PIM device and manufacturing method thereof

Abstract

The invention relates to the technical field of semiconductor devices, in particular to a PIM device and a manufacturing method thereof, and the PIM device comprises a copper-clad ceramic substrate, and a three-phase rectification unit, a three-phase inversion unit, a braking unit and a temperature control detection NTC device which are arranged on the copper-clad ceramic substrate; the three-phase rectification unit comprises six diode chips arranged on the copper-clad ceramic substrate and clip copper sheets corresponding to the six diode chips one by one; the three-phase inversion unit comprises six IGBT chips, six clip emitter copper sheets in one-to-one correspondence with the six IGBT chips, and six clip control electrode copper sheets in one-to-one correspondence with the six IGBT chips. The braking unit comprises a diode chip VII, an IGBT chip VII, a clip copper sheet, a clip emitter copper sheet and a clip control electrode copper sheet. According to the technical scheme, the PIM device is small and exquisite in structure and convenient to use, when the PIM device is applied to a related circuit, the circuit structure can be simplified, the PIM device is stable in performance based on the clip technology adopted by the PIM device, and the circuit using the PIM device is further safe and reliable.

Description

technical field [0001] The invention relates to the technical field of semiconductor devices, in particular to a PIM device and a manufacturing method thereof. Background technique [0002] PIM circuit is a functional circuit that integrates rectifier circuit, inverter circuit, brake circuit and temperature control switch. ) connected, the circuit is large in size and complex in structure, prone to failure and difficult to maintain. Therefore, the IGBT power integrated module PIM (PowerIntergrated Mondule) has gradually replaced the traditional PIM circuit. The distributed inductance, and the PIM module simplifies the installation process and facilitates maintenance. At present, 25A / 40A / 50A / 75A PIM modules are mostly used in the market for low-power frequency conversion lines below 15kW, which are mainly used in frequency converters, servo motors, frequency conversion household appliances, medical systems and other fields. With the rapid development of the frequency conver...

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Problems solved by technology

[0003] 1. In the hardware structure of the internal circuit of the PIM device, the aluminum wire process is generally used. Due to the high power of the IGBT chip application, the current density of the aluminum wire process is low, the conduction capacity is poor, the resistance value is high, and the welding area is prone to high volume, resulting in The lower safety performance of PIM devices increases the incidence of circuit failures;

[0004] 2. Based on the low safety performance, the life of the PIM device is short, which is manifested in the thermal fatigue life is easy to fail;

[0005] 3. The difficulty of the process is high, resulting in slow production efficiency and low product qualification rate. The specific performance is that the surface of the device must be free of oxidation, otherwise it will fail due to poor contact. The adjustable range of the ultrasonic welding machine used in the aluminum wire process is narrow, and the bonding depth is too shallow and easy to fall off , if the depth is too deep, it is easy to damage the internal oxide layer, resulting in device failure

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