage multilayer structure
A technology of diamond electrode, multi-layer structure, applied in the direction of chemical instruments and methods, lamination, coating, etc.
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Embodiment 1
[0030]First, TiNb metal mesh and boron-doped diamond micropowder with a particle size of 50 μm are alternately placed layer by layer. The diamond powder and TiNb metal mesh were processed by high temperature and high pressure forming at a pressure of 200 MPa and a temperature of 1200 °C for 3 h. Next, a boron-doped diamond protective layer is deposited on the upper side of the composite electrode by microwave plasma chemical vapor deposition technology to enhance the strength of the multi-channel sandwich structure diamond electrode. Make sure the deposition temperature is about 780°C. using CH 4 :H 2 =7% CH 4 Nucleation for 2 h followed by reduction of CH 4 ratio to 5% for diamond growth while introducing boron source of H 2 The proportion is 5% of the total pure hydrogen gas flow. And the lower surface of the composite electrode is again grown with a boron-doped diamond layer with the same roughness as the upper surface by the above-mentioned process. Afterwards, the...
Embodiment 2
[0032] Firstly, TiNb metal mesh and boron-doped diamond micropowder with a particle size of 100 μm are alternately placed layer by layer. The diamond powder and TiNb metal mesh were processed by high temperature and high pressure forming at a pressure of 300 MPa and a temperature of 1300 °C for 4 h. Next, a boron-doped diamond protective layer is deposited on the upper side of the composite electrode by microwave plasma chemical vapor deposition technology to enhance the strength of the multi-channel sandwich structure diamond electrode. Make sure the deposition temperature is about 820°C. using CH 4 :H 2 =9% CH 4 Nucleation for 1 h, followed by reduction of CH 4 ratio to 3% for diamond growth while introducing boron source of H 2 The proportion is 5% of the total pure hydrogen gas flow. And the lower surface of the composite electrode is again grown with a boron-doped diamond layer with the same roughness as the upper surface by the above-mentioned process. After that...
Embodiment 3
[0034] Firstly, TiNb metal mesh and boron-doped diamond micropowder with a particle size of 1 μm were alternately placed layer by layer. The diamond powder mixed with the pre-graphite powder and the TiNb metal mesh were processed by high temperature and high pressure molding at a pressure of 150 MPa and a temperature of 1000 °C for 5 h. Then, a boron-doped diamond protective layer is deposited on the upper side of the composite electrode by DC arc plasma chemical vapor deposition technology to enhance the strength of the multi-channel sandwich structure diamond electrode. Make sure the deposition temperature is about 800°C. using CH 4 :H 2 =7% CH 4 Nucleation for 2 h followed by reduction of CH 4 ratio to 5% for diamond growth while introducing boron source of H 2 The proportion accounts for 10% of the total pure hydrogen gas flow. And the lower surface of the composite electrode is again grown with a boron-doped diamond layer with the same roughness as the upper surfac...
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