A preparation method and device for high-purity silicon tetrafluoride
A technology of high-purity silicon tetrafluoride and preparation device, which is applied in chemical instruments and methods, halogenated silicon compounds, halogenated silanes, etc. Effect of acidity, improved purity, simple process
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Embodiment 1
[0068] A kind of preparation method of high-purity silicon tetrafluoride, described method adopts such as figure 1 The preparation device of a kind of high-purity silicon tetrafluoride shown is carried out, and step is as follows:
[0069] ①Place the elemental silicon particles 3 with a particle size of 0.1mm in layers on the layered plate 2 in the reaction tower 1, raise the temperature to a displacement treatment temperature of 80°C, open the vacuum valve 5 of the reaction tower, and connect the reaction tower through the vacuum pipeline 4. 1. Vacuumize the interior to -0.095MPa, close the vacuum valve 5 of the reaction tower, open the replacement gas feed valve 12, feed helium gas with a purity of 99.999% through the replacement gas pipeline 11 until the inside of the reaction tower 1 is at normal pressure, and complete one pass Replacement treatment, repeat the replacement treatment 3 times, until the moisture content detected in the helium after the treatment is 0.4ppm, i...
Embodiment 2
[0079] A kind of preparation method of high-purity silicon tetrafluoride, described method adopts such as figure 1 The preparation device of a kind of high-purity silicon tetrafluoride shown is carried out, and step is as follows:
[0080] ① Place the elemental silicon particles 3 with a particle size of 3mm in layers on the layered plate 2 in the reaction tower 1, raise the temperature to a displacement treatment temperature of 150°C, open the vacuum valve 5 of the reaction tower, and pass the vacuum line 4 to the reaction tower 1. Vacuumize the interior to -0.095MPa, close the vacuum valve 5 of the reaction tower, open the replacement gas feed valve 12, and feed helium gas with a purity of 99.999% through the replacement gas pipeline 11 until the inside of the reaction tower 1 is at normal pressure, and complete one round of replacement treatment, repeat the replacement treatment 8 times, until the moisture content detected in the helium after the treatment is 0.3ppm, indica...
Embodiment 3
[0090] A kind of preparation method of high-purity silicon tetrafluoride, described method adopts such as figure 1 The preparation device of a kind of high-purity silicon tetrafluoride shown is carried out, and step is as follows:
[0091] ① Place the elemental silicon particles 3 with a particle size of 1.5mm in layers on the layered plate 2 in the reaction tower 1, raise the temperature to a displacement treatment temperature of 120°C, open the vacuum valve 5 of the reaction tower, and connect the reaction tower through the vacuum pipeline 4. Vacuumize the inside of 1 to -0.095MPa, close the vacuum valve 5 of the reaction tower, open the replacement gas feed valve 12, and feed helium with a purity of 99.999% through the replacement gas pipeline 11 until the inside of the reaction tower 1 is at normal pressure, and complete one pass Replacement treatment, repeat the replacement treatment 5 times, until the moisture content detected in the helium after the treatment is 0.4ppm,...
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