Group III nitride semiconductor integrated circuit structure, manufacturing method and application thereof

Abstract

The invention provides a group III nitride semiconductor integrated circuit structure, a manufacturing method and application thereof. The integrated circuit structure is a complementary circuit based on an HEMT and an HHMT of a group III nitride semiconductor, integration of the HEMT and the HHMT can be achieved on the same substrate, the HEMT and the HHMT are respectively provided with polarization junctions of a vertical interface, the crystal orientations of the polarization junctions of the HEMT and the HHMT are different, two-dimensional carrier gas forms a carrier channel in the direction parallel to the polarization junctions, and almost depleting the corresponding channel carriers by means of the buried doped region. Compared with a traditional silicon-based CMOS, the integrated circuit structure has the advantages in the aspects of carrier mobility, conduction current density, switching speed and the like, low conduction resistance, low parasitic inductance and a normally-off state of a device can be achieved, and the technical effects of higher conduction current density, higher integration level and small energy consumption can be achieved.

Description

technical field

[0001] The present disclosure relates to the field of semiconductor integrated circuits, and more specifically, to a structure, manufacturing method and application of a Group III nitride semiconductor integrated circuit. Background technique

[0002] Wide bandgap semiconductor materials such as Group III nitride semiconductors have become a research hotspot in the semiconductor industry due to their high critical breakdown electric field, high electron saturation rate, high thermal conductivity, and strong radiation resistance. In recent years, III-nitride semiconductors and devices have shown great success in the fields of radio frequency / microwave, mobile communication and semiconductor lighting, and power integrated circuit design. Although III-nitride semiconductor discrete devices exhibit unprecedented switching speed and operating frequency, in actual circuit applications, the parasitic inductance between chips will severely limit the switching speed o...

Examples

Embodiment Construction

[0104] Exemplary disclosures of the present disclosure will be described below with reference to the accompanying drawings. In the interest of clarity and conciseness, not all features that implement the disclosure are described in the specification. Here, it should also be noted that, in order to avoid obscuring the present disclosure due to unnecessary details, only the device structures closely related to the solutions according to the present disclosure are shown in the drawings, while omitting the structure related to the present disclosure. Other details that are not relevant to the content. In the drawings, like reference numerals indicate corresponding parts throughout the different drawings. Meanwhile, in the description of the present disclosure, the terms "first", "second" and the like are only used to distinguish descriptions, and cannot be understood as indicating or implying relative importance, nor implying sequence or order.

[0105] It is to be understood th...

technical field

[0001] The present disclosure relates to the field of semiconductor integrated circuits, and more specifically, to a structure, manufacturing method and application of a Group III nitride semiconductor integrated circuit. Background technique

[0002] Wide bandgap semiconductor materials such as Group III nitride semiconductors have become a research hotspot in the semiconductor industry due to their high critical breakdown electric field, high electron saturation rate, high thermal conductivity, and strong radiation resistance. In recent years, III-nitride semiconductors and devices have shown great success in the fields of radio frequency / microwave, mobile communication and semiconductor lighting, and power integrated circuit design. Although III-nitride semiconductor discrete devices exhibit unprecedented switching speed and operating frequency, in actual circuit applications, the parasitic inductance between chips will severely limit the switching speed o...

Examples

Embodiment Construction

[0104] Exemplary disclosures of the present disclosure will be described below with reference to the accompanying drawings. In the interest of clarity and conciseness, not all features that implement the disclosure are described in the specification. Here, it should also be noted that, in order to avoid obscuring the present disclosure due to unnecessary details, only the device structures closely related to the solutions according to the present disclosure are shown in the drawings, while omitting the structure related to the present disclosure. Other details that are not relevant to the content. In the drawings, like reference numerals indicate corresponding parts throughout the different drawings. Meanwhile, in the description of the present disclosure, the terms "first", "second" and the like are only used to distinguish descriptions, and cannot be understood as indicating or implying relative importance, nor implying sequence or order.

[0105] It is to be understood th...

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