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High-viscosity perovskite quantum dot conductive ink and preparation method thereof

A technology of conductive ink and quantum dots, applied in the field of material engineering, can solve the problems of poor phase stability of all-inorganic quantum dots, affecting the electronic coupling of quantum dots, unfavorable application of optoelectronic devices, etc., and achieves good charge transport properties, simple process and low cost. Effect

Inactive Publication Date: 2021-06-22
SUZHOU UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

At present, most perovskite quantum dot sols or conductive inks are thickened by organic additives or auxiliary agents. These organic additives affect the charge coupling between quantum dots to a certain extent, resulting in charge transport in optoelectronic devices. , such as the Chinese invention patent CN108165259A discloses a preparation method of an all-inorganic perovskite quantum dot sol, in which an acrylic oligomer is added to the synthesis, although a relatively viscous quantum dot sol can be obtained, but it seriously affects the quantum dot sol. The electronic coupling between dots is extremely unfavorable for the application of optoelectronic devices; in addition, the phase stability of all-inorganic quantum dots is poor, and they are easily affected by air humidity and undergo irreversible phase transitions.

Method used

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  • High-viscosity perovskite quantum dot conductive ink and preparation method thereof
  • High-viscosity perovskite quantum dot conductive ink and preparation method thereof
  • High-viscosity perovskite quantum dot conductive ink and preparation method thereof

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Effect test

Embodiment 1

[0025] Synthesis of FAPbI by Thermal Injection Method According to the Prior Art 3 Quantum dots were prepared into a 70 mg / mL n-octane solution, sealed and placed in an air environment with a temperature of 25 °C and a relative humidity of 30%, and left to stand for 7 days to obtain FAPbI 3 Quantum dot conductive ink.

[0026] See attached figure 1 , which is the FAPbI provided by this example 3 Physical photo of quantum dot conductive ink, (a) The picture shows the upright FAPbI 3 Quantum dot conductive ink, (b) The picture shows the inverted FAPbI 3 Quantum dot conductive ink, the picture shows that the prepared conductive ink has high viscosity.

[0027] See attached figure 2 , which is the FAPbI provided by this example 3 TEM image of quantum dot conductive ink;

[0028] See attached image 3 , which is the FAPbI provided by this example 3 XRD pattern of quantum dot conductive ink;

[0029] See attached Figure 4 , which is the fluorescence emission spectrum fi...

Embodiment 2

[0031] FAPbI was synthesized separately by hot injection method 3 and CsPbI 3 Quantum dots were prepared into 70 mg / mL n-hexane solution; FAPbI was mixed at a volume ratio of 1:3 3 and CsPbI 3 The quantum dot solution was fully mixed for about 30 minutes, and the A-site cation exchange was carried out to prepare alloy quantum dots; sealed and placed in a dry box at 40 °C, and left to stand for 5 days, the prepared (FACs)PbI 3 Quantum dot conductive ink.

[0032] See attached Figure 5 , is the fluorescence emission spectrum diagram of the conductive ink prepared in this embodiment.

Embodiment 3

[0034] Synthesis of FAPbI by thermal injection 3 and CsPbBr 3 Quantum dots were prepared into 70 mg / mL and 50 mg / mL chloroform solutions respectively, and the two were fully mixed at a ratio of 1:3 for about 30 minutes, and the A and X positions were exchanged for cations and anions to prepare alloy quantum dots; sealed and placed In the air environment of 20 ℃, after standing for 240 hours, the prepared (FACs)Pb(IBr) 3 Quantum dot conductive ink.

[0035] See attached Figure 6 , is the fluorescence emission spectrum diagram of the conductive ink prepared in this embodiment.

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Abstract

The invention provides high-viscosity perovskite quantum dot conductive ink and a preparation method thereof. Based on perovskite quantum dots of which the chemical formula is of an ABX3 structure, the preparation method is characterized by comprising the following steps: dissolving the perovskite quantum dots in an alkyl or aryl solvent to prepare a solution with the concentration of 40-100 mg / mL, standing for 100-700 hours at the temperature of 10-100 DEG C, removing supernate, and concentrating to obtain the high-viscosity perovskite quantum dot conductive ink. The quantum dots can form an alloy through ion exchange, so that the spectrum coverage width of the quantum dot conductive ink provided by the invention can reach 400-800 nm; meanwhile, the quantum dot conductive ink provided by the invention has the characteristics of high air stability, simple preparation and low cost, can be used for blade coating film formation or 3D direct writing printing of flexible optoelectronic devices, and has an extremely high application prospect.

Description

technical field [0001] The invention belongs to the technical field of material engineering, and in particular relates to a high-viscosity perovskite quantum dot conductive ink and a preparation method thereof. Background technique [0002] Perovskite materials are widely used in the field of optoelectronic devices, such as photovoltaics, light-emitting displays, detection sensing and catalysis, due to their unique advantages such as high light absorption coefficient, long exciton lifetime, low exciton binding energy and long carrier diffusion length. Wait. Due to quantum confinement and quantum size effects, perovskite quantum dots can adjust the fluorescence position through size regulation; in addition, perovskite quantum dots have high fluorescence quantum yield (PLQY) and narrow fluorescence peak width, Therefore, it is widely used in the field of luminescence. Compared with perovskite thin films, perovskite quantum dots (or nanocrystals) have the decoupling of film f...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09D11/52
CPCC09D11/52
Inventor 马万里张旭良袁建宇李有勇
Owner SUZHOU UNIV
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