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Mesa PiN diode and production method, and silicon-based reconfigurable stealth antenna

A diode and mesa technology, used in antennas, radiating element structures, semiconductor/solid-state device manufacturing, etc., can solve problems such as poor distribution uniformity, low carrier concentration, and large electrode ratio, and achieve large and good breakdown voltage. The effect of device performance and practicability

Pending Publication Date: 2021-06-18
ENG UNIV OF THE CHINESE PEOPLES ARMED POLICE FORCE
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, at present, the carrier concentration inside the PiN diode is low and the distribution uniformity is poor, the proportion of electrodes in the diode is large, and the solid-state plasma region has little influence on the microwave radiation characteristics of the PiN diode, which limits its application in various reconnaissance, early warning and Applications in anti-radar, helicopter antenna, microwave communication antenna with high signal-to-noise ratio, etc.

Method used

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  • Mesa PiN diode and production method, and silicon-based reconfigurable stealth antenna
  • Mesa PiN diode and production method, and silicon-based reconfigurable stealth antenna
  • Mesa PiN diode and production method, and silicon-based reconfigurable stealth antenna

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Embodiment 1

[0054] See figure 1 , figure 1 It is a flow chart of a method for preparing a mesa PiN diode according to an embodiment of the present invention. This method is suitable for preparing a mesa PiN diode with a GaAs-GeSn-GaAs heterostructure, and the diode is mainly used for making silicon-based reconfigurable stealth Antenna, the method includes the steps of:

[0055] (a) select a GeOI substrate, and dope in the GeOI substrate to form a top GeSn region;

[0056] (b) forming the active region of the mesa;

[0057] (c) forming a P region and an N region by in-situ doping;

[0058] (d) forming GeSn alloy leads on the substrate to complete the preparation of the mesa PiN diode with GaAs-GeSn-GaAs heterostructure.

[0059] Wherein, for step (a), the reason for doping the top layer GeSn region in the GeOI substrate is that, for the silicon-based solid-state plasma antenna, since it requires good microwave characteristics, its radiating unit diode needs to have a high concentration...

Embodiment 2

[0098] See Figure 2a-Figure 2t , Figure 2a-Figure 2t It is a schematic diagram of a preparation method of a mesa PiN diode according to an embodiment of the present invention. On the basis of the first embodiment above, the preparation of a mesa PiN diode with a GaAs-GeSn-GaAs heterostructure with a solid-state plasma region length of 120 microns is For example, the length of the intrinsic region can be between 50 microns and 150 microns, and the specific steps are as follows:

[0099] S10, selecting a GeOI substrate.

[0100] See Figure 2a , the crystal orientation of the GeOI substrate 101 is (110), in addition, the doping type of the GeOI substrate 101 is p-type, and the doping concentration is 5×10 14 cm -3 , the thickness of the top layer Ge is 50 μm.

[0101] S20, doping into the GeOI substrate to form a top-layer GeSn region.

[0102] See Figure 2b , the specific method may be: photoetching the GeOI substrate, doping the GeOI substrate with Sn composition, so...

Embodiment 3

[0140] See image 3 , image 3 It is a schematic diagram of the device structure of a mesa PiN diode according to an embodiment of the present invention, and the PiN diode adopts the above-mentioned figure 1 prepared as indicated.

[0141] Specifically, the mesa PiN diode is prepared and formed on a GeOI substrate 301, and the P region 303, the N region 304 of the PiN diode and the intrinsic region laterally located between the P region 303 and the N region 304 are all located on the substrate within the top GeSn region 302 .

[0142] The invention discloses a mesa PiN diode, a preparation method and a silicon-based reconfigurable stealth antenna. A mesa structure is introduced into the PiN diode to change the structure of the active region, and specifically adjusts the ratio of the P region and the N region relative to the intrinsic region. The position reduces the proportion of the electrode in the diode, and greatly improves the influence of the solid-state plasma region...

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Abstract

The invention relates to a mesa Pi N diode and a production method, and a silicon-based reconfigurable stealth antenna. The production method comprises the steps: selecting a GeOI substrate, and carrying out the doping in the GeOI substrate to form a top GeSn region; forming an active region of the mesa; forming a P region and an N region by using in-situ doping; and forming a GeSn alloy lead on the substrate so as to complete the production of the mesa PiN diode with a GaAs-GeSn-GaAs heterostructure. According to the PiN diode, the proportion of the electrodes in the diode is reduced, the influence of a solid-state plasma area on the microwave radiation characteristic of the PiN diode is greatly improved, in-situ doping is adopted, the adverse influence caused by ion implantation and other modes can be avoided, the doping concentration of materials can be controlled by controlling a gas flow, and a steep doping interface can be obtained so that better device performance can be obtained.

Description

technical field [0001] The invention relates to the technical field of semiconductor materials and device manufacturing, in particular to a mesa PiN diode, a preparation method and a silicon-based reconfigurable stealth antenna. Background technique [0002] Silicon-based silicon-based reconfigurable stealth antenna is a cross-field product based on the microwave characteristics of PiN diodes and realizes the electromagnetic radiation function of antennas. It is an important driving force to promote the development of modern communications in the direction of integrated multi-function. The reconfigurable function of the antenna can change the length and shape of the plasma channel with radiation function by controlling the on and off of the diode array units in different conductor regions, so as to realize the dynamic reconfiguration of the antenna radiation performance. When the antenna is not working, there is no high-concentration carrier inside the diode, and the intrins...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/868H01L21/329H01L23/66H01Q1/36H01Q23/00
CPCH01L29/868H01L29/6609H01L23/66H01Q1/36H01Q23/00
Inventor 苏汉胡健生
Owner ENG UNIV OF THE CHINESE PEOPLES ARMED POLICE FORCE
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