Perovskite solar cell and preparation method thereof

A solar cell and perovskite technology, applied in the field of solar cells, can solve the problems of low photoelectric conversion efficiency of perovskite solar cells and restrict the commercialization process of perovskite solar cell efficiency, so as to reduce the overall cost and device performance Excellent, simple process preparation effect

Active Publication Date: 2021-07-16
HENAN UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the photoelectric conversion efficiency of perovskite solar cells prepared by traditional tin dioxide thin films is not high, which seriously restricts the improvement of the efficiency and commercialization of perovskite solar cells.

Method used

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  • Perovskite solar cell and preparation method thereof
  • Perovskite solar cell and preparation method thereof
  • Perovskite solar cell and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0040] (1) AZO conductive glass surface pretreatment

[0041] The size of the AZO conductive glass is 2cm×2cm. The AZO conductive glass is ultrasonically cleaned with deionized water, acetone and alcohol in sequence, and then dried with nitrogen.

[0042] (2) HCl inkjet atomization AZO conductive electrode

[0043] Dissolve 1 mL of hydrochloric acid in 19 mL of deionized water to prepare dilute hydrochloric acid. Put the prepared dilute hydrochloric acid into the Fujifilm Dimatix material printer, ink-jet atomize the AZO conductive electrode, the atomization time is 1s, rinse with deionized water, make AZO form a layered structure, and obtain the AZO conductive electrode after atomization; SnO 2 The preparation method of the precursor liquid is: weigh tin dioxide SnO 2 Ink (SnO 2 ink) 1mL, add deionized solution to dilute to 3% volume. Put the atomized AZO conductive electrode in the spin coater to spin coat the above SnO 2 The precursor liquid is rotated at a speed of ...

Embodiment 2

[0054] (1) AZO conductive glass surface pretreatment

[0055] The size of AZO conductive glass is 2cm×2cm. The surface treatment sequence of AZO conductive glass is ultrasonic cleaning with deionized water, acetone and alcohol in turn, and then blown dry with nitrogen.

[0056] (2) HCl inkjet atomization AZO conductive electrode

[0057] Dissolve 1 mL of hydrochloric acid in 19 mL of deionized water to prepare dilute hydrochloric acid. Put the prepared dilute hydrochloric acid into the Fujifilm Dimatix material printer, ink-jet atomize the AZO conductive electrode, the atomization time is 3s, rinse with deionized water, make the AZO form a layered structure, and obtain the atomized AZO conductive electrode;

[0058] SnO 2 The method of the precursor liquid is: weigh tin dioxide SnO 2 Ink (SnO 2 ink) 2mL, add deionized solution to dilute to 3% volume. Put the atomized AZO conductive electrode in the spin coater to spin coat the above SnO 2 The precursor liquid is rotated...

Embodiment 3

[0069] (1) AZO conductive glass surface pretreatment

[0070] The size of AZO conductive glass is 2cm×2cm. The surface treatment sequence of AZO conductive glass is ultrasonic cleaning with deionized water, acetone and alcohol in turn, and then blown dry with nitrogen.

[0071] (2) HCl inkjet atomization AZO conductive electrode

[0072] Dissolve 1 mL of hydrochloric acid in 19 mL of deionized water to prepare dilute hydrochloric acid. Put the prepared dilute hydrochloric acid into the Fujifilm Dimatix material printer, ink-jet atomize the AZO conductive electrode, the atomization time is 5s, rinse with deionized water, make AZO form a layered structure, and obtain the atomized AZO conductive electrode; SnO 2 The method of the precursor liquid is: weigh tin dioxide SnO 2 Ink (SnO 2 ink) 1.5mL, add deionized solution to dilute to 3% volume. Put the atomized AZO conductive electrode in the spin coater to spin coat the above SnO 2 The precursor liquid is rotated at a speed ...

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Abstract

The invention discloses a perovskite solar cell and a preparation method thereof, and belongs to the technical field of solar cells. The perovskite solar cell comprises the following structures from bottom to top: 1) a hydrochloric acid atomized AZO conductive glass substrate; 2) an N-type SnO2 electron transport layer; 3) a CH3NH3PbI3 light absorption layer; 4) a P type Sprio-OMeTAD hole transport layer; and 5) a gold electrode or silver electrode layer. According to the preparation method, the hydrochloric acid atomized AZO conductive glass substrate is firstly prepared, then the electron transport layer and the light absorption layer are prepared through using a spin coating method, and an AZO transparent electrode is atomized through using HCl, so that an AZO conductive electrode is made to form a layered structure, the overall cost of the cell is reduced, meanwhile, the electrode can be atomized in a large area, the process preparation is simple, and the cell efficiency is improved.

Description

technical field [0001] The invention relates to the technical field of solar cells, in particular to a perovskite solar cell and a preparation method thereof. Background technique [0002] Zinc oxide-doped aluminum (AZO) is cheap, abundant in sources, non-toxic, and more stable than ITO thin films in hydrogen plasma, and has photoelectric properties comparable to ITO thin films. AZO has good electrical conductivity and stable performance. AZO thin films have been applied in flat panel displays and thin film solar cells. [0003] In perovskite solar cells, AZO is a potential transparent conductive electrode and electron transport layer. Some scholars have reported that using AZO as the top electrode to obtain 13% efficiency, however, there are a large number of defects between AZO and perovskite films that lead to The device efficiency hysteresis is serious. Tin dioxide (SnO 2 ) is an N-type semiconductor, which has good permeability to visible light, excellent chemical st...

Claims

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Application Information

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IPC IPC(8): H01L51/48H01L51/42
CPCH10K71/12H10K71/15H10K30/15Y02E10/549
Inventor 刘荣王万龙谭付瑞高跃岳董琛岳根田贾小永张伟风
Owner HENAN UNIVERSITY
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