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Method to optimize atomic layer deposition

An atomic layer deposition method, atomic layer deposition technology, applied in the direction of coating, gaseous chemical plating, metal material coating process, etc., can solve the problem of poor water and gas barrier properties, limited improvement of gas barrier properties, color changes, etc. question

Active Publication Date: 2021-06-22
BENQ MATERIALS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, due to the large Si-O-Si bond angle in silica gel, the water vapor barrier properties of the silica gel film are poor, and it is easy to cause the phosphor or quantum dot (Quantum dot) in the LED to change color or light due to moisture. decline
Although it is known that increasing the cross-linking density of silica gel or adding nanoparticles can increase the water and gas barrier properties of silica gel, but the aforementioned methods have a limited effect on improving the gas barrier properties.
In addition, due to the large coefficient of thermal expansion (CTE) of silica gel, large thermal stress will be generated in the atomic layer deposition process for forming inorganic thin films, and cracks or wrinkles are prone to occur when plating inorganic coating layers, resulting in The gas barrier property of the silicone film of the gas barrier film decreases
In addition, because the surface of silica gel does not have hydrophilic functional groups such as -OH, -NH, -COOH required for atomic layer deposition, and has high hydrophobicity, the coating rate and coating film prepared by atomic layer deposition method The quality is poor, and it is not easy to obtain a dense and flat inorganic coating on the surface of silica gel

Method used

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  • Method to optimize atomic layer deposition

Examples

Experimental program
Comparison scheme
Effect test

preparation example 1

[0049] Preparation Example 1: The preparation method of linear polysiloxane (Compound A)

[0050]3499.92 grams (19.13 mole) of methylphenyl dimethoxysilane (phenylmethyldimethoxysilane, purchased from Hengqiao Industrial Co., Ltd., Taiwan), 288.48 grams (2.4 mole) of dimethyldimethoxysilane (Dimethyldimethoxysilane, Purchased from Hengqiao Industrial Co., Ltd., Taiwan), and 317.28 grams (2.4mole) of methylvinyldimethoxysilane (Methylvinyldimethoxysilane, purchased from Liuhe Chemical Co., Ltd., Taiwan) was added to the reaction tank and Stir at room temperature to form a homogeneous mixed solution. This mixed solution is dripped in the sulfuric acid aqueous solution (5337.4 grams) of concentration 5% to obtain a reaction solution, then this reaction solution is heated to 75 ℃ to carry out hydrolysis, after the reaction is complete, extract with deionized water to make the organic layer reach neutral. properties, and finally the solvent is removed to obtain a hydrolyzate.

[...

preparation example 2

[0052] Preparation example 2: the preparation method of the first silicone resin (compound B)

[0053] 2776 grams (14 mole) of phenyl-trimethoxysilane (phenyl-trimethoxysilane, purchased from Liuhe Co., Ltd., Taiwan), 480.88 grams (4 mole) of dimethyldimethoxysilane (Dimethyldimethoxysilane, purchased from Hengqiao Industrial Co., Ltd., Taiwan), and 264.46 grams (2mole) of methylvinyldimethoxysilane (Methylvinyldimethoxysilane, purchased from Liuhe Chemical Co., Ltd., Taiwan) is placed in the reaction tank, stirred at room temperature to prepare Mix the solution evenly. Drop the mixed solution into 5% sulfuric acid aqueous solution to prepare a reaction solution, then heat the reaction solution to 75°C for hydrolysis, after the reaction is complete, extract with deionized water to make the organic layer neutral, and finally The solvent was removed to give the monohydrolyzate.

[0054] The above-mentioned hydrolyzate, 21.39 grams (0.11 mole) of divinyltetramethyldisiloxane (D...

preparation example 3

[0055] Preparation example 3: the preparation method of the second silicone resin (compound C)

[0056] With 2379.4 grams (12 mole) of phenyl trimethoxysilane (Phenyltrimethoxysilane, purchased from Liuhe Chemical Co., Ltd., Taiwan), and 1118.4 grams (6 mole) of divinyltetramethyldisiloxane (Divinyltetramethyldisiloxane, purchased from Liuhe Chemical Co., Ltd., Taiwan) was placed in a reaction tank and stirred at room temperature to obtain a uniform mixed solution. This mixed solution was dripped into 5% sulfuric acid aqueous solution (4547.16 grams) to prepare a reaction solution, and then the reaction solution was heated to 75°C for hydrolysis, and after the reaction was complete, it was extracted with deionized water to make The organic layer was neutralized, and finally the solvent was removed to obtain a hydrolyzate.

[0057] The above-mentioned hydrolyzate, 1998 grams of toluene and 10 grams of potassium hydroxide were placed in a reaction tank, nitrogen gas was introdu...

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Abstract

The disclosure provides a method to optimize atomic layer deposition comprising the following steps: (A) providing a cellulose nanofiber; (B) acidifying the cellulose nanofiber by an acidifying treatment agent; (C) hydrophobing the acidified cellulose nanofiber by a hydrophobinghydrophobic treatment agent; (D) dissolving the acidified and hydrophobed cellulose nanofiber in a solvent to form a cellulose nanofiber solution; (E) coating the cellulose nanofiber solution on a silicone resin film; (F) heating the coated silicone resin film to form a cellulose nanofiber layer on a surface of the silicone resin film; and (G) forming an inorganic coating layer on the surface of the silicone resin film having the cellulose nanofiber layer by atomic layer deposition.

Description

technical field [0001] The present invention relates to a method for optimizing atomic layer deposition, which can improve the coating quality of the inorganic coating layer on silica gel, especially a method of modifying the surface of silica gel by using cellulose nanofibers to improve the coating quality of the inorganic coating layer on silica gel Methods. Background technique [0002] Compared with traditional lighting, Light Emitting Diode (LED) has the advantages of small size, high luminous efficiency, long life, high safety, fast operation response time, rich colors, no heat radiation and no mercury and other toxic substances. , so it is currently booming rapidly. Its applications are quite diverse, such as architectural lighting, consumer hand-held lighting, retail display lighting, residential lighting and so on. [0003] A general LED packaging structure includes a bracket, an LED chip disposed on the bracket, and packaging glue. However, the existing gas barr...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/02C23C16/455C23C16/40H01L33/56
CPCC23C16/0272C23C16/02C23C16/45525C23C16/40H01L33/56C08J7/048C08J2383/07C08J2401/02C23C16/403C08J7/0423C23C16/45553
Inventor 邓仕杰黄如慧
Owner BENQ MATERIALS CORP
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