Silicon carbide/graphene bionic laminated coating and preparation method thereof
A silicon carbide layer and graphene layer technology, applied in the field of silicon carbide/graphene bionic laminated coating and preparation, can solve the problems of unfavorable coating oxidation resistance, accelerated coating failure process, insufficient dense coating, etc. Excellent anti-oxidation performance, increased fracture work, uniform and dense coating effect
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment 1
[0028] 1) The density is 1.7g / cm 3 The two-dimensional C / C composite material is used as the matrix, and a sample with a size of 10mm×10mm×10mm is cut from the C / C composite material, polished with 400 mesh SiC sandpaper, then ultrasonically cleaned with ethanol, and placed in a temperature of 70 Dry in an oven at ℃ for 4 h.
[0029] 2) Hang the C / C substrate in the deposition area of the vertical resistance furnace, vacuumize to -0.095Mpa, pass Ar as the protective gas, and raise the furnace temperature to 1000°C at a heating rate of 5°C / min. When the temperature reaches the deposition temperature, dilute Ar and react H 2 , and then open the carrier gas H 2 Methyltrichlorosilane (MTS) is brought into the reaction zone for deposition, and the gas flow control range during this process is: dilute Ar: 300 sccm, react H 2 : 2L / min, carrier gas H 2 : 30sccm; the deposition time is 2h, after the deposition is completed, stop feeding the reaction gas, turn off the heating powe...
Embodiment 2
[0033] 1) The density is 1.7g / cm 3 The two-dimensional C / C composite material is used as the matrix, and a sample with a size of 10mm×10mm×10mm is cut from the C / C composite material, polished with 400 mesh SiC sandpaper, then ultrasonically cleaned with ethanol, and placed in a temperature of 70 Dry in an oven at ℃ for 4 h.
[0034] 2) Hang the C / C substrate in the deposition area of the vertical resistance furnace, evacuate to -0.095Mpa, pass Ar as the protective gas, and raise the furnace temperature to 1100°C at a heating rate of 5°C / min. When the temperature reaches the deposition temperature, dilute Ar and react H 2 , and then open the carrier gas H 2 Methyltrichlorosilane (MTS) is brought into the reaction zone for deposition, and the gas flow control range during this process is: dilute Ar: 300 sccm, react H 2 : 0.5L / min, carrier gas H 2 : 10sccm; the deposition time is 4h, after the deposition, stop feeding the reaction gas, turn off the heating power supply to ...
Embodiment 3
[0038] 1) The density is 1.7g / cm 3 The two-dimensional C / C composite material is used as the matrix, and a sample with a size of 10mm×10mm×10mm is cut from the C / C composite material, polished with 400 mesh SiC sandpaper, then ultrasonically cleaned with ethanol, and placed in a temperature of 70 Dry in an oven at ℃ for 4 h.
[0039] 2) Hang the C / C substrate in the deposition area of the vertical resistance furnace, evacuate to -0.095Mpa, pass Ar as the protective gas, and raise the furnace temperature to 1200°C at a heating rate of 5°C / min. When the temperature reaches the deposition temperature, dilute Ar and react H 2 , and then open the carrier gas H 2 Methyltrichlorosilane (MTS) is brought into the reaction zone for deposition, and the gas flow control range during this process is: dilute Ar: 600 sccm, react H 2 : 1.5L / min, carrier gas H 2 : 20sccm; deposition time is 2h. After the deposition, stop feeding the reaction gas, turn off the heating power supply to coo...
PUM
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com