Cutting method of silicon carbide crystal

A cutting method and silicon carbide technology, applied in chemical instruments and methods, crystal growth, single crystal growth and other directions, can solve the problems of rough cutting surface, low efficiency, high cost, small cutting loss, simple cutting process, and improved utilization. rate effect

Pending Publication Date: 2021-09-03
HEBEI SYNLIGHT CRYSTAL CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The purpose of the present invention is to provide a cutting method of silicon carbide crystal, which is used to solve the technical problems of high cost, low efficiency and rough cutting surface of the existing silicon carbide cutting method

Method used

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  • Cutting method of silicon carbide crystal
  • Cutting method of silicon carbide crystal
  • Cutting method of silicon carbide crystal

Examples

Experimental program
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Effect test

specific Embodiment 1

[0057] Cut a 4-inch cylindrical 4H-SiC (α-SiC) single crystal sample into small pieces with neat and smooth sections by laser cutting process, and observe its internal defects. The specific steps are as follows:

[0058] (1) Use X-ray crystal orientation instrument to determine the cleavage direction of 4H-SiC: and mark with a marker pen;

[0059] (2) Make parallel to the defect position of the sample The straight line of the direction and marked;

[0060] (3) Place the sample on the sample stage of the laser cutting machine, set the trajectory of the laser scanning to coincide with the marking line in step (2), set the width of the laser beam to 0.03mm, turn on the laser, and make the laser beam cut along the marking line , stop when the cutting depth reaches 0.2mm, and prepare grooves along the cleavage direction;

[0061] (4) Put the sample into the heating furnace and rapidly raise the temperature to 600°C, and keep the heating rate at 60°C / S. Thermal stress is gene...

specific Embodiment 2

[0064] The 6-inch cylindrical 6H-SiC (α-SiC) single crystal sample is cut into a rough silicon carbide gemstone with a neat and smooth cross-section by the wire cutting process. The specific steps are as follows:

[0065] (1) Use X-ray crystal orientation instrument to determine the cleavage direction of 6H-SiC: and Use a marker to make straight marks;

[0066] (2) Make parallel to the defect position of the sample and A plurality of straight lines in the direction are marked, and the distance between the parallel lines is determined according to the size of the silicon carbide gem, and the present embodiment adopts a spacing of 8mm;

[0067] (3) Place the sample on the sample table of the multi-wire cutting machine, adjust the position of the sample so that the direction of the reciprocating motion (cutting) of the steel wire coincides with the marking line, set the depth to 0.3mm, start the multi-wire cutting machine, and prepare Multiple grooves along the cleaving d...

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Abstract

The invention discloses a cutting method of a silicon carbide crystal, and relates to the technical field of silicon carbide crystals. The cutting method is used for solving the technical problems of high cost, low efficiency and rough cutting surfaces of an existing silicon carbide cutting method. The cutting method of the silicon carbide crystal comprises the following steps that a cleavage direction or a cleavage surface of the crystal is determined according to a specific crystal structure of the silicon carbide crystal; according to the size and shape of a silicon carbide crystal sample needing to be processed, a track needing to be cut is determined; a groove with a certain depth is manufactured on the determined track by adopting a specific processing technology; and acting force is applied to the position of the manufactured groove, or rapid heat treatment is carried out on the silicon carbide crystal, so that the silicon carbide crystal is completely cracked along the groove, and a small silicon carbide single crystal with a smooth and level section is obtained.

Description

technical field [0001] The invention relates to the technical field of silicon carbide crystals, in particular to a method for cutting silicon carbide crystals. Background technique [0002] As a member of the third-generation wide bandgap semiconductor materials, compared with common semiconductor materials such as silicon (Si) and gallium arsenide (GaAs), silicon carbide (SiC) materials have a large band gap and high carrier saturation migration speed. , high thermal conductivity, high critical breakdown field strength and many other excellent properties. Based on these excellent characteristics, silicon carbide materials are more ideal materials for preparing high-temperature electronic devices, high-frequency, and high-power devices. [0003] In addition, silicon carbide has a high refractive index (2.5-2.7), high hardness (Mohs hardness 9.3), and silicon carbide is extremely stable and can withstand high temperatures of 1000°C in air. In addition, silicon carbide has m...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B28D5/00B28D5/04C30B29/36C30B33/00C30B33/02
CPCB28D5/045B28D5/00C30B29/36C30B33/00C30B33/02
Inventor 牛晓龙杨昆路亚娟刘新辉董永洋周浩
Owner HEBEI SYNLIGHT CRYSTAL CO LTD
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