Group III nitride semiconductor integrated circuit structure, manufacturing method and application thereof
A nitride semiconductor and integrated circuit technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, circuits, etc., can solve the problems of less research on P-type AlGaN/GaN structure and difficult P-type doping, and achieve low parasitic inductance , the effect of low on-resistance and high on-current density
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[0104] Exemplary disclosures of the present disclosure will be described below with reference to the accompanying drawings. In the interest of clarity and conciseness, not all features that implement the disclosure are described in the specification. Here, it should also be noted that, in order to avoid obscuring the present disclosure due to unnecessary details, only the device structures closely related to the solutions according to the present disclosure are shown in the drawings, while omitting the structure related to the present disclosure. Other details that are not relevant to the content. In the drawings, like reference numerals indicate corresponding parts throughout the different drawings. Meanwhile, in the description of the present disclosure, the terms "first", "second" and the like are only used to distinguish descriptions, and cannot be understood as indicating or implying relative importance, nor implying sequence or order.
[0105] It is to be understood th...
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