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Diamond nuclear detector based on hydrogen-oxygen terminal full-vertical structure and preparation method

A vertical structure, nuclear detector technology, applied in the field of semiconductor technology, can solve the problems of large diamond surface work function, surface movable ion leakage, unfriendly environment, etc., and achieves suppression of surface leakage, high energy collection efficiency, high energy deposition. Effect

Pending Publication Date: 2021-07-16
XIDIAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, strong acid corrosion will bring the following problems: first, the safety of the process is poor, it is not friendly to the environment, and the time of strong acid corrosion is as high as several hours; second, strong acid corrosion adopts a wet process, which will bring new The pollutants on the surface will lead to a certain degree of leakage of mobile ions on the surface; third, the surface after strong acid corrosion is oxidized, resulting in a large work function on the diamond surface, which is not conducive to the formation of ohmic contact between the metal electrode and the diamond

Method used

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  • Diamond nuclear detector based on hydrogen-oxygen terminal full-vertical structure and preparation method
  • Diamond nuclear detector based on hydrogen-oxygen terminal full-vertical structure and preparation method
  • Diamond nuclear detector based on hydrogen-oxygen terminal full-vertical structure and preparation method

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Embodiment 1

[0044] The basic working principle of the nuclear detector is that the nuclear radiation interacts with the detector material, and the energy is deposited in the nuclear detector body to generate electron-hole pairs. After these charges are collected by the electric field on the electrodes at both ends of the nuclear detector, they are generated in the external circuit. Electrical signal, nuclear radiation is detected if the electrical signal of the nuclear detector after the radiation is incident is significantly higher than the background dark signal (dark current) when no radiation is incident. In addition, the contact between the nuclear detector material and the electrode should not produce high contact resistance, and should not produce obvious nonlinear characteristics. The external electric field should be applied to the energy deposition area as much as possible, thereby reducing the "dead zone" , to improve the charge collection efficiency, so that the nuclear detecto...

Embodiment 2

[0070] See Figure 2a-2e , Figure 2a-2e It is a process schematic diagram of a hydrogen-oxygen terminal-based diamond nuclear detector provided by an embodiment of the present invention. On the basis of the above-mentioned embodiments, this embodiment will introduce the process flow of the present invention in more detail. The method includes:

[0071] S01: Select the substrate. Such as Figure 2a As shown, a certain thickness of single crystal diamond material 001 is selected as the substrate material, and the inorganic and organic cleaning are performed sequentially.

[0072] S02: Hydrogen terminal preparation. Such as Figure 2b As shown, at a temperature of 700-950 ° C, the diamond substrate 001 is placed in hydrogen plasma for microwave plasma chemical vapor deposition reaction for 5-30 minutes, cooled to room temperature in a hydrogen atmosphere, and the upper and lower surfaces of the diamond substrate 001 Formation of hydrogen terminal 002 covered by carbon-hydr...

Embodiment 3

[0081] See image 3 and Figure 4 , image 3 It is a schematic diagram of the three-dimensional structure of a diamond nuclear detector based on a hydrogen-oxygen terminal full vertical structure provided by an embodiment of the present invention (the oxygen terminal on the side surface of the diamond substrate 001 is at image 3 not shown in); Figure 4 It is a schematic cross-sectional view of a diamond nuclear detector based on a hydrogen-oxygen terminal full vertical structure provided by an embodiment of the present invention. As shown in the figure, this embodiment provides a diamond nuclear detector based on a hydrogen-oxygen terminal full vertical structure, including: a diamond substrate 001, a hydrogen terminal 002 located on the upper and lower surfaces of the diamond substrate 001, and a hydrogen terminal located on the surface 002 of the hydrogen terminal. The ohmic contact electrode 003, and the oxygen terminal 004 located on the surface of the diamond substrate...

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Abstract

The invention relates to a diamond nuclear detector based on a hydrogen-oxygen terminal full-vertical structure and a preparation method. The preparation method comprises the following steps of forming hydrogen terminals covered by carbon-hydrogen bonds on the upper and lower surfaces of a diamond substrate, forming ohmic contact electrodes on the surfaces of the two hydrogen terminals respectively, and forming an oxygen terminal on the surface of the diamond substrate which is not covered by the ohmic contact electrode to obtain the diamond nuclear detector based on the hydrogen-oxygen terminal full-vertical structure. According to the method disclosed by the invention, the hydrogen terminal surface of the diamond has negative electron affinity and is easy to form ohmic contact, and the ohmic contact electrode is formed by combining the metal with a relatively high work function and the hydrogen terminal surface of the diamond, so that the problem that the ohmic contact electrode is difficult to prepare on the surface of the diamond is solved; the ultra-low impedance ohmic contact of the diamond is realized, the surface electric leakage is inhibited by using the oxygen terminal, the dark current of the diamond nuclear detector is reduced, and the performance of the diamond nuclear detector is improved.

Description

technical field [0001] The invention belongs to the technical field of semiconductor technology, and in particular relates to a diamond nuclear detector based on a hydrogen-oxygen terminal full vertical structure and a preparation method. Background technique [0002] With the rapid advancement of material science and semiconductor process technology, a detector material with better performance than the third-generation semiconductor materials silicon carbide (SiC) and gallium nitride (GaN), that is, diamond material, has appeared in the world. Ultra-wide band gap semiconductor diamond material has a large band gap, excellent carrier mobility and saturation drift velocity, small dielectric constant, high thermal conductivity and extremely high resistivity. The excellent material properties of diamond make nuclear detectors made of this material have super radiation resistance, extremely fast response time and extremely low dark current characteristics, which can withstand ex...

Claims

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Application Information

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IPC IPC(8): H01L31/108H01L31/028H01L31/18
CPCH01L31/1085H01L31/1804H01L31/028Y02P70/50
Inventor 苏凯张金风吕丹丹任泽阳张进成郝跃
Owner XIDIAN UNIV
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