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Multi-parameter gas sensing microchip, preparation method thereof and gas sensor

A gas sensing and microchip technology, applied in semiconductor/solid-state device parts, microstructure technology, gaseous chemical plating, etc., can solve the problems of low integration, low detection accuracy, single heating temperature, etc. The effect of reducing power consumption, reducing volume and improving integration

Pending Publication Date: 2021-10-19
CHINA PETROLEUM & CHEM CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Since each micro-heating chip of the sensor array needs to be heated separately, and multiple micro-heating chips need multiple heating structures, the overall integration of the device is not high, and it cannot reflect the advantages of small volume and low energy consumption of semiconductor gas sensor devices
The heating temperature of the micro-heating chip of the above-mentioned gas sensor device is single, and one micro-heating chip corresponds to heating one gas-sensing sensing material. It is impossible to combine multiple MOS sensing materials on a single chip for detection at different temperatures. The detection accuracy is lower under

Method used

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  • Multi-parameter gas sensing microchip, preparation method thereof and gas sensor
  • Multi-parameter gas sensing microchip, preparation method thereof and gas sensor
  • Multi-parameter gas sensing microchip, preparation method thereof and gas sensor

Examples

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Embodiment 1

[0057] figure 2 It is a schematic structural diagram of the heating layer of the multi-parameter gas sensing microchip provided in Embodiment 1 of the present invention. like figure 2 As shown, the heating layer of the multi-parameter gas sensing microchip provided in this embodiment includes a heating electrode, and the heating electrode is a plurality of heating resistance wires with different cross-sectional areas, and the plurality of heating resistance wires form a plurality of heating elements. Area. The heating electrode includes a first heating resistance wire 211 , a second heating resistance wire 212 , and a third heating resistance wire 213 . The cross-sectional area of ​​the first heating resistance wire 211 is larger than that of the second heating resistance wire 212 , and the cross-sectional area of ​​the second heating resistance wire 212 is larger than that of the third heating resistance wire 213 . The first heating resistance wire 211 , the second heati...

Embodiment 2

[0062] image 3 It is a schematic structural diagram of the heating layer of the multi-parameter gas sensing microchip provided in the second embodiment of the present invention. The heating layer of the multi-parameter gas sensing microchip provided in this embodiment includes a heating electrode 21, and the heating electrode 21 is a heating resistance wire having a plurality of segments with different cross-sectional areas, and the plurality of segments of the heating resistance wire A plurality of said heating zones are formed. like image 3 As shown, the heating resistance wire includes a first segment resistance wire 21a, a second segment resistance wire 21b, a third segment resistance wire 21c, the first segment resistance wire 21a forms the first heating zone 201, and the second segment resistance wire 21a The segmented resistance wire 21 b forms the second heating zone 202 , and the third segmented resistance wire 21 c forms the third heating zone 203 . The heating ...

Embodiment 3

[0066] Image 6 It is a flow chart of the preparation method of the multi-parameter gas sensing microchip provided in the third embodiment of the present invention. refer to figure 1 and Image 6 , the preparation method of the multi-parameter gas sensing microchip provided in this embodiment comprises the following steps:

[0067]S1) Provide a silicon-based substrate 10 .

[0068] The silicon-based substrate 10 adopts an SOI wafer layer having p-type boron-doped silicon (Si), and the SOI (Silicon-On-Insulator, i.e., silicon on an insulating substrate) silicon wafer refers to the silicon wafer between the top layer silicon and the back substrate. A buried oxide layer (BOX) is introduced as a supporting layer 11, and a silicon oxide or silicon nitride thin film layer 12 with a thickness not greater than 1 μm is coated on the front and back of the silicon wafer by plasma enhanced chemical vapor deposition.

[0069] S2) Fabricate a heating layer 20 having multiple heating reg...

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Abstract

The invention relates to the technical field of gas sensors, and discloses a multi-parameter gas sensing microchip and a preparation method thereof. The microchip comprises a micro heating structure and a sensing structure, the micro heating structure comprises a silicon-based substrate and a heating layer arranged on the silicon-based substrate, and the heating layer is divided into a plurality of heating areas with different temperatures; and the sensing structure comprises a plurality of measuring electrodes and gas sensitive films coated on the measuring electrodes, the plurality of measuring electrodes are respectively arranged in the corresponding heating areas, and the gas sensitive films coated on the plurality of measuring electrodes are made of different materials. According to the invention, corresponding heating temperatures are provided for various gas sensitive films through a plurality of heating areas of the micro-heating structure, so that a gas detection function of multiple parameters (different sensing materials and different temperatures) is realized, that is, detection is carried out at different temperatures by combining various sensing materials on a single microchip, a complex atmosphere detection function is realized, the size is reduced, the power consumption is reduced, and the integration level is improved.

Description

technical field [0001] The invention relates to the technical field of gas sensors, in particular to a multi-parameter gas sensing microchip, a preparation method of a multi-parameter gas sensing microchip and a gas sensor. Background technique [0002] There are various means of gas sensing detection. Among them, the gas sensor based on metal oxide semiconductor sensing principle has the advantages of small size, low energy consumption, short response time, and high detection accuracy, and has been widely used. The principle of the semiconductor gas sensor is to realize the detection function by converting the gas composition, concentration and other parameters into the resistance change, and then into the output signal of current and voltage. Specifically, metal-oxide-semiconductor (Metal-Oxide-Semiconductor, MOS), a gas-sensing resistor material, is made of impurity defects that deviate from the stoichiometric ratio, and certain noble metals will be doped or loaded when s...

Claims

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Application Information

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IPC IPC(8): B81B7/02B81C1/00
CPCB81B7/02B81C1/00134B81C1/00206B81B2201/02B81B2201/0292
Inventor 李娜杨哲安飞孙冰张树才姜慧芸朱红伟
Owner CHINA PETROLEUM & CHEM CORP
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