Cadmium indium selenide/copper zinc sulfide nano composite material as well as preparation method and application thereof

A technology of zinc copper sulfide and cadmium selenide, applied in the field of photocatalysis, can solve the problems of high recombination rate of photogenerated carriers and wide band gap, and achieve the effects of improved hydrogen production effect, easy operation, and simple preparation method

Active Publication Date: 2021-07-20
QINGDAO UNIV OF SCI & TECH
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In order to solve the problems of high recombination rate of photogenerated carriers and wide band gap when quantum dots and sulfides are used alone, the present invention provides a ternary sulfide zinc copper sulfide as the substrate, using the water phase ternary alloy quantum dot selenium The c

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] This embodiment provides a method for preparing an aqueous phase ternary quantum dot cadmium indium selenide, comprising the following steps:

[0028] (1) Add 0.3155g selenium powder, 6mL deionized water and 0.34g NaBH to the serum bottle in sequence 4 , a rubber stopper with a syringe needle inserted on the stopper, reacted under magnetic stirring to obtain a colorless and transparent solution A;

[0029] (2) Dissolve 100mL of 0.01M Cd(NO 3 ) 2 solution and 100mL 0.01M In(NO 3 ) 3 The solution was added into a three-necked flask, and stirred evenly to obtain solution B;

[0030] (3) Add 421.8 μL of 3-mercaptopropionic acid to the solution B, then adjust the pH to 10.00 with 1M NaOH solution; use a syringe to get 0.6 mL of the solution A and quickly inject it into the three-necked flask, and wait for the reaction to stabilize. Heating to reflux at 100° C. for 2 hours to obtain the cadmium indium selenide quantum dot solution.

[0031] The steps (2) (3) are all car...

Embodiment 2

[0033] This embodiment provides a kind of ternary sulfide Zn 0.92 Cu 0.08 The preparation method of S, comprises the steps:

[0034] (1) Add 1g of polyvinylpyrrolidone and 15mmol of thiourea into 80mL of 50v / v% acetonitrile aqueous solution, stir and dissolve to obtain solution A;

[0035] (2) Add 0.64mmol Cu(NO 3 ) 2 ·3H 2 O and 7.36mmol Zn(NO 3 ) 2 ·6H 2 O, magnetically stirred for 1 h to obtain solution B;

[0036] (3) The solution B was hydrothermally reacted at 200°C for 6 hours to obtain the Zn 0.92 Cu 0.08 S.

Embodiment 3

[0038] This embodiment provides a cadmium indium selenide / Zn 0.92 Cu 0.08 The preparation method of S, comprises the steps:

[0039] (1) Add 0.3155g selenium powder, 6mL deionized water and 0.34g NaBH to the serum bottle in sequence 4 , a rubber stopper with a syringe needle inserted on the stopper, reacted under magnetic stirring to obtain a colorless and transparent solution A;

[0040] (2) Dissolve 100mL of 0.01M Cd(NO 3 ) 2 solution and 100mL 0.01M In(NO 3 ) 3 The solution was added into a three-necked flask, and stirred evenly to obtain solution B;

[0041] (3) Add 421.8 μL of 3-mercaptopropionic acid to the solution B, then adjust the pH to 10.00 with 1M NaOH solution; use a syringe to get 0.6 mL of the solution A and quickly inject it into the three-necked flask, and wait for the reaction to stabilize. Heating to reflux at 100° C. for 2 hours to obtain the cadmium indium selenide quantum dot solution. The steps (2) (3) are all carried out under a nitrogen atmosp...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention provides a cadmium indium selenide/copper zinc sulfide nano composite material, a preparation method thereof and application of the cadmium indium selenide/copper zinc sulfide nano composite material in photocatalytic hydrogen production. The preparation method of the indium cadmium selenide/copper zinc sulfide comprises the following steps: (1) synthesizing ternary sulfide copper zinc sulfide by using a solvothermal method; (2) synthesizing water-phase cadmium indium selenide quantum dots; and (3) compounding the ternary sulfide copper zinc sulfide with the cadmium indium selenide quantum dots to obtain the cadmium indium selenide/copper zinc sulfide. Besides, when the cadmium indium selenide/copper zinc sulfide prepared by the method is used as a photocatalytic hydrogen production material, the hydrogen production effect is obviously improved compared with that of copper zinc sulfide and cadmium indium selenide quantum dots, the photocatalytic hydrogen production amount within 6 hours can reach 4623.2 mu mol/g, and the material can keep good cycle stability in the photocatalytic hydrogen production process.

Description

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): B01J27/057B01J27/13B01J37/10C01B3/04
CPCB01J27/0573B01J35/004B01J35/023B01J35/0006B01J37/10C01B3/042B01J27/13Y02E60/36
Inventor 韩吉姝王颖王磊赵瑞阳徐扬帆杨宇
Owner QINGDAO UNIV OF SCI & TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap