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Metal ditelluride nanosheet and preparation method thereof

A technology of telluride and nanosheets, which is applied in the field of nanomaterials, can solve the problems of easily damaged material crystallinity and metering ratio, the inability to obtain two-dimensional structures, and low yield of nanosheets, and achieve excellent electrical properties, process controllable, The effect of simple method

Pending Publication Date: 2021-07-13
UNIV OF SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

At present, the traditional top-down method in the solution phase exfoliation method, especially the ultrasonic exfoliation, due to the high power density, the energy when the center of the bubble bursts is large. In addition to breaking the interlayer van der Waals force of the layered material, it can also destroy the in-plane chemical bonds, so the obtained nanosheets have the problems of low yield and small size, which are not suitable for large-scale production of ultra-thin two-dimensional materials, especially two-dimensional structures with large size and high quality; chemical exfoliation can be used in transition metal sulfides and selenides obtained higher yields
However, for tellurides, the conventional chemical intercalation stripping method, due to the strong reactivity between metal ditelluride and intercalation molecules, is easy to destroy the crystallinity and stoichiometric ratio of the material. The corresponding two-dimensional structure

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  • Metal ditelluride nanosheet and preparation method thereof
  • Metal ditelluride nanosheet and preparation method thereof
  • Metal ditelluride nanosheet and preparation method thereof

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[0035] The invention provides a method for preparing ditelluride nanosheets, comprising: S1) under high pressure conditions, mixing and reacting metal ditelluride crystals, alkali metal salts and aprotic solvents to obtain intermediates inserted with alkali metal ions; S2) Exfoliating the intermediate intercalated with alkali metal ions in a protic solvent to obtain ditelluride nanosheets.

[0036] The present invention has no special limitation on the sources of all raw materials, which can be commercially available.

[0037]Wherein, the metal ditelluride crystal is preferably a metal ditelluride layered crystal, and more preferably the metal ditelluride crystal is a graphene-like layered crystal; the metal ditelluride crystal is preferably a group IVB transition metal ditelluride One or more of compound crystals, VB group transition metal ditelluride crystals and VIB group transition metal ditelluride crystals, more preferably TiTe 2 、ZrTe 2 , NbTe 2 、TaTe 2 、MoTe 2 wit...

Embodiment 1

[0054] Large size single layer WTe 2 Exfoliation Preparation of Nanosheets

[0055] Put metal W, Te element and bromine element with a molar ratio of 1:2 into a quartz tube with a diameter of 1 cm and a length of 20 cm, and seal it after vacuumizing; the ratio of the amount of bromine element added to the metal to Te element substance is 5 mg: 1ml; place the sealed quartz tube in a muffle furnace at 900°C for 200 hours at a high temperature, and then naturally cool to room temperature to obtain WTe 2 single chip.

[0056] Add 100mg WTe to a 200ml sealable reactor 2 Single wafer and 40ml n-hexane, then add 3ml butyllithium n-hexane solution (25%), seal and react for 5 hours under low temperature (wherein the temperature is 60°C, pressure is 1.0MPa), take out the precipitated sample, you can get the plug layer intermediate; then put the intercalation intermediate in deionized water, and vibrate rapidly for 5s (vibration speed is not required) to obtain a well-dispersed large-...

Embodiment 2

[0066] Large size single layer MoTe 2 Exfoliation Preparation of Nanosheets

[0067] Put metal Mo and Te elemental substance and bromine elemental substance with a molar ratio of 1:2 into a quartz tube with a diameter of 1 cm and a length of 20 cm, and seal it after vacuuming; the ratio of the amount of bromine elemental substance added to the volume of the quartz tube is 5mg: 1ml ; Place the sealed quartz tube in a muffle furnace at 950°C for 240 hours at high temperature, and cool it down to room temperature naturally to get MoTe 2 single chip.

[0068] Add 50mg MoTe to a 200ml sealable reactor 2 Single chip and 40ml of n-hexane, then add 3ml of butyllithium n-hexane solution (25%), and react for 5 hours under the conditions of sealed room temperature (wherein the temperature is 90°C and the pressure is 1.5MPa), and the precipitated sample is taken out to obtain the inserted layer intermediate; then put the intercalation intermediate in water and vibrate rapidly for 5s (t...

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Abstract

The invention provides a preparation method of a ditelluride nanosheet, which comprises the following steps: S1) mixing a metal ditelluride crystal, an alkali metal salt and an aprotic solvent for reaction under a high pressure condition to obtain an intermediate inserted with alkali metal ions; and S2) stripping the intermediate inserted with the alkali metal ions in a protic solvent to obtain the ditelluride nanosheet. Compared with the prior art, alkali metal ions are inserted between metal ditelluride layers under the condition of high pressure, so that the crystallinity and integrity of the plane are ensured while the interlayer spacing is enlarged. Rapid expansion dissociation is carried out in protic solvent, solvent molecules are fully utilized to enter interlayer of intermediate, interlayer spacing is further enlarged, interlayer van der Waals force of metal ditelluride material is overcome, meanwhile, intralayer chemical bonds are effectively protected, and the large-size and high-quality ditelluride nanosheet is obtained. According to the method, solution reaction is utilized, the method is simple, the yield is high, the process is controllable, and macro quantization can be achieved.

Description

technical field [0001] The invention belongs to the technical field of nanometer materials, and in particular relates to a metal ditelluride nanosheet and a preparation method thereof. Background technique [0002] Since Novoselov, Geim and their collaborators at the University of Manchester successfully used Scotch tape to exfoliate graphene from layered graphite micromechanics in 2004, two-dimensional materials have officially entered people's field of vision, and after more than ten years of development, they have achieved great progress. Explosive progress and promising application prospects. Graphene with a single atomic layer thickness has a different electronic structure from graphite and brings many excellent electrical, optical and mechanical properties. Similarly, with the research on other materials with layered structure, more and more materials with atomic thickness have been developed, including hexagonal boron nitride with insulating properties, molybdenum di...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B19/04B82Y40/00C30B9/12C30B29/46C30B29/64C30B33/00
CPCC01B19/007B82Y40/00C30B29/46C30B29/64C30B9/12C30B33/00C01P2004/64C01P2004/61C01P2004/60
Inventor 吴长征彭晶郭宇桥谢毅
Owner UNIV OF SCI & TECH OF CHINA
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