Ceramic-based double-sided RDL 3D packaging method and structure

A packaging method and packaging structure technology, applied in electrical components, electrical solid devices, circuits, etc., can solve electromagnetic shielding design, reliability, flexibility, cost production cycle, system heat dissipation short board, difficult to achieve large-scale system integration , affecting system performance and other issues, to achieve the effect of shortening physical distance, reducing transmission loss, and reducing system thermal resistance

Pending Publication Date: 2021-07-27
NO 43 INST OF CHINA ELECTRONICS TECH GRP CETC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The main research focus of SiP technology is 2.5D adapter board technology, heterogeneous interconnection, chip stacking, etc. Among them, silicon-based 2.5D adapter board, TSV and other technologies are mostly used in the integration of heterogeneous chips in recent years, which can realize system miniaturization , lightweight; but correspondingly, this type of technology is difficult to achieve large-scale system integration, and there are shortcomings in electromagnetic shielding design, reliability, flexibility, cost, production cycle, system heat dissipation, etc., which in turn affects system performance

Method used

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  • Ceramic-based double-sided RDL 3D packaging method and structure
  • Ceramic-based double-sided RDL 3D packaging method and structure
  • Ceramic-based double-sided RDL 3D packaging method and structure

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Effect test

Embodiment 1

[0037] Example 1, see Figure 1-5 , a ceramic-based double-sided RDL 3D packaging structure, including a ceramic substrate 9 with a multi-layer wiring structure, and the interior of the ceramic substrate 9 is electrically vertically interconnected through thick-film TCV vias 11; the front of the ceramic substrate 9 is prepared with a front multi-layer Thin film RDL layer 14, electronic devices such as active chips 2 302 and passive devices 4 are installed on the front multilayer thin film RDL layer 14, metal ring frame 5 can be assembled by gold tin / silver copper welding, and metal ring frame 5 is welded The cover plate 6 realizes airtight packaging. The back side of ceramic substrate 9 offers at least one cavity, and the inside of cavity is also provided with electronic device, and electronic device can be active chip-301 here, also can be the combination of active chip-301 and passive device, active chip The number of one 301 is designed according to the demand, and the mod...

Embodiment 2

[0039]Embodiment 2, for the cavity, a thick-film TCV through hole 11 can be provided inside the cavity for grounding, or a composite metal layer 15 can be printed on the bottom surface of the cavity to realize a metal interconnection structure. According to design requirements, the cavity can also be designed as an electromagnetic shielding cavity. In the electromagnetic shielding cavity, the composite metal layer 15 and the thick-film TCV through-holes 11 exist at the same time, and there are at least four thick-film TCV through-holes 11 arranged around the active chip one 301 . Thus, the thick-film TCV through-hole 11 and the composite metal layer 15 form an electromagnetic shielding structure to protect the active chip 1 301 .

Embodiment 3

[0040] Embodiment 3, above-mentioned encapsulation structure is made by the encapsulation method of following steps, as Figure 7 As shown, the specific steps are as follows:

[0041] Step 1: preparing a ceramic substrate with a cavity structure on the back;

[0042] Specifically, step 1 includes the following steps:

[0043] Step 1.1: Al 2 o 3 / AlN slurry casting into Al 2 o 3 / AlN raw ceramic belt, according to the design requirements for Al 2 o 3 / AlN raw porcelain tape for cutting and punching.

[0044] Step 1.2: According to the design requirements, print a composite metallization pattern 10 on each layer of green ceramic tape, and at the same time fill the punched holes with metals such as Au, Ag, W, WCu, WTi, MoCu to form thick film TCV through holes 11 , according to the design requirements, in the cavity on the back of the green ceramic tape, print the composite metal layer 15 or make the thick film TCV through hole 11 or both. When performed at the same time...

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Abstract

The invention discloses a ceramic-based double-sided RDL 3D packaging method and structure in the field of high-density integrated circuit packaging, the ceramic-based double-sided RDL 3D packaging structure comprises a ceramic substrate with a multi-layer wiring structure, and the interior of the ceramic substrate realizes electrical vertical interconnection through thick-film TCV through holes; a front multilayer thin film RDL layer is prepared on the front surface of the ceramic substrate, an electronic device is mounted on the front multilayer thin film RDL layer, and the front surface of the ceramic substrate is packaged by adopting an airtight structure; at least one cavity is formed in the back face of the ceramic substrate, and an electronic device is further arranged in the cavity. A cured dielectric layer is formed in the cavity and on the back surface of the ceramic substrate, and a back surface multi-layer thin film RDL layer is prepared on the dielectric layer. Electronic devices such as active chips and passive devices are integrated on the packaging structure, RDL of high-density chips can be achieved without a 2.5 D adapter plate, the physical distance of electrical transmission between the chips is effectively shortened, transmission loss is reduced, the circuit bandwidth is improved, system thermal resistance is reduced, and wiring density is improved.

Description

technical field [0001] The invention relates to the field of high-density integrated circuit packaging, in particular to a ceramic-based double-sided RDL 3D packaging method and structure. Background technique [0002] In the current military environment, miniaturization, lightweight, modularization, and multi-function have become an inevitable trend in the development of future intelligent weapons and equipment. At present, system integration based on traditional assembly and packaging technology is difficult to meet the needs of the development of new weapon equipment systems in the future. SiP (System-in-Package) technology can integrate a variety of process-incompatible heterogeneous chips in a package structure to realize a system with complete functions or certain functions. Compared with SoC (System on Chip) technology, SiP has the advantages of flexible and fast design, short cycle time, and low cost, which can well meet the development needs of future weapons and e...

Claims

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Application Information

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IPC IPC(8): H01L25/18H01L23/31H01L21/60H01L23/488
CPCH01L23/3128H01L24/02H01L24/11H01L24/13H01L25/18H01L2224/02331H01L2224/02373H01L2224/02381H01L2224/111H01L2224/13008
Inventor 孙函子门国捷徐浩然王宁刘全威张崎
Owner NO 43 INST OF CHINA ELECTRONICS TECH GRP CETC
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