High-thickness low-defect six-inch silicon carbide crystal growth method conforming to industrial production

Abstract

The invention relates to a high-thickness low-defect six-inch silicon carbide crystal growth method conforming to industrial production, and aims to overcome various defects, such as crystal form mutation, dislocation increase, low effective crystal output (insufficient thickness) and the like, which are extremely easy to generate in the industrial large-scale six-inch silicon carbide crystal growth process. The invention provides a novel process method suitable for industrial large-scale crystal growth, wherein on the premise of the same growth period and the same feeding amount, not only can the effective production of the crystals be ensured, but also the quality of the crystals can be effectively ensured to be qualified. The method mainly comprises the steps of primary temperature rise, primary pressure reduction, secondary temperature rise, secondary pressure reduction, tertiary temperature rise, thermal field movement, constant-temperature pressure rise, primary temperature reduction, secondary temperature reduction, final air suction and exchange and the like. Through the process, the thickness of six-inch silicon carbide crystals produced in a single furnace can be larger than or equal to 25 mm, and generation of different crystal forms and continuous increase of dislocation are effectively inhibited.

Description

technical field [0001] The invention relates to the technical field of silicon carbide crystal growth, in particular to a high-thickness, low-defect six-inch silicon carbide crystal growth method for industrialized mass production. Background technique [0002] SiC is one of the third-generation wide-bandgap semiconductor materials. Compared with the first-generation semiconductor material Si, this material has excellent properties such as high temperature resistance, high pressure, high frequency, and high power. Silicon carbide is used in 5G communications, smart grids, high-speed rail, and new energy. It has a wide range of applications in fields such as automobiles and photovoltaic inverters. It is known as the "golden track", and those who win silicon carbide win the world. With the gradual escalation of the Sino-US trade war, the domestic industrial production of silicon carbide is undergoing rapid layout. Therefore, the effective output, quality assurance, and price...

AI Technical Summary

Problems solved by technology

[0003] The current international mainstream silicon carbide crystal growth process is the PVT growth process. The defects of this process are that the crystal form is easy to change during the crystal growth process, there are many crystal defects, and the output of a single furnace is low.

These adverse factors are also the main reasons for the high price of six-inch silicon carbide wafers