Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

MEMS silicon-based cavity circulator/isolator circuit film structure and preparation method

A circulator and isolator technology, applied in the field of MEMS silicon-based cavity circulator/isolator circuit film layer structure and preparation, can solve the problems of reducing the resistivity of high-resistance silicon, increasing device insertion loss, and large conductor loss, etc. , to achieve the effect of reducing insertion loss, reducing conductor loss and low loss requirements

Pending Publication Date: 2021-08-24
中国电子科技集团公司第九研究所
View PDF9 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The microstrip circuit film structure used in existing MEMS silicon-based cavity circulators is generally a chromium / gold structure, and the microstrip circuit film structure used in an isolator is generally a chromium / tantalum nitride / gold structure, chromium / gold, chromium The advantage of the / tantalum nitride / gold structure is that the process is simple and the adhesion to silicon is easy to control, but there are also major problems, that is, the insertion loss of the device is too large, and the cost is relatively high
The main reason for the large loss is that the resistivity of gold is relatively high, and the conductor loss is relatively large. In addition, this kind of film layer structure has the problem of diffusion of the gold layer into the silicon during high-temperature thermocompression bonding, resulting in the resistivity of high-resistance silicon. Reduce and increase the resistive loss of silicon, thereby increasing the insertion loss of the device

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • MEMS silicon-based cavity circulator/isolator circuit film structure and preparation method
  • MEMS silicon-based cavity circulator/isolator circuit film structure and preparation method
  • MEMS silicon-based cavity circulator/isolator circuit film structure and preparation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034] see figure 1 , a MEMS silicon-based cavity circulator / isolator circuit film structure, which includes a gold film layer 1, a barrier film layer 2 (titanium film), a copper film layer 3, and a tantalum nitride support film layer 4 from top to bottom , base film layer 5 (chromium film), isolation film layer 6 (silicon dioxide film) and high resistance silicon layer 7;

[0035] The preparation method is as follows:

[0036] (1) Marking and cleaning two high-resistance silicon layers 7;

[0037] (2) Uniformly oxidize a layer of 300nm thick silicon dioxide film on the front and back of the high resistance silicon layer 7 as the isolation film layer 6;

[0038] (3) Magnetron sputtering is used to sputter a layer of metal chromium thin film as the base layer 5, room temperature sputtering, sputtering power 180W, chromium film thickness 30nm;

[0039] (4) Put the silicon wafer into a box furnace for vacuum annealing, the annealing temperature is 250°C, and the annealing time...

Embodiment 2

[0049] A MEMS silicon-based cavity circulator / isolator circuit film structure, which includes gold film layer 1, barrier film layer 2 (titanium film), copper film layer 3, tantalum nitride support film layer 4, Primer film layer 5 (titanium film), isolation film layer 6 (silicon dioxide film) and high resistance silicon layer 7;

[0050] The preparation method is as follows:

[0051] (1) Marking and cleaning two high-resistance silicon layers 7;

[0052] (2) Uniformly oxidize a layer of 180nm thick silicon dioxide film on the front and back of the high-resistance silicon layer 7;

[0053] (3) Magnetron sputtering is used to sputter a layer of metal titanium thin film as the base layer 5, room temperature sputtering, sputtering power 180W, titanium film thickness 50nm;

[0054] (4) Sputter a layer of copper film on the titanium film, the sputtering temperature is 400°C, the sputtering power is 900W, and the thickness of the copper film is 4000nm;

[0055] (5) sputtering a la...

Embodiment 3

[0062] Compared with Example 2 in this example, only in step (2) is "a metal titanium layer after uniformly evaporating a layer of 50nm metal titanium layer on the front and back of the high-resistance silicon layer 7, and the rest are the same as in Example 1, using the obtained film layer structure, the electrical performance test was carried out on the assembled 8-12GHz MEMS silicon-based isolator device, and the result was that the insertion loss ILMAX=0.58dB of the single-section device was 0.17dB lower than that of the MEMS isolator with the chromium / gold structure in the same frequency band.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses an MEMS silicon-based cavity circulator / isolator circuit film structure, and belongs to the field of microwave integrated devices. The circuit film structure sequentially comprises a gold film layer, a copper film layer, a tantalum nitride load film layer, a bottoming film layer, an isolation film layer and a high-resistance silicon layer from top to bottom, and preferably comprises a barrier film layer between the gold film layer and the copper film layer; The invention further discloses a preparation method of the circuit film structure. Compared with the prior art, the circuit film structure has the advantages that the insertion loss of the MEMS silicon-based cavity circulator / isolator device can be reduced by 0.2-0.3 dB, and the low-loss requirement of the application of the MEMS silicon-based cavity circulator / isolator device is met.

Description

technical field [0001] The invention relates to the field of microwave integrated devices, in particular to a MEMS silicon-based cavity circulator / isolator circuit film layer structure and a preparation method. Background technique [0002] Microwave ferrite circulator / isolator is an indispensable key device of various radar systems. It is mainly used to solve a series of problems such as microwave system level isolation, impedance matching, and antenna transceiver sharing, which can greatly improve the radar system's tactical performance. The loss of the circulator is closely related to the performance of the radar system. The lower the loss, the longer the detection range of the radar. At present, MEMS silicon-based cavity circulators have the advantages of good device performance, small size, and mass production. Among them, the structure of the metal thin film circuit fabricated on the high-resistance silicon wafer is closely related to the insertion loss of the circul...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): B81B7/02B81B7/00
CPCB81B7/02B81B7/0009B81C1/00023B81B2201/00
Inventor 林亚宁赖金明程隽隽周俊倪经吴燕辉陈学平李林玲冯旭文黄河
Owner 中国电子科技集团公司第九研究所
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com