Preparation method of PERC solar cell

A solar cell and thickness control technology, applied in circuits, electrical components, photovoltaic power generation, etc., can solve the problems of battery conversion efficiency drop, oxide layer damage, PN junction exposure, etc., to improve conversion efficiency, reduce leakage, and high The effect of conversion efficiency

Inactive Publication Date: 2021-07-23
SHANXI LUAN PHOTOVOLTAICS TECH
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AI Technical Summary

Problems solved by technology

Laser SE needs to heavily dope the diffused PN junction, resulting in damage to the oxide layer in the heavily doped area, and the heavily doped part of the PN junction will be exposed
During the process of groove alkali polishing on the back side, the polishing solution will erode the front PN junction, resulting in a decrease in battery conversion efficiency

Method used

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  • Preparation method of PERC solar cell

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[0033] The preparation method of the high-efficiency PERC solar cell in this embodiment is as follows:

[0034] Texture making: 1000 pieces of P-type 1-3Ω.cm silicon wafers are selected for cleaning, texturing, pickling, water washing and drying, the weight loss is controlled to 0.3g, and the reflectivity is controlled to 9.5%;

[0035] Diffusion: Diffusion is performed on the textured silicon wafer at low pressure, the square resistance is controlled at 95Ω / □, and the junction depth is controlled at 240nm;

[0036] Laser SE: Laser doping is carried out using the DR laser machine, and the rear resistance of SE is controlled at 50Ω / □;

[0037] Chain oxidation: Oxidize the silicon wafer after SE, the thickness of the oxide film is controlled at 20nm, and the temperature is 520°C;

[0038] Ozone: The ozone concentration is controlled at 50ppm;

[0039] Remove back PSG: use HF to remove back PSG;

[0040] Alkali etching and polishing: use sodium hydroxide and additives to perfo...

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Abstract

The invention relates to the field of solar cell production. The invention provides a preparation method of a PERC solar cell. The method comprises the steps of texturing, diffusion, laser SE, back PSG removal, alkali etching and polishing, front PSG removal, annealing, aluminum oxide treatment, front antireflection film deposition, back laser grooving, screen printing, and sintering, wherein after laser SE, chain oxidation, ozone oxidation and back PSG removal and subsequent steps are sequentially carried out, in the chain oxidation step, a layer of oxidation film is plated on the surface subjected to phosphorus doping in laser SE, the thickness of the oxidation film is controlled to be 10-100 nm, the temperature is controlled to be 500-800 DEG C, and in the ozone oxidation step, ozone is introduced after the oxidation film is generated in the chain oxidation step to enhance the front protection effect, and the ozone concentration is controlled to be 10-100 ppm.

Description

technical field [0001] The invention relates to the field of solar cell production. Background technique [0002] With global warming, various renewable energy sources are developing rapidly. Among them, photovoltaics, as an important renewable energy source, have developed rapidly in the past 15 years, and various types of batteries have flourished. Among them, monocrystalline high-efficiency PERC batteries have initially achieved grid parity at an affordable price, making an important contribution to the development of global new energy. [0003] PERC solar cells are currently one of the most mainstream high-efficiency cells on the market. Among them, the SE-PERC battery is an added process on the basis of PERC, which realizes the selective doping of solar cells. Combining the front laser heavy doping technology (SE) with the thin grid lines greatly improves the passivation effect, the open circuit voltage is significantly improved, and the conversion efficiency of solar...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L31/068
CPCH01L31/1804H01L31/1868H01L31/068Y02P70/50Y02E10/547
Inventor 蒋万昌
Owner SHANXI LUAN PHOTOVOLTAICS TECH
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