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CdZnTe radiation detector

A technology of radiation detectors and crystals, applied in the field of radiation detection, can solve the problems of affecting electrode collection, affecting charge collection efficiency, reducing counting statistics or energy spectrum resolution performance, etc., to achieve the effect of enhancing performance and improving charge collection efficiency

Pending Publication Date: 2021-07-20
中国航天科工集团第二研究院
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, when there are many defects on the peripheral end face, some carriers will drift to the surrounding end face, thereby affecting the collection of charges by the electrodes, affecting the collection efficiency of charges, and reducing the performance of counting statistics or energy spectrum resolution.

Method used

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Examples

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Embodiment 1

[0032] see Figure 5 , the embodiment of the present invention is used to provide a CdZnTe radiation detector, including a CdZnTe crystal 2 . The CdZnTe crystal 2 is columnar, and the CdZnTe crystal 2 is an intrinsic state or a P-type semiconductor. The intrinsic state means that the CdZnTe crystal 2 is not doped with any substance, and the P-type semiconductor means that the CdZnTe crystal 2 is a semiconductor dominated by positively charged holes, and pure silicon is doped with trivalent elements boron, aluminum or Formed by doping impurities containing trivalent elements.

[0033] An anode 1 is arranged on one bottom surface of the CdZnTe crystal 2, and a cathode 3 is arranged on the other bottom surface, and an N-type heavily doped region 4 is arranged at a position corresponding to each side, and the N-type heavily doped region 4 is for passing through the side facing CdZnTe crystal 2 is formed by doping impurity ions. Specifically, the N-type heavily doped region 4 is...

Embodiment 2

[0042] This embodiment is used to provide a kind of CdZnTe radiation detector, such as Figure 7 As shown, the CdZnTe crystal 2 is included, and the CdZnTe crystal 2 is columnar.

[0043] An anode 1 is arranged on one bottom surface of the CdZnTe crystal 2, and a cathode 3 is arranged on the other bottom surface, each side is covered by an insulating layer 6, and a metal electrode 7 is arranged on the insulating layer 6, and the metal electrode 7 is negatively biased. The insulating layer 6 can be silicon oxide, silicon nitride, aluminum oxide and other materials that can make good contact with the CdZnTe crystal 2 .

[0044] During specific implementation, when the incident particles are incident on the CdZnTe crystal 2, a large number of electron carriers and hole carriers will be excited in the CdZnTe crystal 2, and the anode 1 is charged with a zero potential, and the cathode 3 is charged with a negative high voltage. Under the action of the electric field, the hole carri...

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Abstract

The invention discloses a CdZnTe radiation detector, relates to the technical field of radiation detection, and aims to solve the problem of low charge collection efficiency caused by the influence of residual defects on the peripheral end surface of a CdZnTe crystal. The CdZnTe radiation detector comprises a columnar CdZnTe crystal, an anode is arranged on one bottom surface, a cathode is arranged on the other bottom surface, an N-type heavily doped region is arranged at a position corresponding to each side surface, or each side surface is covered by an insulating layer, a metal electrode is arranged on the insulating layer, and negative bias voltage is applied to the metal electrode. Therefore, a space charge region can be formed on the peripheral end face, electron carriers are prevented from diffusing towards the peripheral end face, and the charge collection efficiency is improved. The CdZnTe radiation detector provided by the invention is used for radiation detection.

Description

technical field [0001] The invention relates to the technical field of radiation detection, in particular to a CdZnTe radiation detector used in radiation detection. Background technique [0002] Cadmium zinc telluride (CdZnTe) a new generation of compound semiconductors is an ideal material for the manufacture of X-ray and low-energy gamma-ray detectors. CdZnTe detectors can directly convert X-rays or γ-rays into electrical signals. Because of the direct conversion, the advantage is that there is no light scattering in the indirect conversion process of traditional scintillator detectors, so the spatial resolution is high and the structure is simple. [0003] However, since cadmium zinc telluride is a ternary compound material, there are defects caused by component deviation and impurities in the preparation process, and at the same time, defects are also caused due to the incomplete crystal lattice during the preparation process. The electrical properties have not been ef...

Claims

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Application Information

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IPC IPC(8): H01L31/0224H01L31/0352H01L31/036H01L31/115
CPCH01L31/022408H01L31/035272H01L31/036H01L31/115
Inventor 胡海帆秦秀波赵宏鸣刘鹏浩李志垚马喆毛磊
Owner 中国航天科工集团第二研究院
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