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Piezoelectric film composite substrate and preparation method thereof

A piezoelectric thin film and composite substrate technology, which is applied in the manufacture/assembly of piezoelectric/electrostrictive devices, circuits, electrical components, etc., can solve problems such as increased optical transmission loss, excessive wafer warpage, and thin film shedding , to achieve the effect of reducing loss, reducing optical loss, and preventing warpage

Active Publication Date: 2021-08-06
JINAN JINGZHENG ELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in this structure, when light of different incident angles is simultaneously transmitted in the piezoelectric film layer (that is, light of different modes is transmitted), light with a small incident angle is easily refracted from the piezoelectric film layer with a large refractive index into the piezoelectric film layer. Silicon oxide spacer layer with low refractive index, which in turn leads to increased optical transmission loss
[0005] For the above problems, the optical transmission loss is usually improved by increasing the thickness of the isolation layer. However, the increase in the thickness of the isolation layer will cause the wafer to warp too much and easily Cause the film to fall off, and then affect the subsequent device processing technology
For example, when the subsequent process is a photolithography process, if the substrate warpage is too large, the photolithography machine needs to be refocused every time it is stepped, which seriously affects the efficiency of the photolithography process

Method used

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  • Piezoelectric film composite substrate and preparation method thereof
  • Piezoelectric film composite substrate and preparation method thereof
  • Piezoelectric film composite substrate and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0094] First, a silicon wafer substrate having a size of 3 inches and a thickness of 0.4 mm is prepared, and the silicon wafer substrate has a smooth surface. After the silicon wafer substrate is thoroughly cleaned, PECVD is used to alternately deposit Si on the upper surface and the bottom surface of the silicon wafer substrate facing away from each other. 3 N 4 layer and SiO 2 Floor.

[0095] Specifically, Si is first deposited on the upper surface of the silicon wafer substrate 3 N 4 layer, then the Si 3 N 4 SiO 2 layers, repeated alternately in sequence to form a stacked structure consisting of 5 layers of Si 3 N 4 layer / SiO 2 layer isolation layer. Similarly, Si was alternately deposited on the bottom surface of the Si wafer substrate 3 N 4 layer and SiO 2 layer to form a stacked structure consisting of 5 Si 3 N 4 layer / SiO 2 Compensation layer for layers. In the isolation layer and compensation layer, Si 3 N 4 layer and SiO 2 Each of the layers may ha...

Embodiment 2

[0098] First, a silicon wafer substrate having a size of 3 inches and a thickness of 0.4 mm is prepared, and the silicon wafer substrate has a smooth surface. After the silicon wafer substrate is thoroughly cleaned, LPCVD is used to alternately deposit Si on the upper surface and the bottom surface of the silicon wafer substrate facing away from each other. 3 N 4 layer and SiO 2 Floor.

[0099] Specifically, Si is first deposited on the upper surface of the silicon wafer substrate 3 N 4 layer, then the Si 3 N 4 SiO 2 layers, repeated alternately in sequence to form a stacked structure consisting of 6 layers of Si 3 N 4 layer / SiO 2 layer isolation layer. Similarly, Si was alternately deposited on the bottom surface of the Si wafer substrate 3 N 4 layer and SiO 2 layer to form a stacked structure consisting of 6 Si 3 N 4 layer / SiO 2 Compensation layer for layers. In the isolation layer and compensation layer, Si 3 N 4 layer and SiO 2 Each of the layers may ha...

Embodiment 3

[0103] First, a silicon wafer substrate having a size of 4 inches and a thickness of 0.4 mm is prepared, and the silicon wafer substrate has a smooth surface. After the silicon wafer substrate is thoroughly cleaned, LPCVD is used to alternately deposit Si on the upper surface and the bottom surface of the silicon wafer substrate facing away from each other. 3 N 4 layer and SiO 2 Floor.

[0104] Specifically, Si is first deposited on the upper surface of the silicon wafer substrate 3 N 4 ) layer, then the Si 3 N 4 SiO 2 layers, repeated alternately in sequence to form a stacked structure consisting of 4 layers of Si 3 N 4 layer / SiO 2 layer isolation layer. Similarly, Si was alternately deposited on the bottom surface of the Si wafer substrate 3 N 4 layer and SiO 2 layer to form a stacked structure consisting of 4 Si 3 N 4 layer / SiO 2 Compensation layer for layers. In the isolation layer and compensation layer, Si 3 N 4 layer and SiO 2 Each of the layers may ...

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Abstract

The invention discloses a piezoelectric film composite substrate and a preparation method thereof. The piezoelectric film composite substrate comprises a substrate, a piezoelectric film layer located on the upper surface of the substrate, and an isolation layer located between the substrate and the piezoelectric film layer. The isolation layer comprises a plurality of sub-isolation layers which have different refractive indexes and are alternately stacked, and the refractive index of each sub-isolation layer in the plurality of sub-isolation layers is smaller than that of the piezoelectric film layer.

Description

technical field [0001] The present invention relates to a piezoelectric thin film composite substrate and a preparation method thereof, more particularly, to a piezoelectric thin film composite substrate capable of reducing light loss and a preparation method thereof. Background technique [0002] Piezoelectric thin film materials such as lithium niobate thin film and lithium tantalate thin film have excellent nonlinear optical properties, electro-optic properties and acousto-optic properties, and are widely used in optical signal processing, information storage and other fields. The piezoelectric thin film composite substrate containing lithium niobate thin film and / or lithium tantalate thin film can be used to realize small-volume optoelectronic devices, and has very broad application prospects in the field of integrated optics and acoustics. [0003] At present, a typical piezoelectric thin film composite substrate may have a stacked structure such as substrate / isolation ...

Claims

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Application Information

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IPC IPC(8): H01L21/265H01L21/18H01L41/39
CPCH01L21/265H01L21/185H10N30/093
Inventor 张秀全朱厚彬李真宇薛海蛟李洋洋张涛
Owner JINAN JINGZHENG ELECTRONICS
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