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A kind of cobalt-based multilayer film and preparation method thereof

A multi-layer film, cobalt-based technology, applied in coating, metal material coating process, vacuum evaporation plating, etc., can solve the problem of damage to perpendicular magnetic anisotropy, achieve increased range and controllability, and simple process , low cost effect

Active Publication Date: 2022-04-08
JIHUA LAB
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Annealing will cause interatomic diffusion of nano-film materials, such as atomic diffusion between Co / Pt films, which will damage the perpendicular magnetic anisotropy

Method used

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  • A kind of cobalt-based multilayer film and preparation method thereof
  • A kind of cobalt-based multilayer film and preparation method thereof

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preparation example Construction

[0034] Based on the same inventive concept, the present application also provides a method for preparing a cobalt-based multilayer film, comprising the following steps:

[0035] S1. Provide a base;

[0036] S2. Prepare a first covering layer on one side of the substrate;

[0037] S3, preparing a nitrogen-doped tungsten layer on the side of the first covering layer away from the substrate;

[0038] S4, preparing a Co-based soft magnetic layer on the side of the nitrogen-doped tungsten layer away from the substrate;

[0039] S5, preparing a second covering layer on the side of the base of the Co-based soft magnetic layer.

[0040] In some embodiments, the nitrogen-doped tungsten layer is prepared by magnetron sputtering method in S3, wherein the magnetron sputtering method is specifically: using argon as the sputtering gas, using W as the sputtering target, The nitrogen gas is fed into the target at the same time, and the nitrogen gas flow is stopped after the deposition is c...

Embodiment 1

[0052] A cobalt-based multilayer film, which includes a Si substrate and a first covering layer, a nitrogen-doped tungsten layer, a Co-based soft magnetic layer, and a second covering layer sequentially positioned on one side of the Si substrate, wherein the material of the first covering layer is Ta, the thickness of the first covering layer is 2nm, the thickness of the nitrogen-doped tungsten layer is 3nm, the material of the Co-based soft magnetic layer is Co, the thickness of the Co-based soft magnetic layer is 1nm, and the material of the second covering layer is Pt , the thickness of the second covering layer is 2nm.

[0053] Specifically, the preparation method of the cobalt-based multilayer film comprises the following steps:

[0054] S1, providing a Si substrate;

[0055] S2. Using Ta as the target, Ta is prepared on one side of the Si substrate by magnetron sputtering, which is the first covering layer; wherein, the sputtering power of the Ta target is 120W, and the...

Embodiment 2

[0060] The structure and preparation method of the cobalt-based multilayer film provided in the embodiment of the present application are the same as in the embodiment 1, except that the flow ratio of nitrogen gas and argon gas is 4:16.

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Abstract

The invention provides a cobalt-based multilayer film and a preparation method thereof. The cobalt-based multilayer film comprises: a substrate, a first covering layer sequentially located on one side of the substrate, a nitrogen-doped tungsten layer, a Co-based soft magnetic layer and a second Two covering layers. The present invention also provides a method for preparing the cobalt-based multilayer film, which induces changes in the interface structure by selecting nitrogen atoms as orbital hybrid objects with ferromagnetic metals, without subsequent vacuum annealing treatment, through the Co ‑N orbital hybrid engineering to adjust the orbital structure at the ferromagnetic metal interface to obtain a beneficial and moderate Co‑N orbital hybrid state, which makes the interface present different degrees of orbital hybrid state, increasing the adjustment range and Controllability, thereby causing changes in the magnetic properties of Co-based multilayer films.

Description

technical field [0001] The invention relates to the technical field of magnetic materials and information storage, in particular to a cobalt-based multilayer film and a preparation method thereof. Background technique [0002] In recent years, with the rapid development of the information industry, the requirements for the information storage industry are also constantly increasing. Ferromagnetic thin films with perpendicular magnetic anisotropy (PMA) are the core materials for constructing magnetic random access memory devices, and have attracted extensive research interest due to their advantages such as high magnetic anisotropy, low switching current density and high thermal stability. Obtaining controllable and high perpendicular magnetic anisotropy has become a key issue in constructing memory devices with high storage speed, low power consumption and high storage density. Therefore, it is necessary to continuously improve the magnetic anisotropy of materials commonly ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/35C23C14/18C23C14/00
CPCC23C14/35C23C14/18C23C14/0036
Inventor 徐秀兰于广华冯春滕蛟黄意雅
Owner JIHUA LAB
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