Crystal growth furnace growth cavity cooling system

Abstract

The invention discloses a crystal growth furnace growth cavity cooling system. The system comprises a cooling pipe, the cooling pipe comprises a cooling medium containing cavity, and an area enclosed by the cooling pipe is set as a crystal growth cavity; a cooling medium inlet and a cooling medium outlet are formed in the cooling pipe, a main cooling medium feeding channel communicates with a cooling medium inlet flow path, and the cooling medium outlet communicates with a main cooling medium discharging channel flow path; the crystal growth furnace growth cavity cooling system further comprises an auxiliary cooling system and an electric control system, a medium outlet of the auxiliary cooling system communicates with the cooling medium inlet flow path, and a cooling medium outlet communicates with a medium inlet flow path of the auxiliary cooling system; and the auxiliary cooling system is controlled by the electric control system, and when media in the main cooling medium feeding channel and / or the main cooling medium discharging channel flow abnormally, the auxiliary cooling system provides cooling media for the cooling medium containing cavity. The crystal growth furnace growth cavity cooling system has the advantages of being reliable in cooling, safe to use, convenient to maintain, high in automation degree and the like.

Description

technical field [0001] The application belongs to the technical field of crystal growth industry, and in particular relates to a cooling system for a growth chamber of a crystal growth furnace. Background technique [0002] As we all know, crystals play an important role in production and life. Crystals are often produced through crystal growth furnaces. Silicon carbide is one of the important third-generation semiconductor materials. It is widely used in power electronics, radio frequency devices, and optoelectronic devices because of its large band gap, high saturation electron mobility, high breakdown strength, and high thermal conductivity. and other fields. [0003] In the production process of silicon carbide, high temperature heating is required, especially in the crystal growth process, it is necessary to keep the growth chamber of the furnace at a high heating temperature for a long time, and at the same time, there are also high requirements for the stability of ...

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Problems solved by technology

However, in order to ensure the heating efficiency, the wall of the quartz tube is very thin, which is easy to break and cause cooling failure; if it cannot be monitored in real time, it will not only affect the crystal growth process, but even induce safety accidents

In addition, the cooling system of the growth chamber of the crystal growth furnace is prone to problems such as blockage of the cooling medium pipeline after a period of use, thereby stopping the circulation of the cooling medium of the quartz tube. Under high-temperature radiation, the cooling medium is extremely prone to boiling (even vaporization), resulting in an increase in the internal pressure of the quartz tube, which can easily cause deflagration, explosion and other safety accidents, seriously endangering equipment and human safety.

[0005] In addition, due to improper installation or operation, thermal expansion and contraction, etc., it is easy to produce tiny cracks, resulting in leakage of cooling medium. The safe use of the furnace lays a great hidden danger

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